Pushing the boundaries of EUV scatterometry: reconstruction of complex nanostructures for next-generation transistor technology

Abstract

EUV scatterometry can retrieve geometrical information from nanoscale grating structures through elastic scattering of EUV radiation and the evaluation of the diffraction intensities. Its geometry and energy range place it in between grazing incidence x-ray scattering (GISAXS) and optical critical dimension (OCD). PTB recently commissioned a new scatterometry setup for the EUV and soft x-ray region that can address sample areas below 100 × 100 μm size by using a comparably steep, grazing angle of incidence of up to 30°. At the same time, the full cone of exit angles of 30° can be detected such that also the higher orders can be recorded in scatterometry measurements. It has been commissioned at PTB’s monochromatic soft x-ray beamline at the synchrotron radiation facility BESSY II and can also be used for simultaneous x-ray fluorescence detection. Its great tunability and energy resolution allows to scan across absorption edges of the relevant semiconductor materials to increase the contrast between different materials. The nanoscale geometry of modern transistor designs features different materials and structure sizes in the single digit nanometer range. Using the information wealth of spectrally resolved scatterometry measurements from the new setup, we present data and first geometrical reconstructions of selected, complex, industry-relevant design studies. The geometrical reconstruction of these structures relies on precise measurements, modelling of the scattering process, and statistical data evaluation methods.

Detection of structural asymmetries in Forksheet FET arrays using Mueller matrix ellipsometry: a theoretical study

“…The analyzed structure arises during the FEOL process, before the forksheet release process step, i.e., when the SiGe sacrificial layer will be completely etched between the Si sheets to reveal the nanosheets, which will become the channels of the MOS devices. This is a so-called short loop sample, in which the gate was not formed, therefore it has a two-dimensional geometry 7 , 8 . Transmission electron microscopy (TEM) images of the structure were used to build and parameterize the theoretical model in R-Soft (Fig.…”

“…This is a so-called short loop sample, in which the gate was not formed, therefore it has a two-dimensional geometry. 7,8 Transmission electron microscopy (TEM) images of the structure were used to build and parameterize the theoretical model in R-Soft (Fig. 1).…”

EUV reflectometry and scatterometry for thin layer and periodic structure characterization

“…1 As a widely used technique for probing the intricate properties of thin films, EUV reflectometry offers a comprehensive suite of capabilities ranging from reflectance measurement and layer thickness determination to the detailed analysis of multilayer interfaces 2 and the precise extraction of optical constants, 3,4 notably the refractive index (n) and the extinction coefficient (k). On the other hand, EUV scatterometry emerges as a potent tool tailored for the assessment of periodic structures, such as gratings, exerting its prowess in geometric parameter analysis, [5][6][7] such as critical dimension (CD), grating pitch, and overlay. Together, these techniques not only enrich our understanding of semiconductor materials and devices but also play a pivotal role in advancing the frontiers of nanotechnology and semiconductor manufacturing.…”