1989
DOI: 10.1007/bf00572315
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Quantitative Auger depth profiling of LPCVD and PECVD silicon nitride films

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1990
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Cited by 5 publications
(5 citation statements)
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“…At low gas flow the leakage current density is in the order of magnitude from the equipment resolution and increases then exponentially with the reactant gas flow. For a total gas flow larger than 133 sccm, increasing the gas ratio increases also the leakage current density, probably by increasing the silicon fraction of the PECVD nitride as the silane proportion in the feed gas increases [8]. The breakdown voltage is maximal for a gas flow of 133 sccm and insensitive to the gas ratio for gas flow ranging from 100 sccm to 133 sccm.…”
Section: Electrical Resultsmentioning
confidence: 96%
“…At low gas flow the leakage current density is in the order of magnitude from the equipment resolution and increases then exponentially with the reactant gas flow. For a total gas flow larger than 133 sccm, increasing the gas ratio increases also the leakage current density, probably by increasing the silicon fraction of the PECVD nitride as the silane proportion in the feed gas increases [8]. The breakdown voltage is maximal for a gas flow of 133 sccm and insensitive to the gas ratio for gas flow ranging from 100 sccm to 133 sccm.…”
Section: Electrical Resultsmentioning
confidence: 96%
“…Table II summarizes It has been argued that the high energy Si KLL Auger peak is a better probe than the stronger and easily obtainable Si LVV Auger peak, since the line shape of Si KLL Auger peak is less influenced by the surface chemistry. 23 Traditionally, many authors have used the Auger p-p ratio of Si LVV /N KLL as an indicator of SiN composition. [23][24][25][26] The detailed quantitative Auger depth profiling study of LPCVD and PECVD SiN films concluded that the p-p heights of the Si KLL and N KLL Auger transition in d N (E)/d E of the energy distribution is a reasonable indicator to determine SiN composition in Auger depth profiles over a wide range of atomic Si/N ratio.…”
Section: Resultsmentioning
confidence: 99%
“…23 Traditionally, many authors have used the Auger p-p ratio of Si LVV /N KLL as an indicator of SiN composition. [23][24][25][26] The detailed quantitative Auger depth profiling study of LPCVD and PECVD SiN films concluded that the p-p heights of the Si KLL and N KLL Auger transition in d N (E)/d E of the energy distribution is a reasonable indicator to determine SiN composition in Auger depth profiles over a wide range of atomic Si/N ratio. 23 It is generally agreed that the AES generally has excellent spatial resolution (15 nm), reasonable detection limit (<0.5 at%), good quantification with standards, and excellent speed.…”
Section: Resultsmentioning
confidence: 99%
“…The film composition was determined from the ratio of the peak-to-peak heights in the dN(E)/dE mode for two combinations of transitions, viz., the Si-LVV and N-KLL transitions, and the Si-KLL and N-KLL transitions. According to Keim and Aite, 15 the former of the two ratios is a better probe of the chemical composition.…”
mentioning
confidence: 99%