Pulsed laser deposition as a materials research tool

Horwitz, J. S.; Chrisey, Douglas B.; Stroud, Rhonda M.; Carter, A.C.; Kim, J.; Chang, Wontae; Pond, J.M.; Kirchoefer, Steven W.; Osofsky, M. S.; Koller, Daniel

doi:10.1016/s0169-4332(97)00683-1

Cited by 19 publications

(6 citation statements)

References 13 publications

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“…Normally, a congruent transfer of compound targets is observed [ 67 ], nevertheless multiple targets are commonly used as stoichiometry variations can be obtained in a much more easy and flexible way [ 68 ]. Similarly, elimination of particulates or droplets is still an ongoing research topic [ 69 , 70 ]. Currently, PLD is used widely for growth of high temperature superconducting oxides, dielectrics, ferroelectrics and semiconductors.…”

Section: Physical Vapor Depositionmentioning

confidence: 99%

Thin Film Deposition Using Energetic Ions

2010

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One important recent trend in deposition technology is the continuous expansion of available processes towards higher ion assistance with the subsequent beneficial effects to film properties. Nowadays, a multitude of processes, including laser ablation and deposition, vacuum arc deposition, ion assisted deposition, high power impulse magnetron sputtering and plasma immersion ion implantation, are available. However, there are obstacles to overcome in all technologies, including line-of-sight processes, particle contaminations and low growth rates, which lead to ongoing process refinements and development of new methods. Concerning the deposited thin films, control of energetic ion bombardment leads to improved adhesion, reduced substrate temperatures, control of intrinsic stress within the films as well as adjustment of surface texture, phase formation and nanotopography. This review illustrates recent trends for both areas; plasma process and solid state surface processes.

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Section: Physical Vapor Depositionmentioning

confidence: 99%

Thin Film Deposition Using Energetic Ions

2010

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“…October 13, 2007 p. 5 Today, PLD is used widely for the deposition of HT c films, as well as for the growth of dielectrics, ferroelectrics, and other materials with complex composition [9].…”

Section: Film Growth Mechanisms In Pldmentioning

confidence: 99%

Film growth mechanisms in pulsed laser deposition

Aziz¹

2008

Appl. Phys. A

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This paper reviews our recent studies of the fundamentals of growth morphology evolution in Pulsed Laser Deposition in two prototypical growth modes: metal-on-insulator island growth and semiconductor homoepitaxy. By comparing morphology evolution for pulsed laser deposition and thermal deposition in the same dual-use chamber under identical thermal, background, and surface preparation conditions, and varying the kinetic energy by varying the laser fluence or using an inert background gas, we have isolated the effect of kinetic energy from that of flux pulsing in determining the differences between morphology evolution in these growth methods.In each growth mode analytical growth models and Kinetic Monte Carlo simulations for thermal deposition, modified to include kinetic energy effects, are successful at explaining much of what we observe experimentally.

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“…For higher performance applications, such as tunable microwave devices, performance requirements favor the use of processing techniques that are better suited to heteroepitaxial film growth, such as PVD or CVD. The main PVD techniques used for fabricating epitaxial ferroelectric thin films are pulsed laser deposition (PLD) and sputtering (radio frequency, DC magnetron, and ion beam), which permit the layer-by-layer deposition of various dielectrics 21,22 and have demonstrated heteroepitaxial film growth, such as BaTiO 3 23 and BST. 24 The PLD method is suitable to deposit epitaxial films at low substrate temperatures, and the film orientation is readily controlled by the orientation of the single-crystal substrate, which offers numerous advantages, including film stoichiometry close to the target, low contamination level, high deposition rate, and nonequilibrium processing.…”

Section: Materials Processingmentioning

confidence: 99%

Recent progress of (Ba,Sr)TiO3 thin films for tunable microwave devices

Zhu

Zhou

et al. 2003

Journal of Elec Materi

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The (Ba 1-x Sr x )TiO 3 (BST) ferroelectric thin films exhibit outstanding dielectric properties, even at high frequencies (Ͼ1 GHz), and large, electric-field dielectric tunability. This feature makes them suitable for developing a new class of tunable microwave devices. The dielectric properties and dielectric tuning property of BST thin films are closely related to the film compositions, substrate types, and post-deposition process. The successful implementation of BST films as high-frequency dielectrics in electrically tunable microwave devices requires a detailed understanding of both their processing and material properties. This paper will review the recent progress of BST thin films as active dielectrics for tunable microwave devices. The technical aspects of BST thin films, such as processing methods, post-annealing process, film compositions, film stress, oxygen defects, and interfacial structures between film and substrate, are briefly reviewed and discussed with specific samples from the recent literature. The major issues requiring additional investigations to improve the dielectric properties of BST thin films for tunable microwave applications are also discussed.

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Pulsed laser deposition as a materials research tool

Cited by 19 publications

References 13 publications

Thin Film Deposition Using Energetic Ions

Thin Film Deposition Using Energetic Ions

Film growth mechanisms in pulsed laser deposition

Recent progress of (Ba,Sr)TiO3 thin films for tunable microwave devices

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