PureB diode fabrication using physical or chemical vapor deposition methods for increased back-end-of-line accessibility

Low temperature pure boron layer deposition for Si diode and micromachining applications

“…Therefore, the parasitic current across the oxide can largely be eliminated by using the differential Ie subtraction method described in Section 3.2.3. It is clear from the current values above about 0.3 V forward bias that, when the leakage is subtracted, the Ie is practically the same for both diodes and close to the values for the LPCVD and Epsilon PureB diodes [133].…”

“…The PureB diode I-V characteristics for the LPCVD and ULPCVD furnace depositions at 400℃ are shown in Fig. 5.12 (a) and (b), respectively [133]. The LPCVD results were measured across the wafer on 50 dies and were found to be very uniform with a JSE value 1.00 ± 0.05 × 10 -12 A/cm 2 that was identical to what was achieved with Epsilon PureB diodes.…”

“…There was more spread in the corresponding Rsh values, the lowest of which were 35 kΩ/sq, just as for the comparable Epsilon PureB diodes, but several were in the 40 -50 kΩ/sq range and a couple as high as 75 kΩ/sq. Such higher values could indicate a small amount of native oxide contamination of the Si surface [133]. The I-V characteristics of the ULPCVD PureB diodes displayed a large spread in current, showing a nonideal leakage as seen in Fig.…”

Strategies to improve electrocatalytic performance of MoS2-based catalysts for hydrogen evolution reactions

“…The deposition parameters, which can vary over a wide range, include the pressure in the reaction chamber, the temperature of the wafer, the ow rate of the gas, the distance of the gas through the wafer, the chemical composition of the gas, the ratio of one gas to another, the role of the intermediate product of the reaction, and whether other reactions are needed. [124][125][126][127][128] Pumera et al 129 synthesized MoS 2 lms via powderless gas deposition. The CVD fabrication method they used is suitable for industry because this powderless and one-step process eliminates the deviations of MoS 2 growth which are likely to arise from the usage of a powder precursor.…”

Synthesis and Characterization of Boron Thin Films Using Chemical and Physical Vapor Depositions

“…Results are therefore machine and material dependent. In fact, similar to the deposition techniques employed in this work to realize boron thin films, over the last decades for a variety of thin films/materials and/or deposition techniques investigations/characterizations/optimizations were performed by MESA + affiliated academic research groups [23][24][25][26][27][28][29][30][31][32][33][34][35][36][37][38][39]. This work is dedicated to research in the realization of boron thin films and focuses on typical film characteristics of films obtained with various deposition techniques.…”