One-dimensional ZnO nanostructures (nanowires/nanorods) are attractive materials for applications such as gas sensors, biosensors, solar cells, and photocatalysts. This is due to the relatively easy production process of these kinds of nanostructures with excellent charge carrier transport properties and high crystalline quality. In this work, we review the photoluminescence (PL) properties of single and collective ZnO nanowires and nanorods. As different growth techniques were obtained for the presented samples, a brief review of two popular growth methods, vapor-liquid-solid (VLS) and hydrothermal, is shown. Then, a discussion of the emission process and characteristics of the near-band edge excitonic emission (NBE) and deep-level emission (DLE) bands is presented. Their respective contribution to the total emission of the nanostructure is discussed using the spatial information distribution obtained by scanning transmission electron microscopy−cathodoluminescence (STEM-CL) measurements. Also, the influence of surface effects on the photoluminescence of ZnO nanowires, as well as the temperature dependence, is briefly discussed for both ultraviolet and visible emissions. Finally, we present a discussion of the size reduction effects of the two main photoluminescent bands of ZnO. For a wide emission (near ultra-violet and visible), which has sometimes been attributed to different origins, we present a summary of the different native point defects or trap centers in ZnO as a cause for the different deep-level emission bands.

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Strong white and blue photoluminescence (PL) from as-grown silicon nanocrystals (nc-Si) in SiNx films prepared by remote plasma enhanced chemical vapour deposition using SiCl4/NH3 mixtures is reported. The colour and intensity of the PL could be controlled by adjusting the NH3 flow rate. Samples with white emission were annealed at 1000 °C, obtaining a strong improvement of the PL intensity with a blue colour. The PL can be attributed to quantum confinement effect in nc-Si embedded in SiNx matrix, which is improved when a better passivation of nc-Si surface with chlorine and nitrogen atoms is obtained. The size, density and structure of the nc-Si in the as-grown and annealed films were confirmed and measured by high-resolution transmission electron microscopy.

Articles you may be interested inDistinguishing the effect of surface passivation from the effect of size on the photonic and electronic behavior of porous siliconWe have investigated the influence of the microstructure and chemistry of the surrounding host on the strong visible photoluminescence ͑PL͒ from silicon nanoclusters ͑nc-Si͒ embedded in three different silicon-based dielectric compounds: Si x N y : H , Cl, Si x N y O z : H , Cl, and Si x O z :H,Cl, obtained from silicon nitride films deposited by SiH 2 Cl 2 /NH 3 /H 2 plasma-enhanced chemical vapor deposition at different growth pressures. A blueshift is found in the PL coming from the nc-Si as the content of oxygen in the surrounding host is increased, and a significant improvement in PL intensity is achieved when the nc-Si are well passivated with O instead of H. We discuss the PL behavior in terms of the quantum confinement model and passivation state of the nc-Si surface.

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