Critical angles in DC magnetron glad thin films

Siad, Ahcene; Besnard, Aurélien; Nouveau, Corinne; Jacquet, Philippe

doi:10.1016/j.vacuum.2016.07.012

Cited by 45 publications

(30 citation statements)

References 60 publications

(50 reference statements)

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“…This difference between ρ x and ρ y is once again related to the microstructure of W thin films. It was clearly demonstrated that GLAD deposition of columnar films with incident angles higher than 60 • (critical-like angle) produced significant structural and uniaxial anisotropy in the substrate plane induced by the shadowing effect [57]. Thus, an anisotropic distribution of the grain boundary potential barrier heights was formed in the direction of the incoming atoms (x-axis), especially at low argon sputtering pressure due to the high directional behavior of the particle flux.…”

Section: Electrical Resistivitymentioning

confidence: 99%

Influence of Thickness and Sputtering Pressure on Electrical Resistivity and Elastic Wave Propagation in Oriented Columnar Tungsten Thin Films

et al. 2020

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Tungsten films were prepared by DC magnetron sputtering using glancing angle deposition with a constant deposition angle α = 80°. A first series of films was obtained at a constant pressure of 4.0 × 10−3 mbar with the films’ thickness increasing from 50 to 1000 nm. A second series was produced with a constant thickness of 400 nm, whereas the pressure was gradually changed from 2.5 × 10−3 to 15 × 10−3 mbar. The A15 β phase exhibiting a poor crystallinity was favored at high pressure and for the thinner films, whereas the bcc α phase prevailed at low pressure and for the thicker ones. The tilt angle of the columnar microstructure and fanning of their cross-section were tuned as a function of the pressure and film thickness. Electrical resistivity and surface elastic wave velocity exhibited the highest anisotropic behaviors for the thickest films and the lowest pressure. These asymmetric electrical and elastic properties were directly connected to the anisotropic structural characteristics of tungsten films. They became particularly significant for thicknesses higher than 450 nm and when sputtered particles were mainly ballistic (low pressures). Electronic transport properties, as well as elastic wave propagation, are discussed considering the porous architecture changes vs. film thickness and pressure.

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Section: Electrical Resistivitymentioning

confidence: 99%

Influence of Thickness and Sputtering Pressure on Electrical Resistivity and Elastic Wave Propagation in Oriented Columnar Tungsten Thin Films

et al. 2020

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“…However, studies on the stress evolution in thin films deposited at off-normal conditions remain scarce [8,59,60]. Siad et al [8] have reported a critical angle of α ~ 60° above which the absolute stress magnitude decreases for Al, Ti, and Cr films. They attributed this change to self-shadowing effect and decrease of average energy of incoming particles.…”

Section: Stress Evolutionmentioning

confidence: 99%

“…Most studies on films produced with obliquely incident vapor flux have concerned metals and oxides [4], which were primarily synthesized at low temperature and low deposited energy (typically by thermal and electron beam evaporation) to benefit from exacerbated shadowing effects [6]. Combining oblique angle geometries and sputter-deposition technique provides additional degree of freedom to adjust the film morphological features (porosity and column tilt angle) and stoichiometry by varying the deposition pressure or target power [7][8][9][10][11] and employing more than one material source [12][13][14][15]. However, studies on transition metal nitride (TMN) films produced at OAD or GLAD conditions remain relatively underexplored [16][17][18][19][20][21].…”

Section: Introductionmentioning

confidence: 99%

Texture and Stress Evolution in HfN Films Sputter-Deposited at Oblique Angles

et al. 2019

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In this study, polycrystalline hafnium nitride (HfN) thin films were grown by oblique angle deposition (OAD) technique to investigate the relationship between column tilt angle, texture development and residual stress evolution with varying inclination angle α of the substrate. The films (~1 μm thickness) were grown at various angles (α = 5°, 25°, 35°, 65°, 75°, and 85°) with respect to the substrate normal by reactive magnetron sputtering at 0.3 Pa and 300 °C. The film morphology, crystal structure and residual stress state were characterized by scanning electron microscopy and X-ray diffraction (XRD), including pole figure and sin2ψ measurements. All HfN films had a cubic, NaCl-type crystal structure with an [111] out-of-plane orientation and exhibited a biaxial texture for α ≥ 35°. XRD pole figures reveal that the crystal habit of the grains consists of {100} facets constituting triangular-base pyramids, with a side and a corner facing the projection of the incoming particle flux (indicative of a double in-plane alignment). A columnar microstructure was formed for α ≥ 35°, with typical column widths of 100 nm. It is observed that the column tilt angle β increases monotonously for α ≥ 35°, reaching β = 34° at α = 85°. This variation at microscopic scale is correlated with the tilt angle of the (111) crystallographic planes, changing from −24.8 to 11.3° with respect to the substrate surface. The residual stress changes from strongly compressive (~−5 GPa at α = 5°) to negligible or slightly tensile for α ≥ 35°. The observed trends are compared to previous works of the literature and discussed based on existing crystal growth and stress models, as well as in light of energy and angular distribution of the incident particle flux calculated by Monte Carlo. Importantly, a decrease of the average kinetic energy of Hf particles from 22.4 to 17.7 eV is found with increasing α due to an increase number of collisions.

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“…From the initial conditions of sputtered atoms 11 , the particles trajectories are described individually. As a result, the software reports the energy and the incident angle 12,13 of atoms hitting a surface, as well the fraction of deposited atoms in any surface 14 , including the target 15 .…”

Section: Introductionmentioning

confidence: 99%

Shifts in average energy of deposited atoms by magnetron sputtering through modifications in anode geometry: a simulation study

Karnopp

Sagás

2018

RBAV

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The deposition of titanium and gadolinium films by magnetron sputtering was simulated by using software SiMTra. The main goal is to analyze the average energy of deposited atoms as a function of argon pressure at different anode geometries. Two different anode configurations were used: a grid inserted between the target and the substrate, in the so-called grid-assisted magnetron sputtering, and a disk with different apertures. In the case of grid anode, simulations were also performed with a shutter in front of the substrate. The presence of the grid increases the average energy of atoms arriving at the substrate for pressures in the range between 1.0 and 8.0 Pa. The disk anode also changes the average energy, but such effect depends on the size of aperture.

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Critical angles in DC magnetron glad thin films

Cited by 45 publications

References 60 publications

Influence of Thickness and Sputtering Pressure on Electrical Resistivity and Elastic Wave Propagation in Oriented Columnar Tungsten Thin Films

Influence of Thickness and Sputtering Pressure on Electrical Resistivity and Elastic Wave Propagation in Oriented Columnar Tungsten Thin Films

Texture and Stress Evolution in HfN Films Sputter-Deposited at Oblique Angles

Shifts in average energy of deposited atoms by magnetron sputtering through modifications in anode geometry: a simulation study

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