Pulsed-laser testing methodology for single event transients in linear devices

Abstract

Abstract-A methodology for testing linear devices for single event transients that uses a pulsed laser to supplement a heavy-ion accelerator is proposed. The method is based on an analysis of plots of transient amplitudes versus width over a range of laser pulse input energies and heavy-ion LETs. Additional data illustrating the method are presented that include the dependence of SETs on circuit configuration in a comparator (LM111) and operational amplifier (LM124). If judiciously used, the methodology has the advantage that the amount of heavy-ion accelerator testing can be reduced.

Modification of the LM124 Single Event Transients by Load Resistors

“…3 is called Q12 at the datasheet by National Semiconductors [12]. The actual structure has been determined by several authors [7], [8], [10], [19], [20], although there are minor changes among the schematics provided by the different works. In particular, Fig.…”

“…The internal topology of the LM124 (Fig. 4) has been depicted in several papers [7], [8], [10], [19], [20] although scarce information is provided about the characteristic of the internal transistors. In fact, the typical procedure is separating the individual transistors by means of laser or ion beams and extract the SPICE parameters using a microprobe and specific instrumentation [18].…”

Two-Photon Absorption (TPA) backside pulsed laser tests in the LM324

“…Usually, experiments consist in scanning the front surface to find the most sensitive devices [1]- [3] or selecting one interesting device and exploring its sensitivity along the Z-axis [4]. In this paper, both kinds of test are mixed using Two-Photon Absorption (TPA) [5] in order to perform XY scans at different focus depth.…”

The Effects of Elevated Temperature on Pulsed-Laser-Induced Single Event Transients in Analog Devices

“…SETs can differ drastically in pulse characteristics depending on the ion energy, strike location, bias configuration, and device circuitry [1], [3]- [5]. Since the devices onboard satellites often operate over a wide range of temperatures, it is also necessary to understand the effects of temperature on SETs.…”

“…Pulsed-laser testing is widely accepted as a reliable and cost-effective test method for measuring SETs [5], [9]. Here we present results of laser-light-induced SETs in the LM124 operational amplifier and the LM139 voltage comparator at temperatures ranging from 300 K to 393 K. The LM124 and LM139 have been extensively tested with pulsed-laser light for SETs previously [3], [5], [10].…”