Influence of silicon carbide interlayer evolution on diamond heteroepitaxy during bias enhanced nucleation on silicon substrates

Sarrieu, Cyril; Bauer‐Grosse, E.; Barrat, S.

doi:10.1016/j.diamond.2011.07.006

Cited by 5 publications

(3 citation statements)

References 10 publications

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“…It has been reported that nanocrystalline -SiC, which is formed by the redeposition of Si etched from the surface of a Si substrate during BEN, serves as a seed in diamond nucleation. [3][4][5][6] We suppose that the direct attachment of Si atoms to the Si surface contributes to the nucleation enhancement as a nucleation center under such a severe condition. Moreover, the size of diamond nuclei seems to decrease with increasing nucleation density owing to the MMS microaddition.…”

Section: Experimental Methodsmentioning

confidence: 99%

“…On the other hand, it has been reported that nanocrystalline -SiC, which is formed by the redeposition of Si etched from the surface of the Si substrate during BEN, serves as a seed in diamond nucleation and has a distinct texture parallel to the heteroepitaxial orientation. [3][4][5][6] We have expected that atomic silicon can provide a stable sp 3 bond and consequently increase the cohesive energy.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Enhancement of Diamond Nucleation by Atomic Silicon Microaddition

Isshiki¹,

Yoshida²,

Tobita³

et al. 2012

Jpn. J. Appl. Phys.

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The enhancement of diamond nucleation by atomic silicon microaddition is demonstrated. From the observation by surface-enhanced Raman scattering (SERS), the mechanism of bias-enhanced nucleation (BEN) with atomic silicon microaddition is discussed. We propose two nucleation processes, namely, i) generation in condensed amorphous carbon (a-C) and ii) carbon cohesion with the adsorbed silicon atom as the core. It is shown that the nucleation process ii) induces highly oriented diamond growth on Si substrates. #

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Section: Experimental Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Enhancement of Diamond Nucleation by Atomic Silicon Microaddition

Isshiki¹,

Yoshida²,

Tobita³

et al. 2012

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

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“…Meanwhile, the high deposition temperature also results in interface coarsening on the film/substrate interface and high heat stress in the interlayer, both of which result in the formation of high density of micro-voids and lattice defects [18,19]. As a result, the performance of β-SiC interlayer is perniciously affected and the application of diamond film on cemented carbide tools is limited [20]. Low-temperature processes for deposition of β-SiC interlayers would avoid the deterioration of mechanical properties of diamond-coated cemented carbide tools.…”

Section: Introductionmentioning

confidence: 99%

Low-temperature β-SiC interlayer for diamond film on cemented carbide

Ren

Liu

et al. 2019

Surface Engineering

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The adhesion of protective diamond films to cemented carbide substrates used in fabrication of space drilling tools can be improved by the inclusion of β-SiC interlayers. Conventional CVD methods for depositing the SiC interlayers lead to interface coarsening and heat stress resulting from high temperatures of deposition. In this work, a mid-frequency magnetron sputtering technique is used to deposit the β-SiC interlayer at lower temperatures, and the effects of deposition temperature on the microstructure and properties of the interlayer and final diamond film are assessed. The results show that the β-SiC interlayers deposited at temperatures exceeding 300°C possess high compactness and crystallinity. Increasing crystal β-SiC phase has beneficial effects on the nucleation and growth of diamond film. Based on the experimental data, a six-step reaction model is proposed to show the mechanism by which the β-SiC interlayer promotes the nucleation and growth of diamond films.

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