Q-Band GaAs Bandpass Filter Designs for ALMA Band-1

Lin, Yo-Shen; Hsieh, Yu-Shu; Chiong, Chau-Ching; Hwang, Yuh-Jing

doi:10.1109/lmwc.2009.2020011

Cited by 23 publications

(4 citation statements)

References 7 publications

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“…Table 2 shows the comparison between the designed BPF and other different technologies of BPF (such as printed circuit board (PCB), 10,[19][20][21][22] complementary metal oxide semiconductor (CMOS), 23,24 SiGe, 25,26 GaAs, 27,28 and MEMS [29][30][31][32] ). It can be seen from Table 2, the proposed filter has a smaller size compared to the PCB filter, better return loss, and out-of-band suppression performance compared to the CMOS, SiGe, and GaAs filter.…”

Section: Experimental and Discussionmentioning

confidence: 99%

Investigation on temperature stability of MEMS silicon‐based sixth‐order stripline filter

Xiao

Huai

et al. 2021

Int J RF Mic Comp-Aid Eng

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A double-layer silicon-based stripline filter with a center frequency of 20.76 GHz and a bandwidth of 2 GHz was designed by using an aggressive space mapping (ASM) and fabricated with Microelectromechanical Systems (MEMS) technology. The measurements agreed well with simulation, showing efficiency and accuracy of the ASM algorithm. Over temperature range of À50 to 80 C, the filter's performance such as insertion loss, bandwidth and central frequency were investigated and discussed, and the measured frequency drift is À55.5 ppm/ C and the bandwidth variation is ±4% over temperature range of À50 to 80 C. At 150 C after 1000 h of aging test, although the insertion loss of the filter slightly increased from 2.18 to 2.4 dB and the passband ripple deteriorated, the stopband rejection performance improved.

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Section: Experimental and Discussionmentioning

confidence: 99%

Investigation on temperature stability of MEMS silicon‐based sixth‐order stripline filter

Xiao

Huai

et al. 2021

Int J RF Mic Comp-Aid Eng

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“…Introduction: In the design of integrated circuits (ICs) for front-end systems, passive devices such as bandpass filters (BPFs) [1][2][3][4][5][6][7][8][9][10][11][12], power dividers [13][14][15] and couplers [16][17][18] usually occupy relatively large layout space. In order to reduce the yield cost of ICs, miniaturized design of passive devices is attracting increasing attention.…”

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confidence: 99%

“…Generally, millimetre-wave on-chip BPFs are designed using stepped impedance structures [1][2][3], parallel-coupled lines [4,5] or loaded quarter-wavelength open stubs [6]. For instance, an E-shaped dual-mode resonator and a stepped impedance resonator are utilized to construct a two-pole BPF at 60 GHz in [3], achieving a low insertion loss (IL) of 1.2 dB.…”

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confidence: 99%

A compact 60‐GHz on‐chip bandpass filter in GaAs technology

Xu,

Xi,

Liu

et al. 2024

Electronics Letters

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A compact 60‐GHz on‐chip bandpass filter (BPF) is presented using gallium arsenide (GaAs) technology. To demonstrate the working mechanism of the proposed BPF, an inductor‐capacitor (LC) equivalent circuit model is conceived and analysed for further investigation of the transmission poles (TPs) and zeros. Finally, a prototype of the BPF is fabricated and tested to validate the proposed idea, whose simulated and measured results are in good agreement. The measurements show that it has a centre frequency of 60.2 GHz with a bandwidth of 14%, and the minimum insertion loss (IL) within the passband is 2.57 dB. The chip size, excluding the feedings, is about 0.265 mm × 0.184 mm.

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“…Some works on on-chip bandpass filters (BPFs) have been published in the literature, designed with standard siliconbased technologies [7][8] [9], or GaAs [10] [11], focusing on in-band flatness [12], and improving out-of-band suppression [13]. However, the issue of insertion loss has not been addressed in previous studies.…”

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confidence: 99%

A Low Loss and High Selectivity GaN-on-Si On-Chip Bandpass Filter

Guan,

Chen,

Liu

et al. 2023

IEEE J. Electron Devices Soc.

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We propose a low loss and high selectivity bandpass filter with defected structure on GaN-on-Silicon. GaN-on-Si exhibits a high insertion loss due to the presence of parasitic channels at the AlN/Si interface. It is necessary to strengthen the coupling between the resonators to achieve a low loss. However, this results in weaker suppression of adjacent channels and lower selectivity of frequencies. The designed filter consists of square spiral defect structure resonators and a step impedance resonator, which provides tunable transmission zero and facilitates the adjustment of pass band. With an interdigitated capacitor, at a frequency span from 3.3 to 4.9 GHz, the proposed filter has a low insertion loss of 2.71dB and improves the suppression of adjacent channel (5.8 GHz) by 11.2 dB compared to the traditional SIR filter. The out-of-band suppression of the filter is better than 15.93 dB at 20 GHz. Compared to the traditional SIR filter, the proposed filter achieves a steep transition zone, and an out-ofband rejection reduction by at least 6.6 dB.Index Terms-bandpass filter (BPF), coplanar waveguide, defect structure, GaN-on-Si, on-chip. I. Introductionith the rapid development of wireless communications, WiFi 5G applications urgently need to integrate radio frequency (RF) devices into system-on-chip (SoC) or systemin-package(SiP) in to achieve a cost-effective system-level solution [1][2]. GaN has a higher electron drift saturation speed and a relatively strong breakdown field [3][4]. Currently, GaN-based RF devices have significant advantages in satellite communication, 5G communication, and microwave radar [5]. Chip-to-chip interconnectivity is a common cause of unnecessary parasitic losses in lumped element devices, which Manuscript

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Q-Band GaAs Bandpass Filter Designs for ALMA Band-1

Cited by 23 publications

References 7 publications

Investigation on temperature stability of MEMS silicon‐based sixth‐order stripline filter

Investigation on temperature stability of MEMS silicon‐based sixth‐order stripline filter

A compact 60‐GHz on‐chip bandpass filter in GaAs technology

A Low Loss and High Selectivity GaN-on-Si On-Chip Bandpass Filter

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