Quadruple Cross-Coupled Latch-Based 10T and 12T SRAM Bit-Cell Designs for Highly Reliable Terrestrial Applications

Jiang, Jianwei; Xu, Yiran; Zhu, Wenyi; Jun, Xiao; Zou, Shichang

doi:10.1109/tcsi.2018.2872507

Cited by 118 publications

(105 citation statements)

References 24 publications

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“…The schematic of the QUCCE10T cell [21] is shown in FIGURE 2-(e). The QUCCE10T cell has four storage nodes A, Q, QN, and B.…”

Section: Previous Hardened Memory Cellsmentioning

confidence: 99%

“…The schematic of the QUCCE12T cell [21] is shown in FIGURE 2-(f). It can be seen that the QUCCE12T cell uses two extra access transistors with respect to the QUCCE10T cell to improve performance.…”

Section: Previous Hardened Memory Cellsmentioning

confidence: 99%

“…Since the 6T cell cannot tolerate SEUs, many radiation hardened memory cells have been proposed to improve robustness. Typical SEU and/or even DNU hardened cells include NASA13T [17], Lin12T [18], RHD12T [19], RH12T [20], QUCCE10T [21], and QUCCE12T [21]. However, these memory cells still have the following problems.…”

Section: Introductionmentioning

confidence: 99%

“…(1) Most of the existing memory cells suffer from a large silicon area and power dissipation, such as NASA13T [17], Lin12T [18], and RH12T [20]. Moreover, some cells suffer from a large read and write access time, such as NASA13T [17] and QUCCE10T [21].…”

Section: Introductionmentioning

confidence: 99%

“…(2) Most of the existing memory cells have not been effectively hardened, since one or more nodes cannot tolerate SEUs, such as NASA13T [17]. Moreover, some memory cells cannot tolerate DNUs, such as Lin12T [18], RHD12T [19], RH12T [20], QUCCE10T [21], and QUCCE12T [21].…”

Section: Introductionmentioning

confidence: 99%

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Novel Quadruple Cross-Coupled Memory Cell Designs With Protection Against Single Event Upsets and Double-Node Upsets

Yan

Zhou

et al. 2019

IEEE Access

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This paper presents two novel quadruple cross-coupled memory cell designs, namely QCCM10T and QCCM12T, with protection against single event upsets (SEUs) and double-node upsets (DNUs). First, the QCCM10T cell consisting of four cross-coupled input-split inverters is proposed. The cell achieves full SEU tolerance and partial DNU tolerance through a novel feedback mechanism among its internal nodes. It also has a low cost in terms of area and power dissipation mainly due to the use of only a few transistors. Next, based on the QCCM10T cell, the QCCM12T cell is proposed that uses two extra access transistors. The QCCM12T cell has a reduced read-and-write access time with the same soft error tolerance when compared to the QCCM10T cell. Simulation results demonstrate the robustness of the proposed memory cells. Moreover, compared with the state-of-the-art hardened memory cells, the proposed QCCM12T cell saves 28.59% write access time, 55.83% read access time, and 4.46% power dissipation at the cost of 4.04% silicon area on average.

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“…The schematic of the QUCCE10T cell [21] is shown in FIGURE 2-(e). The QUCCE10T cell has four storage nodes A, Q, QN, and B.…”

Section: Previous Hardened Memory Cellsmentioning

confidence: 99%

Section: Previous Hardened Memory Cellsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Novel Quadruple Cross-Coupled Memory Cell Designs With Protection Against Single Event Upsets and Double-Node Upsets

Yan

Zhou

et al. 2019

IEEE Access

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Radiation Effects and Their Impact on SRAM Design

Alekhya,

Nanda,

Pandey

2023

Advanced Ultra Low‐Power Semiconductor Devices

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Radiation‐Tolerant Electronic Devices Using Wide Bandgap Semiconductors

Muhammad

Wang

Zhang

et al. 2022

Adv Materials Technologies

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These energetic particles, such as electrons, protons, neutrons, X-rays, or gamma rays, induced damage in materials (used in electronic devices) through total ionization and displacement, [4] which would affect the reliability of the electronic devices. [5][6][7] Electronics failure occurs in harsh and inaccessible environments through various paths, such as electromagnetic waves, nuclear reactions, and high-frequency communications systems. Therefore, the radiationhardened requirements of the deployed electronic technology depend on the specific high-energy photons and particles in the radiation environment. For example, Mars exploration requires a special proton anti-radiation in electronics. At the same time, the safety supervision and inspection of the contaminated nuclear area are suggested to be equipped with high resilience towards the alpha, beta, and gamma rays. The development of radiation-hard electric circuits over the years has led researchers to consider the application of functional anti-irradiation material to devices. The current focus is on developing complementary metal-oxide semiconductors (CMOS) with wide bandgap semiconductors (WBGs), which are well suited to large-area aerospace applications. [8][9][10] As shown in Figure 1, a notable material class of WBGs can be listed as metal oxides (MOS), transition-metal dichalcogenides (TMDs), silicon carbide, gallium nitride, and others. WBGs materials contribute robust properties under harsh conditions due to their strong electronic compliance, high-temperature competence, and strong atomic bond energy. [11][12][13][14][15][16] They have been proposed as favorable materials for aerospace and other radiation-hardened applications. Generally, the bandgap in the semiconductor reflects the extra energy that a valence electron must access to become a free electron. Its large bandgap of more than 3 eV guarantees inherent reliability in the semiconductors, providing transparency for the low-energy photons. The large, spherical nsorbitals in the conduction band (CB) of MOS also play a critical role in high dopability for hosting a high density of electrons, leading to the remarkably tolerance to various radiation fluences. [17][18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34][35] Understanding the apparent immunity of the WBGs to various radiation environments and radiation-hard electronic engineering would be critical for pushing the technology further and understanding its limitations. Efforts to address these issues have been underway over the past two decades. Substantial progress has also been made in designing radiation-hard thin films transistors (TFTs) with ZnO, Ga 2 O 3 , In 2 O 3 , SnO 2 , IGZO, SiC, GaN, and many other WBGs, The aspiration of electronic technologies that are resistant to high-energy cosmic radiation is essential for current harsh radiation environment exploration. Integrated circuits mostly require post-processing after designing, making their structures more complex than the standard systems. Thus, unique de...

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Quadruple Cross-Coupled Latch-Based 10T and 12T SRAM Bit-Cell Designs for Highly Reliable Terrestrial Applications

Cited by 118 publications

References 24 publications

Novel Quadruple Cross-Coupled Memory Cell Designs With Protection Against Single Event Upsets and Double-Node Upsets

Novel Quadruple Cross-Coupled Memory Cell Designs With Protection Against Single Event Upsets and Double-Node Upsets

Radiation Effects and Their Impact on SRAM Design

Radiation‐Tolerant Electronic Devices Using Wide Bandgap Semiconductors

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