1975 International Electron Devices Meeting 1975
DOI: 10.1109/iedm.1975.188838
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Quantitative determination of surface potentials on integrated circuits (IC) at high frequencies with the scanning electron microscope (SEM)

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(4 citation statements)
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“…This disadvantage of the retarding field method has been overcome by the installation of a feedback loop (Fleming & Ward, 1970;Gopinath & Sanger, 1971b;Balk et al, 1976;Feuerbaum, 1979) which keeps the current I constant by varying the retarding field voltage VG. The necessary variation of VG is equal to the applied specimen voltage V,, and thus provides a direct measure of Vsp.…”
Section: (C)mentioning
confidence: 99%
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“…This disadvantage of the retarding field method has been overcome by the installation of a feedback loop (Fleming & Ward, 1970;Gopinath & Sanger, 1971b;Balk et al, 1976;Feuerbaum, 1979) which keeps the current I constant by varying the retarding field voltage VG. The necessary variation of VG is equal to the applied specimen voltage V,, and thus provides a direct measure of Vsp.…”
Section: (C)mentioning
confidence: 99%
“…A reduction of the influence~of'these local fields on the SE spectrum can be realized by installation of strong extraction fields above the specimen (Plows, 1969;Hannah, 1974;Balk et al, 1976;Dyukov et al, 1978;Feuerbaum, 1979;Menzel, 1981;Ura et al, 1980;Fujioka et al, 1981) either by placing a planar grid at high positive potential (Plows, 1969;Feuerbaum, 1979), or an immersion objective close to the specimen surface (Hannah, 1974;Balk et al, 1976). It was shown (Feuerbaum, 1979;Menzel, 1981;Ura et al, 1980;Fujioka et al, 1981) that with increasing extraction field strength the barrier above positively biased IC lines decreases and vanishes at certain field strengths that depend on the device geometry and the voltage applied to the IC lines.…”
Section: Suppression Of Local Electrkal Fieldsmentioning
confidence: 99%
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