The design, fabrication and experimental results of lateral-comb-drive actuators for large displacements at low driving voltages is presented. A comparison of several suspension designs is given, and the lateral large deflection behaviour of clamped - clamped beams and a folded flexure design is modelled. An expression for the axial spring constant of folded flexure designs including bending effects from lateral displacements, which reduce the axial stiffness, is also derived. The maximum deflection that can be obtained by comb-drive actuators is bounded by electromechanical side instability. Expressions for the side-instability voltage and the resulting displacement at side instability are given. The electromechanical behaviour around the resonance frequency is described by an equivalent electric circuit. Devices are fabricated by polysilicon surface micromachining techniques using a one-mask fabrication process. Static and dynamic properties are determined experimentally and are compared with theory. Static properties are determined by displacement-to-voltage, capacitance-to-voltage and pull-in voltage measurements. Using a one-port approach, dynamic properties are extracted from measured admittance plots. Typical actuator characteristics are deflections of about at driving voltages around 20 V, a resonance frequency around 1.6 kHz and a quality factor of approximately 3.

This paper presents guidelines for the deep reactive ion etching (DRIE) of silicon MEMS structures, employing SF 6 O 2 -based high-density plasmas at cryogenic temperatures. Procedures of how to tune the equipment for optimal results with respect to etch rate and profile control are described. Profile control is a delicate balance between the respective etching and deposition rates of a SiO F passivation layer on the sidewalls and bottom of an etched structure in relation to the silicon removal rate from unpassivated areas. Any parameter that affects the relative rates of these processes has an effect on profile control. The deposition of the SiO F layer is mainly determined by the oxygen content in the SF 6 gas flow and the electrode temperature. Removal of the SiO F layer is mainly determined by the kinetic energy (self-bias) of ions in the SF 6 O 2 plasma. Diagrams for profile control are given as a function of parameter settings, employing the previously published "black silicon method". Parameter settings for high rate silicon bulk etching, and the etching of micro needles and micro moulds are discussed, which demonstrate the usefulness of the diagrams for optimal design of etched features. Furthermore it is demonstrated that in order to use the oxygen flow as a control parameter for cryogenic DRIE, it is necessary to avoid or at least restrict the presence of fused silica as a dome material, because this material may release oxygen due to corrosion during operation of the plasma source. When inert dome materials like alumina are used, etching recipes can be defined for a broad variety of microstructures in the cryogenic temperature regime. Recipes with relatively low oxygen content (1-10% of the total gas volume) and ions with low kinetic energy can now be applied to observe a low lateral etch rate beneath the mask, and a high selectivity (more than 500) of silicon etching with respect to polymers and oxide mask materials is obtained. Crystallographic preference etching of silicon is observed at low wafer temperature ( 120 C). This effect is enhanced by increasing the process pressure above 10 mtorr or for low ion energies (below 20 eV).[720]Index Terms-Cryogenic etching, profile control, reactive ion etching (RIE).

Osmotic shrinkage of giant egg-lecithin vesicles was observed by phase-contrast microscopy. The vesicles remained or became spherical when shrinking. Small and thick-walled vesicles formed visible fingers attached to the sphere. The water permeability of the single bilayer was found to be 41 micrometers/s. A variety of observations indicate that osmosis induces a parallel lipid flow between the monolayers of the bilayer, leading to a strong positive spontaneous curvature. They also suggest the formation of mostly submicroscopic daughter vesicles. The estimated coupling constant, 2 . 10(-6) mol/mol, is large enough to be biologically significant.

We have developed a procedure for accurate fabrication of silicon-based nanochannels down to a few nanometer channel height, based on the use of a thin thermal silicon oxide spacer layer. Nanochannels with a predictable and carefully measured height between 5 and 50nm were successfully fabricated and filled with de-ionized water. For all channel heights the filling kinetics behaves according to the classical Washburn law for capillary filling, with a small correction for a loss of liquid at the moving front at a constant rate and a smaller than expected Washburn coefficient (up to a factor of 1.6 smaller for water in 5nm channels).

No abstract