Pulsed-laser deposition of textured cerium oxide thin films on glass substrates at room temperature

Chaudhuri, Tapas Kumar; Phok, Sovannary; Bhattacharya, R. N.

doi:10.1016/j.tsf.2007.01.053

Cited by 6 publications

(6 citation statements)

References 20 publications

(23 reference statements)

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“…An increase in deposition time does not produce important changes in the morphology of films 4,32,35,39 Figure 6. shows the dependence of the thickness of the film deposited at 425°C as a function of deposition time.…”

Section: Resultsmentioning

confidence: 99%

“…Several physical and chemical processes have been used to prepare CeO 2 thin films, including flash evaporation, 3 electron‐beam evaporation, 4,5,9,15 spin coating, 1,2,16,23 sputtering, 6,29 MOCVD, 30 laser ablation, 31–33 , and spray pyrolysis in its three versions: electrostatic, pneumatic, and ultrasonic 7,11–14,18–20,33,34 . Among them, the spray pyrolysis techniques are very attractive for the industry, because they allow the deposition of a wide variety of ceramic films over large areas with a simple process at low costs.…”

Section: Introductionmentioning

confidence: 99%

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Synthesis and Characterization of Nanostructured Cerium Dioxide Thin Films Deposited by Ultrasonic Spray Pyrolysis

García-Sánchez

Ortíz

Santana

et al. 2009

Journal of the American Ceramic Society

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Nanostructured thin films of cerium dioxide have been prepared on single-crystalline silicon substrates by ultrasonic spray pyrolysis using cerium acetylacetonate as a metal-organic precursor dissolved in anhydrous methanol and acetic acid as an additive. The morphology, structure, optical index, and electrical properties were studied by X-ray diffraction, scanning electron microscopy, atomic force microscopy, ellipsometry, and impedance spectroscopy. The use of additives is very important to obtain crack-free films. The substrate temperature and flow rate was optimized for obtaining smooth (R a o0.4 nm), dense (n42), and homogeneous nanocrystalline films with grain sizes as small as 10 nm. The influence of thermal annealing on the structural properties of films was studied. The low activation energy calculated for total conductivity (0.133 eV) is attributed to the nanometric size of the grains.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Synthesis and Characterization of Nanostructured Cerium Dioxide Thin Films Deposited by Ultrasonic Spray Pyrolysis

García-Sánchez

Ortíz

Santana

et al. 2009

Journal of the American Ceramic Society

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“…There is abundant literature concerning the growth of ceria films on various metallic and nonmetallic supports, such as Au, Pd, Ru, Ni, Pt, Cu, Rh, Si, Al 2 O 3 and TiOx, and glass …”

Section: Introductionmentioning

confidence: 99%

“…There is abundant literature concerning the growth of ceria films on various metallic and nonmetallic supports, such as Au, [11] Pd, [11][12][13] Ru, [14] Ni, [15] Pt, [16,17] Cu, [18][19][20][21] Rh, [22,23] Si, [24,1] Al 2 O 3 and TiOx, and [25] glass. [26] The physicochemical properties of the deposited cerium oxide films depend significantly on the populations of individual chemical states of cerium. The most common method to identify oxidation states of elements and their populations is X-ray photoelectron spectroscopy (XPS).…”

Section: Introductionmentioning

confidence: 99%

XPS and factor analysis study of initial stages of cerium oxide growth on polycrystalline tungsten

Polyak

Bastl

2015

Surf. Interface Anal.

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The initial stages of growth of the nanostructured cerium oxide deposited on the polycrystalline tungsten surface by pulsed laser deposition are studied using XPS technique. The population of Ce (III) and Ce (IV) oxidation states in the deposited CeO2−x layers is determined applying factor analysis method. Tungsten atoms react with oxygen from the cerium oxide nanoparticles already at the room temperature, and a layer of tungsten trioxide is formed at the interface. Gradual heating of the samples up to 900 K leads to the increase of the thickness of WO3 oxide layer and a partial reduction of Ce (IV) to Ce (III). The spectra of O (1s) photoelectrons are composed from a signal originating from metal oxides and a signal of surface superoxide and hydroxyl groups. Factor analysis was performed on the spectra of Ce (3d) photoelectrons to determine the position, shape, and intensity of the spectral components belonging to Ce (III) and Ce (IV) oxidation states. We propose a new simple method to generate components of the spectroscopic meaning. The basic idea of our method consists in the use of the slightly positive values instead of zeros to the needle test vector. Two components are required to reproduce the original data within the experimental errors. Copyright © 2015 John Wiley & Sons, Ltd.

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“…Cerium oxide plays an important role in electrochromic devices [6] as a substrate for high temperature superconductors [7], silicon-oninsulator (SOI) structures [8,9], miniaturized capacitors [10,11], counter electrode in smart windows due to its high transparency [12,13]. Various techniques have been employed to prepare cerium oxide and gadolinium doped cerium oxide thin films, such as sol-gel method [14], sputtering [15], electron beam evaporation [16], metal organic chemical vapor deposition [17], atomic layer * E-mail: nagarajuphysics@gmail.com deposition [18], spray pyrolysis [19] and pulsed laser deposition (PLD) [20][21][22][23]. Pulsed laser deposition is the most predominant method of all aforesaid techniques as it produces layers with high uniformity, good stoichiometry as well as free from contamination, which could arise during the deposition process.…”

Section: Introductionmentioning

confidence: 99%

Preparation and microstructural characterization of Si(100) Ce1−x GdxO2−δ thin films prepared by pulsed laser deposition technique

Nagaraju¹,

Vijayakumar

Phase³

et al. 2014

Materials Science-Poland

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Microstructural properties of Ce 1−x Gd x O 2−δ (x = 0 to 0.3) thin films prepared by pulsed laser deposition technique were studied. The thin films were deposited on Si(100) substrate at a substrate temperature of 973 K at the oxygen partial pressure of 0.2 Pa using KrF excimer laser with energy of 220 mJ. The prepared thin films were characterized by X-ray diffraction, Raman spectroscopy and atomic force microscopy. X-ray diffraction analysis confirmed the polycrystalline nature of the thin films. Crystallite size, strain and dislocation density were calculated. The Raman studies revealed the formation of Ce-O with the systematic variation of peak intensity and full width half maxima depending on concentration of gadolinium dopant. The thickness of the films was estimated using Talystep profiler. The surface roughness was estiamted based on AFM.

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Pulsed-laser deposition of textured cerium oxide thin films on glass substrates at room temperature

Cited by 6 publications

References 20 publications

Synthesis and Characterization of Nanostructured Cerium Dioxide Thin Films Deposited by Ultrasonic Spray Pyrolysis

Synthesis and Characterization of Nanostructured Cerium Dioxide Thin Films Deposited by Ultrasonic Spray Pyrolysis

XPS and factor analysis study of initial stages of cerium oxide growth on polycrystalline tungsten

Preparation and microstructural characterization of Si(100) Ce1−x GdxO2−δ thin films prepared by pulsed laser deposition technique

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