1996
DOI: 10.1116/1.580239
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LPCVD silicon-rich silicon nitride films for applications in micromechanics, studied with statistical experimental design*

Abstract: A systematic investigation of the influence of the process parameters temperature, pressure, total gas flow, and SiH 2 Cl 2 :NH 3 gas flow ratio on the residual stress, the refractive index, and its nonuniformity across a wafer, the growth rate, the film thickness nonuniformity across a wafer, and the Si/N incorporation ratio of low pressure chemical vapor deposition Si x N y films has been performed. As a tool for complete characterization of the property-deposition parameter relations, a full factorial exper… Show more

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Cited by 143 publications
(89 citation statements)
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“…In these calculations the data for the 200μm diameter membrane is omitted. Although they can change considerably with the method of deposition and during different process steps, the values found here are comparable to values of 100 to 300GPa for the young's modulus and -50 to 170MPa for the initial stress found in literature [105,106,107]. The data for the square membranes is also fitted to equation (2.33) and the values found for c and d are shown in table 5.3.…”
Section: Different Membrane Sizesmentioning
confidence: 73%
“…In these calculations the data for the 200μm diameter membrane is omitted. Although they can change considerably with the method of deposition and during different process steps, the values found here are comparable to values of 100 to 300GPa for the young's modulus and -50 to 170MPa for the initial stress found in literature [105,106,107]. The data for the square membranes is also fitted to equation (2.33) and the values found for c and d are shown in table 5.3.…”
Section: Different Membrane Sizesmentioning
confidence: 73%
“…The same deposition parameters are used as during the first layer to deposit a layer of 1.5 μm. Here the LPCVD SiRN is used because of its chemical inertness, high strength, stability and good thermal properties (Williams and Muller 1996;Gardeniers et al 1996;French et al 1997;Freitag and Richerson 1998;Williams et al 2003;Kaushik et al 2005). In addition, it is biocompatible (Mazzocchi and Bellosi 2008), its surface can be functionalized (Parvais et al 2003;Arafat et al 2004) and the stress in SiRN can be tuned by the deposition parameters (Gardeniers et al 1996;Habermehl 1998) which allows relatively thick layers.…”
Section: Fabrication Outline When Using Standard Silicon Wafersmentioning
confidence: 99%
“…Using a mixture of 77.5 sccm SiH 2 Cl 2 and 20 sccm NH 2 at 850 • C, this results in a layer with a tensile stress between 50 and 100 MPa deposited at about 4 nm min −1 . Gardeniers et al (1996) A 50 nm thick layer of chromium is sputtered at the front side of the wafer. This layer will be used as a hard mask during the channel etch to protect the SiRN.…”
Section: Fabrication Outline When Using Standard Silicon Wafersmentioning
confidence: 99%
“…To support as many applications as possible, there should only be one wetted material in our platform and that material should be chemically inert to many types of fluid. Silicon-nitride (Si 3 N 4 ) and silicon-rich silicon nitride (SiRN, Si x N y ) are known for their high strength, chemical inertness, stability and good thermal properties (Williams and Muller 1996;Gardeniers et al 1996;French et al 1997;Freitag and Richerson 1998;Williams et al 2003;Kaushik et al 2005) and can be grown with a conformal step coverage using LPCVD. In addition, it is biocompatible (Mazzocchi and Bellosi 2008), its surface can be functionalized (Parvais et al 2003;Arafat et al 2004), and the stress in SiRN can be tuned by the deposition parameters Habermehl 1998).…”
Section: Channel Materialsmentioning
confidence: 99%