NASA Goddard Space Flight Center's Compendium of Recent Single Event Effects Results

O'Bryan, Martha V.; LaBel, Kenneth A.; Wilcox, Edward P.; Chen, Dakai; Wyrwas, Edward J.; Campola, Michael J.; Casey, Megan C.; Lauenstein, Jean-Marie; Topper, Alyson D.; Szabo, Carl M.; Pellish, Jonathan A.; Berg, Melanie D.; Lewellen, John W.; Holloway, Michael

doi:10.1109/nsrec.2018.8584264

Cited by 6 publications

(6 citation statements)

References 6 publications

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“…Low energy protons (fluence of 1.45⋅10 14 cm -2 ) lead to the complete degradation of silicon power diodes, similar to the effects of much higher γ-ray fluences (4.25⋅10 20 cm -2 ). Experiments have shown that electron and neutron radiations are less harmful than protons and γ-rays [102], although with some vulnerability, such as the case of the Infineon TM BAR64-05 E6327 RF PIN diode [103]. In summary, in terms of fluence, diode failure typically occurs around 1⋅10 14 cm -2 for 1 MeV protons, roughly 1⋅10 17 cm -2 for 100 MeV protons, and over 1⋅10 20 cm -2 for γ-rays [104].…”

Section: A Diodesmentioning

confidence: 99%

“…In contrast, SEE testing reveals vulnerabilities in certain diode types. While many devices exhibit no SEE occurrence, including high-speed switching diodes such as the onsemi TM MMBD1501A and the NXP TM BAS16,215, as well as some Schottky types like the onsemi TM NSR0140P2T5G, others degrade during testing, such as the Infineon TM BAR64-05 E6327 RF PIN diode [103]. This indicates varying levels of susceptibility and highlights the need for protective measures.…”

Section: A Diodesmentioning

confidence: 99%

“…Additional SEE testing on other diode types including the Infineon TM HFB16HY20CC, NXP TM BAS70-05-7-F, onsemi TM NSR0140P2T5G, has demonstrated strong resilience, with no catastrophic failures or parametric degradation up to maximum LET levels [103]. However, some exceptions remain: while Zener diodes such as the BZX84 series from NXP TM experiences degradation when biased at 100% Zener voltage, their parameters remain within specification following irradiation [112].…”

Section: A Diodesmentioning

confidence: 99%

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COTS Devices for Space Missions in LEO

Brunetti,

Campiti,

Tagliente

et al. 2024

IEEE Access

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In the framework of the NewSpace revolution, time-to-market and budget constraints drive the development of small and medium-sized satellites in Low Earth Orbit (LEO) orbit. The adoption of Commercial Off-the-Shelf (COTS) components represents the current trend to fulfill the NewSpace goals, given their low cost, wide product availability, small time-to-market, and the ability to integrate the most recent advancements in space applications. However, migrating from radiation-hardened (rad-hard) devices to COTS ones requires ensuring comparable reliability levels. To this end, an "upscreening" of the COTS devices and systems should be performed in compliance with widely adopted standard regulations, such as those used by ESA or NASA. In this paper, we review COTS components and systems, such as diodes, Bipolar Junction Transistors (BJTs), Field Effect Transistors (FETs), Operational Amplifiers (OPAMPs), memories, and Field Programmable Gate Arrays (FPGAs), proven-flight or ad-hoc tested for compliance with standard regulations. In conclusion, the most promising devices in terms of cost and radiation tolerances are identified, providing useful benchmarks for space engineers developing COTS-based innovative systems.

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Section: A Diodesmentioning

confidence: 99%

Section: A Diodesmentioning

confidence: 99%

Section: A Diodesmentioning

confidence: 99%

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COTS Devices for Space Missions in LEO

Brunetti,

Campiti,

Tagliente

et al. 2024

IEEE Access

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“…Authors in [48] studied the SEE susceptibility of an AS008MA12A-C1SC, an 8-Mb STT-MRAM, under heavy ions. SEFIs with large numbers of bitflips happened at a LET of 1.84 MeV•cm 2 /mg and higher; however, they disappeared with a power cycle.…”

Section: ) Radiation Effects On Mramsmentioning

confidence: 99%

Single Event Upsets Under Proton, Thermal, and Fast Neutron Irradiation in Emerging Nonvolatile Memories

et al. 2022

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In New Space, the need for reduced cost, higher performance, and more prompt delivery plans in radiation-harsh environments have motivated spacecraft designers to use Commercial-Off-The-Shelf (COTS) memories and emerging technology devices. This paper investigates the behavior of state-of-the-art memories manufactured in emerging technologies, including Ferroelectric Random-Access Memory (FRAM), Resistive Random-Access Memory (ReRAM), and Magnetic Random-Access Memory (MRAM), against radiation effects in static and dynamic modes. Radiation-ground tests were conducted under 15-MeV and 1-MeV protons, thermal and 14.8-MeV neutrons leading to various categories of radiation effects. Experimental results will show clear evidence of the robustness of bitcells manufactured using these emerging technologies against radiation, but at the same time, some susceptibility in these devices to suffer radiation effects when working in dynamic mode. Experimental results with the CY15B102Q and CY15B104Q FRAMs (Infineon Technologies), the MB85AS4MT, and MB85AS8MT ReRAMs (Fujitsu), and the MR10Q010CSC and MR25H40CDF MRAMs (Everspin) will be presented and discussed.

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“…[88],[93].B. Oxide-Based Resistive RAM Oxide-based resistive switching RAM (OxRAM), often abbreviated ReRAM, RRAM, or OxRAM, is a two-terminal resistive device which uses the electrically induced resistance modulation due to vacancy motion in metal oxides as the basis of memory.…”

mentioning

confidence: 99%

Radiation Effects in Advanced and Emerging Nonvolatile Memories

Marinella

2021

IEEE Trans. Nucl. Sci.

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Despite hitting major roadblocks in 2-D scaling, NAND flash continues to scale in the vertical direction and dominate the commercial nonvolatile memory market. However, several emerging nonvolatile technologies are under development by major commercial foundries or are already in small volume production, motivated by storage-class memory and embedded application drivers. These include spin-transfer torque magnetic random access memory (STT-MRAM), resistive random access memory (ReRAM), phase change random access memory (PCRAM), and conductive bridge random access memory (CBRAM). Emerging memories have improved resilience to radiation effects compared to flash, which is based on storing charge, and hence may offer an expanded selection from which radiation-tolerant system designers can choose from in the future. This review discusses the material and device physics, fabrication, operational principles, and commercial status of scaled 2-D flash, 3-D flash, and emerging memory technologies. Radiation effects relevant to each of these memories are described, including the physics of and errors caused by total ionizing dose, displacement damage, and single-event effects, with an eye toward the future role of emerging technologies in radiation environments.

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NASA Goddard Space Flight Center's Compendium of Recent Single Event Effects Results

Abstract: We present the results of single event effects (SEE) testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results.

Cited by 6 publications

References 6 publications

COTS Devices for Space Missions in LEO

COTS Devices for Space Missions in LEO

Single Event Upsets Under Proton, Thermal, and Fast Neutron Irradiation in Emerging Nonvolatile Memories

Radiation Effects in Advanced and Emerging Nonvolatile Memories

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