Pyrolysis and Photolysis of Trimethylaluminum

Suzuki, Nobumasa; Anayama, C.; Masu, Kazuya; Tsubouchi, Kazuo; Mikoshiba, Nobuo

doi:10.1143/jjap.25.1236

Cited by 48 publications

(16 citation statements)

References 4 publications

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“…So the molar ratio of TDMA to (DMAH) 2 should become 60:40. Although not all the TMA is consumed in this case, it is consistent that the equilibrium in Eqn [1] proceeds to the right side.…”

Section: Evaluation Of the Tdma Fraction In The Mixturesupporting

confidence: 65%

“…Additionally, because Eqn [1] is exothermic, the equilibrium should be biased to the right-hand side. Figure 5 shows infrared absorption spectra for (a) TMA, (b) DMAH, and (c) a TMA/DMAH mixture (3:7 in liquid mixture).…”

Section: Ab-initio Calculationsmentioning

confidence: 99%

“…However, only aluminum carbide film was formed through the pyrolysis of this CVD gas. 1 The first success in metallic aluminum growth and blanket Al-CVD was reported using triisobutylaluminum (TIBA) as a CVD precursor. 2,3 However, when TIBA is used the surface morphology is not suitable for ULSI application because its nucleation density is low.…”

Section: Introductionmentioning

confidence: 99%

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New molecular compound precursor for aluminum chemical vapor deposition

Shinzawa

Uesugi

Nishiyama

et al. 2000

Appl. Organometal. Chem.

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A new type of precursor for aluminum chemical vapor deposition (Al‐CVD) has been developed by mixing dimethylaluminum hydride (DMAH) and trimethylaluminum (TMA). The new precursor has proven itself to be effective for Al‐CVD, where a good selectivity between the Si and the SiO2 mask, a 3.0 μΩ cm resistivity and a pure Al film with low C and O contamination levels (under 100 ppm) were achieved. Quadrupole mass and infrared absorption analysis have shown that the precursor contains a new molecular compound, consisting of a DMAH monomer and a TMA monomer. The mixture has lower viscosity than DMAH and can be easily bubbled for a stable precursor vapor supply. Copyright © 2000 John Wiley & Sons, Ltd.

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“…So the molar ratio of TDMA to (DMAH) 2 should become 60:40. Although not all the TMA is consumed in this case, it is consistent that the equilibrium in Eqn [1] proceeds to the right side.…”

Section: Evaluation Of the Tdma Fraction In The Mixturesupporting

confidence: 65%

Section: Ab-initio Calculationsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

New molecular compound precursor for aluminum chemical vapor deposition

Shinzawa

Uesugi

Nishiyama

et al. 2000

Appl. Organometal. Chem.

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show abstract

“…No film growth was observed for an energy density of 0 J/cm 2 representing a process without any flashing. Consequently, the film growth in this FEALD process is only induced by the FLA. As already mentioned in the previous section, photolytic effects can be excluded in this context, because there is no overlap between the absorption spectra of TMA molecules 51,54 and the light emission spectra of the xenon flash lamps. 36 Instead, each single FLA pulse results in rising the surface temperature above the decomposition temperature of TMA for a short period of time, leading to the thermal decomposition of molecules that are in contact with the surface during that time.…”

Section: Studies On the Flash-enhanced Ald Of Aluminum-based Thin Filmentioning

confidence: 97%

Flash-Enhanced Atomic Layer Deposition: Basics, Opportunities, Review, and Principal Studies on the Flash-Enhanced Growth of Thin Films

Henke

Knaut

Hoßbach

et al. 2015

ECS J. Solid State Sci. Technol.

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Within this work, flash lamp annealing (FLA) is utilized to thermally enhance the film growth in atomic layer deposition (ALD). First, the basic principles of this flash-enhanced ALD (FEALD) are presented in detail, the technology is reviewed and classified. Thereafter, results of our studies on the FEALD of aluminum-based and ruthenium thin films are presented. These depositions were realized by periodically flashing on a substrate during the precursor exposure. In both cases, the film growth is induced by the flash heating and the processes exhibit typical ALD characteristics such as layer-by-layer growth and growth rates smaller than one Å/cycle. The obtained relations between process parameters and film growth parameters are discussed with the main focus on the impact of the FLA-caused temperature profile on the film growth. Similar, substrate-dependent growth rates are attributed to the different optical characteristics of the applied substrates. Regarding the ruthenium deposition, a single-source process was realized. It was also successfully applied to significantly enhance the nucleation behavior in order to overcome substrate-inhibited film growth. Besides, this work addresses technical challenges for the practical realization of this film deposition method and demonstrates the potential of this technology to extend the capabilities of thermal ALD. Atomic layer deposition (ALD) is a specific thin film deposition method wherein film growth is based on a sequence of alternating saturated surface reactions. In a typical ALD process, this is realized by the alternating exposure of the substrate surface to two precursors, which are separated from each other by inert gas purging or chamber evacuation in order to prevent gas phase reactions. As a result, the film growth proceeds in a self-limiting manner and monolayer-by-monolayer, and thus, ALD enables the deposition of thin films with excellent uniformity and conformality as well as with sub-nanometer thickness control. Thanks to these unique characteristics, ALD has emerged as an important thin film deposition technique in semiconductor technology, e.g. in the fabrication of metal-insulator-metal (MIM) film stacks in high aspect ratio dynamic random access memory (DRAM) structures and gate dielectrics in transistors. In recent years, the use of ALD has also expanded into other fields such as optoelectronics, energy conversion and storage devices, micro-electro-mechanical-systems (MEMS) and nanotechnology. [1][2][3][4][5][6] Although a large number of materials have been deposited by ALD so far 1-6 for various applications, there are still a number of challenges in ALD. The deposition temperatures in ALD are mostly lower compared to chemical vapor deposition (CVD) processes due to the different mechanisms of film growth and the necessity to prevent precursor decomposition in order to keep the self-limiting growth behavior of ALD. As a consequence of the lower energy available for film formation, the films may not meet the properties required for the specific...

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“…This figure reveals that the CH 4 probe gas is effectively isolated from the reactor wall at r ¼ 35 mm: Such species confinement to the gas phase is often desired to avoid complexities caused by reactions at the wall, for example, in the study of gas phase decomposition of metalorganic precursors. The wide range of reported values of the activation energy for trimethylaluminum (TMAl) pyrolysis (38 [26] to 158.6 kJ/mol [27]) are likely related to complications from uncontrolled surface reactions. In addition to adjusting the inlet velocity and gas composition, the position of the inlet relative to the susceptor is a common design variable.…”

Section: Steady-state Mass Transport Studiesmentioning

confidence: 99%