Quantitative scanning capacitance microscopy analysis of two-dimensional dopant concentrations at nanoscale dimensions

Erickson, A.; Sadwick, L.P.; Neubauer, G.; Kopanski, Joseph J.; Adderton, D.; Rogers, Michael

doi:10.1007/bf02666260

Cited by 38 publications

(14 citation statements)

References 3 publications

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“…The SCM used in this study is similar to the one described previously [12][13][14][15][16][17]. Briefly, a contact-mode AFM, with the beam deflection method, was used.…”

Section: Methodsmentioning

confidence: 99%

“…The SCM was able to detect the small variations in capacitance even at highly doped regions by sensing the depletion modulation [12]. The carrier density profile at one point and the two-dimensional (2D) map at a fixed bias were measured, showing good agreement with SIMS results within the dopant range of 10 17 -10 20 cm −3 [13][14][15][16][17]. The dopant profile can be estimated by comparing the measured C-V dependence with the SIMS result.…”

mentioning

confidence: 97%

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Recombination dynamics of traps in SiO 2 layer on Si by scanning capacitance microscopy

Kang

Kim

Kuk

et al. 1998

Applied Physics A: Materials Science & Processing

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The depth-dependent carrier density and trapped charges in an arsenic-implanted silicon sample were measured by using scanning capacitance microscopy (SCM). The position-dependent capacitance versus voltage scans were measured at various dc bias voltages. A strong dc bias dependence was observed at the interface of an abrupt junction between n + and p. The bias-dependent SCM images were used to follow the recombination dynamics of traps. The results show good agreement with quasi-three-dimensional simulations, suggesting that they can be used to map device structure.With the recent developments in silicon submicrometer technology, the characterization of the three-dimensional carrier density profile in a device has become one of the most important issues. In a sub-micron device, it is very difficult to directly measure the carrier density profile around the gate because many tools measure only the profile averaged over a large area. Secondary ion mass spectrometry (SIMS) and spreading resistance profilometry (SRP) have widely been used to measure dopant profiles. The tomographic approach [1] and the angle lapping technique [2] have been developed to measure two-dimensional profiles with improved resolution. Recently, nano-SRP, utilizing scanning probe microscopy, has further improved spatial resolution [3][4][5]. Other important problems in submicron MOS devices are device failure and noise from hot electron effects and trapped charges. If the gate oxide in a MOS device becomes thinner than 10 nm and 5 V is still applied to the gate, problems related to the hot electron effect and trapped charges become more serious. At present there is no tool to measure the local defects such as trapped charges and the defects created by hot electrons. When data is taken by macroscopic measuring tools and then compared with the simulated results poor agreement is found.Since the advent of the scanning tunneling microscope (STM) and the atomic force microscope (AFM), geometrical and electrical measurements of a semiconductor surface have become possible with atomic resolution. As a probe is scanned over a specific area, the carrier density profile [6], the potential across abrupt junctions [7], the impurity distribution [8], and the carrier scattering near defect centers [9] can be measured at the same time. The carrier density of a semiconductor can be mapped by the capacitance-voltage (C-V ) dependence, and the geometrical structure can be measured by STM or AFM. In order to have good spatial resolution, the sensitivity of the detector has to be better than 10 −19 F [10]. This can be achieved with the scanning capacitance microscope (SCM) operating under ambient conditions by using a sample with only a capping oxide and without any further extensive sample preparation. However, it only measures the carrier density rather than the dopant concentration of the semiconductor surface. If the dopant density does not vary abruptly within a few Debye lengths, it can be estimated from the measured C-V dependence [11]. In an earlier SCM...

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“…The SCM used in this study is similar to the one described previously [12][13][14][15][16][17]. Briefly, a contact-mode AFM, with the beam deflection method, was used.…”

Section: Methodsmentioning

confidence: 99%

mentioning

confidence: 97%

Recombination dynamics of traps in SiO 2 layer on Si by scanning capacitance microscopy

Kang

Kim

Kuk

et al. 1998

Applied Physics A: Materials Science & Processing

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show abstract

“…For example, in measurements of the carrier density the usual methods are to detect the ratio of the linear and the second-order nonlinear capacitances. [40][41][42][43][44][45] In mesoscopic measurements the charge response at one contact to the voltage at an other contact is determined by the emittance. The second-order emittance is 43…”

Section: ͑10͒mentioning

confidence: 99%

Transmission,S-matrix, and partial densities of states for ac transport through a resonant cavity with multileads

et al. 2002

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We investigate the principal properties of ac transport through a resonant cavity with multileads. In terms of Green's function and the coupling strengths of the system, a set of general expressions for the partial densities of states ͑PDOS͒ can be derived in an unambiguous way. In particular we derive the PDOS with a reflection property. All the PDOS's are in an explicit and compact form. Based upon these PDOS's, the ac conductance can be calculated to a first-order frequency-dependent term. As an extension, we introduce the second-order nonlinear PDOS; then the ac conductance can be generalized to include the second-order contribution. As an example, we apply these formulas to evaluate the linear emittance and the second-order nonlinear emittance in a simplified structure. Some interesting results are obtained.

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“…SCM incorporates a metallized probe and a capacitance sensor [3] into an AFM to perform the experiment. Basically, the metallized probe tip in contact with an oxidized semiconductor forms a metal-oxidesemiconductor (MOS) structure, which has a two series capacitors, one with the native oxide and the other with the silicon dielectric.…”

Section: Theorymentioning

confidence: 99%

“…Such techniques include scanning electron microscopy analysis of preferentially etched cross-sections which only provides qualitative information, transmission electron microscopy analysis of samples with differential etching which is very time consuming in sample preparation and etc. One promising technique that has been developed recently to overcome most of the short-comings just mentioned is Scanning Capacitance Microscopy (SCM) [3,4,5].…”

Section: Introductionmentioning

confidence: 99%

Scanning capacitance microscopy analysis of dram trench capacitors

Pey

Strausser²,

Erickson³

et al.

IEEE International Workshop on Memory Technology, Design and Testing,

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Two dimensional dopant concentrations of the side walls of trench capacitor cells of dynamic random access memory devices were profiled using the scanning capacitance microscopy technique. This technique permits the first direct study and semi-quantification of the dopant profiles in the silicon substrate as a function of trench depth. The SCM results indicate that for a fmed trench depth, the dopant profiles in any radial direction of the trench are consistent. However, difference in dopant distribution is clearly revealed between areas that are very close to the top of the trench and those situated deep in the silicon substrate. Variation in the SCM signal at the n+ doped bit-line contacts of the transfer gate transistor is attributed to possibly dopant redistribution during contact formation process.

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Quantitative scanning capacitance microscopy analysis of two-dimensional dopant concentrations at nanoscale dimensions

Cited by 38 publications

References 3 publications

Recombination dynamics of traps in SiO 2 layer on Si by scanning capacitance microscopy

Recombination dynamics of traps in SiO 2 layer on Si by scanning capacitance microscopy

Transmission,S-matrix, and partial densities of states for ac transport through a resonant cavity with multileads

Scanning capacitance microscopy analysis of dram trench capacitors

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