Thin Film Deposition Using Energetic Ions

Abstract

One important recent trend in deposition technology is the continuous expansion of available processes towards higher ion assistance with the subsequent beneficial effects to film properties. Nowadays, a multitude of processes, including laser ablation and deposition, vacuum arc deposition, ion assisted deposition, high power impulse magnetron sputtering and plasma immersion ion implantation, are available. However, there are obstacles to overcome in all technologies, including line-of-sight processes, particle contaminations and low growth rates, which lead to ongoing process refinements and development of new methods. Concerning the deposited thin films, control of energetic ion bombardment leads to improved adhesion, reduced substrate temperatures, control of intrinsic stress within the films as well as adjustment of surface texture, phase formation and nanotopography. This review illustrates recent trends for both areas; plasma process and solid state surface processes.

Critical angles in DC magnetron glad thin films

“…So for convenience and because it describes well the different samples, the substrate inclination angle is still used, even if this parameter is not the only and dominant one to explain the film behavior (see previous section). As stress is induced partially by the flux energy [52,53], SIMTRA calculations are performed. The average energy of the impinging particles (metallic neutral) is obtained and the difference DE average in comparison to the result for a substrate at a ¼ 0 (15.9, 17.6 and 23.8 eV for Al, Cr and Ti respectively) is presented versus the substrate inclination angle (Fig.…”

Physical vapour deposition of zirconia on titanium: fabrication, characterization and interaction with human osteoblast cells

“…The surface roughness (R a ) of M2 is 0.40 lm (R z 1.10 lm), essentially determined by the roughness of the base material as no additional roughness is introduced during the coating process as the surface mobility is high enough to allow atomically flat surfaces on flat substrates [28]. At the same time, high spatial frequencies are subdued during the deposition, leading to a partial smoothening compared to the original surfaces of the titanium substrates.…”

Nanoscale Characterization of Cr, Cu, Al and Ni Metallic Magnetron Nanofilm Multilayers on Sitall

“…кластеры [3]. Таким образом, уже в ходе самого раз-ряда при МР пленочных слоев создаются условия для возникновения кластерных пучков, при после-дующем осаждении которых на подложку должны существенно изменяться характеристики создавае-мых магнетронных слоев [4].…”

“…кластеры [3]. Таким образом, уже в ходе самого раз-ряда при МР пленочных слоев создаются условия для возникновения кластерных пучков, при после-дующем осаждении которых на подложку должны существенно изменяться характеристики создавае-мых магнетронных слоев [4].Вторым каналом, обуславливающим класте-ризацию магнетронных нанопленок, очевидно, могут выступать физические явления на самой подложке [5, 6]. Согласно классическим представле-ниям, в качестве них могут выступать: послойный рост (Франка-ван дер Мерве), островковый рост (Вольмера-Вебера), рост трехмерных островков (Странски-Крастанова).…”