2011
DOI: 10.1016/j.diamond.2011.07.006
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Influence of silicon carbide interlayer evolution on diamond heteroepitaxy during bias enhanced nucleation on silicon substrates

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Cited by 5 publications
(3 citation statements)
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“…It has been reported that nanocrystalline -SiC, which is formed by the redeposition of Si etched from the surface of a Si substrate during BEN, serves as a seed in diamond nucleation. [3][4][5][6] We suppose that the direct attachment of Si atoms to the Si surface contributes to the nucleation enhancement as a nucleation center under such a severe condition. Moreover, the size of diamond nuclei seems to decrease with increasing nucleation density owing to the MMS microaddition.…”
Section: Experimental Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…It has been reported that nanocrystalline -SiC, which is formed by the redeposition of Si etched from the surface of a Si substrate during BEN, serves as a seed in diamond nucleation. [3][4][5][6] We suppose that the direct attachment of Si atoms to the Si surface contributes to the nucleation enhancement as a nucleation center under such a severe condition. Moreover, the size of diamond nuclei seems to decrease with increasing nucleation density owing to the MMS microaddition.…”
Section: Experimental Methodsmentioning
confidence: 99%
“…On the other hand, it has been reported that nanocrystalline -SiC, which is formed by the redeposition of Si etched from the surface of the Si substrate during BEN, serves as a seed in diamond nucleation and has a distinct texture parallel to the heteroepitaxial orientation. [3][4][5][6] We have expected that atomic silicon can provide a stable sp 3 bond and consequently increase the cohesive energy.…”
Section: Introductionmentioning
confidence: 99%
“…Meanwhile, the high deposition temperature also results in interface coarsening on the film/substrate interface and high heat stress in the interlayer, both of which result in the formation of high density of micro-voids and lattice defects [18,19]. As a result, the performance of β-SiC interlayer is perniciously affected and the application of diamond film on cemented carbide tools is limited [20]. Low-temperature processes for deposition of β-SiC interlayers would avoid the deterioration of mechanical properties of diamond-coated cemented carbide tools.…”
Section: Introductionmentioning
confidence: 99%