Pulsed-Laser Testing for Single-Event Effects Investigations

Büchner, S.; Miller, F.; Pouget, Vincent; McMorrow, D.

doi:10.1109/tns.2013.2255312

Cited by 132 publications

(74 citation statements)

References 52 publications

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“…Laser SEE tests were performed at the pulsed laser facility at the Naval Research Laboratory (NRL) [12], [13]. We tested with a pulsed laser at the Naval Research Laboratory using both Single-Photon Absorption (SPA) and Two-Photon Absorption (TPA) techniques [14] with the laser light having a wavelength of 590 nm resulting in a skin depth (depth at which the light intensity decreased to 1/e -or about 37% -of its intensity at the surface) of 2µm. A nominal pulse rate of 1 kHz was utilized.…”

Section: A Test Facilitiesmentioning

confidence: 99%

NASA Goddard Space Flight Center's Compendium of Recent Single Event Effects Results

O'Bryan

LaBel²,

Wilcox³

et al. 2018

2018 IEEE Nuclear &Amp; Space Radiation Effects Conference (NSREC 2018)

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Section: A Test Facilitiesmentioning

confidence: 99%

NASA Goddard Space Flight Center's Compendium of Recent Single Event Effects Results

O'Bryan

LaBel²,

Wilcox³

et al. 2018

2018 IEEE Nuclear &Amp; Space Radiation Effects Conference (NSREC 2018)

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“…The generation of carriers in semiconductor material by photoelectric effect has been used for decades in various fields such as failure analysis and defect localization [25], single event effect testing for space applications [11] and, as detailed in Section 2, security analysis.…”

Section: Pulsed Laser Interaction With Siliconmentioning

confidence: 99%

“…Furthermore, TPA requires high peak power pulses achieved with a femtosecond laser which can be difficult to integrate to the test set-up. More details about SPA and TPA can be found in [11]. In silicon, with pulses of duration within picosecond range or longer, and at the wavelengths shorter than 1100 nm, SPA will be the dominant mechanism.…”

Section: Pulsed Laser Interaction With Siliconmentioning

confidence: 99%

Extensive Laser Fault Injection Profiling of 65 nm FPGA

Breier

He²,

Bhasin

et al. 2017

J Hardw Syst Secur

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Fault injection attacks have been widely investigated in both academia and industry during the past decade. In this attack approach, the adversary intentionally induces This paper is an extension of the paper entitled "Comprehensive Laser Sensitivity Profiling and Data Register Bit-Flips for Cryptographic Fault Attacks in 65 nm FPGA," presented at SPACE'16 conference. This version contains an extended related work, covers chip preparation in more details, discusses compatibility with cryptographic fault injection attacks, and presents a countermeasure against laser profiling. computational faults in the security components of the integrated circuit (IC) for deducing the confidential information processed or stored inside the device. However, the internal architecture of real-world devices is typically unknown to the attacker and the insufficient information about the device internals often cannot satisfy requirements of a practical fault injection attack. In this paper, we target Field Programmable Gate Array (FPGA) that is widely used in hardware security applications. By analyzing the faulty outputs of implemented algorithms, the scale of logic arrays and the sensitive logic cells can be precisely profiled. Using the outcome of this work, practical attacks can be significantly accelerated, without a need of time-consuming chip-scale injection scan. In addition, the observed fault models are compatible with most of the previously proposed fault models for differential or algebraic fault attacks (DFA/AFA). Moreover, a low-cost and highly sensitive logic-level countermeasure for predicting the laser fault injection attempt is described, which can be applied into any digital IC with a minimal overhead. Jakub

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“…We then improved the simulation model to fit with our new results. Note that a nanosecond range pulse duration is common for hardware security testing, whereas a picosecond range duration is mandatory for emulating radiation effects caused by ionizing particles [13].…”

Section: Introductionmentioning

confidence: 99%

Laser fault injection into SRAM cells: Picosecond versus nanosecond pulses

Lacruche

Borrel

Champeix

et al. 2015

2015 IEEE 21st International on-Line Testing Symposium (IOLTS)

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Abstract-Laser fault injection into SRAM cells is a widely used technique to perform fault attacks. In previous works, Roscian and Sarafianos studied the relations between the layout of the cell, its different laser-sensitive areas and their associated fault model using 50 ns duration laser pulses. In this paper, we report similar experiments carried out using shorter laser pulses (30 ps duration instead of 50 ns). Laser-sensitive areas that did not appear at 50 ns were observed. Additionally, these experiments confirmed the validity of the bit-set/bit-reset fault model over the bit-flip one. We also propose an upgrade of the simulation model they used to take into account laser pulses in the picosecond range. Finally, we performed additional laser fault injection experiments on the RAM memory of a microcontroller to validate the previous results.

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Pulsed-Laser Testing for Single-Event Effects Investigations

Cited by 132 publications

References 52 publications

NASA Goddard Space Flight Center's Compendium of Recent Single Event Effects Results

NASA Goddard Space Flight Center's Compendium of Recent Single Event Effects Results

Extensive Laser Fault Injection Profiling of 65 nm FPGA

Laser fault injection into SRAM cells: Picosecond versus nanosecond pulses

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