Low temperature pure boron layer deposition for Si diode and micromachining applications

Liu, Xingyu

doi:10.3990/1.9789036552547

Cited by 2 publications

(2 citation statements)

References 115 publications

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“…In this section we demonstrate the potential of PECVD boron thin films for surface and bulk micro-machining, as also recently reported by Liu [70]. A PECVD boron thin film was deposited on a 100 mm diameter silicon wafer (as described in Section 2) at 350 • C, 1800 mTorr, 50 sccm B 2 H 6 (5% in Ar) and 60 W RF.…”

Section: Use Of Pecvd Boron Films As Mask Layer/structural Materials ...supporting

confidence: 61%

Synthesis and Characterization of Boron Thin Films Using Chemical and Physical Vapor Depositions

et al. 2022

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Boron as thin film material is of relevance for use in modern micro- and nano-fabrication technology. In this research boron thin films are realized by a number of physical and chemical deposition methods, including magnetron sputtering, electron-beam evaporation, plasma enhanced chemical vapor deposition (CVD), thermal/non-plasma CVD, remote plasma CVD and atmospheric pressure CVD. Various physical, mechanical and chemical characteristics of these boron thin films are investigated, i.e., deposition rate, uniformity, roughness, stress, composition, defectivity and chemical resistance. Boron films realized by plasma enhanced chemical vapor deposition (PECVD) are found to be inert for conventional wet chemical etchants and have the lowest amount of defects, which makes this the best candidate to be integrated into the micro-fabrication processes. By varying the deposition parameters in the PECVD process, the influences of plasma power, pressure and precursor inflow on the deposition rate and intrinsic stress are further explored. Utilization of PECVD boron films as hard mask for wet etching is demonstrated by means of patterning followed by selective structuring of the silicon substrate, which shows that PECVD boron thin films can be successfully applied for micro-fabrication.

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Section: Use Of Pecvd Boron Films As Mask Layer/structural Materials ...supporting

confidence: 61%

Synthesis and Characterization of Boron Thin Films Using Chemical and Physical Vapor Depositions

et al. 2022

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“…A batch furnace dedicated ultra-low-pressure CVD (ULPCVD) system was developed for the deposition of B on Si. As described in [18], this was done by modifying a low-pressure CVD (LPCVD) system with a connection to a turbopump. The precursor was 5% diborane (B2H6) which was diluted in argon (Ar) as carrier gas.…”

Section: Batch Furnace Cvd Boron Depositionmentioning

confidence: 99%

Batch Furnace Chemical Vapor Deposition of Pure Boron Layers on Si and GaN Substrates for Low-Leakage-Current Diode Fabrication

2023

JST: ETSD

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Boron deposition on both n-Si and n-GaN in the temperature range 250 - 500 °C, has been shown to form diodes with low saturation currents, i.e., electron injection from the n-substrate into the B-layer was efficiently suppressed. Moreover, down to 3-nm-thick B-layers on Si were shown to form a material barrier to Al, opening the possibility of fabricating Au-free gates for gallium-nitride high-electron-mobility transistors (GaN HEMTs). Several different chemical- and physical-vapor deposition (CVD/PVD) methods for depositing B have been studied for fabricating p+n-like Si diodes, called PureB diodes, all with comparable results. In this paper, the deposition of B-layers from diborane in a CVD batch furnace system is evaluated, particularly for use as a barrier material to enable Al-contacting of GaN diodes. These Al-B diodes could provide an option for fabricating low-leakage diodes that are compatible with complementary metal-oxide-semiconductor (CMOS) processing at industrially attractive high throughput. The bulk B has high resistivity, which, combined with the fact that non-uniformities in the nm range, are typical due to gas depletion along the furnace tube and gives uncontrollable, often high diode series resistance. A simulation study shows that Al-B could, nevertheless, be used as a gate stack in HEMTs for low-frequency power applications.

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Low temperature pure boron layer deposition for Si diode and micromachining applications

Cited by 2 publications

References 115 publications

Synthesis and Characterization of Boron Thin Films Using Chemical and Physical Vapor Depositions

Synthesis and Characterization of Boron Thin Films Using Chemical and Physical Vapor Depositions

Batch Furnace Chemical Vapor Deposition of Pure Boron Layers on Si and GaN Substrates for Low-Leakage-Current Diode Fabrication

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