Pulsed Gate Switching of MoS<sub>2</sub> Field‐Effect Transistor Based on Flexible Polyimide Substrate for Ultrasonic Detectors

Naqi, Muhammad; Kim, Bosung; Kim, Sang Woo; Kim, Sunkook

doi:10.1002/adfm.202007389

Cited by 21 publications

(19 citation statements)

References 31 publications

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“…Such detector is highly sensitive (Fig. 57g) to the ultrasound wave by shifting threshold voltage, showing pulsed gate switching 1474 . Besides, TMDs are layered materials with big surface area, attracting a lot of attention in flexible capacitive energy storage, such as battery 1489,1490 and supercapacitors 1280,1491 .…”

Section: Flexible Electronicsmentioning

confidence: 99%

Recent Progress on Two-Dimensional Materials

Chang¹,

Chen²,

Chen³

et al. 2021

Acta Physico Chimica Sinica

310

119

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Research on two-dimensional (2D) materials has been explosively increasing in last seventeen years in varying subjects including condensed matter physics, electronic engineering, materials science, and chemistry since the mechanical exfoliation of graphene in 2004. Starting from graphene, 2D materials now have become a big family with numerous members and diverse categories. The unique structural features and physicochemical properties of 2D materials make them one class of the most appealing candidates for a wide range of potential applications.In particular, we have seen some major breakthroughs made in the field of 2D materials in last five years not only in developing novel synthetic methods and exploring new structures/properties but also in identifying innovative applications and pushing forward commercialisation. In this review, we provide a critical summary on the recent progress made in the field of 2D materials with a particular focus on last five years. After a brief background 物理化学学报 Acta Phys. -Chim. Sin. 2021, 37 (12), 2108017 (3 of 151) introduction, we first discuss the major synthetic methods for 2D materials, including the mechanical exfoliation, liquid exfoliation, vapor phase deposition, and wet-chemical synthesis as well as phase engineering of 2D materials belonging to the field of phase engineering of nanomaterials (PEN). We then introduce the superconducting/optical/magnetic properties and chirality of 2D materials along with newly emerging magic angle 2D superlattices. Following that, the promising applications of 2D materials in electronics, optoelectronics, catalysis, energy storage, solar cells, biomedicine, sensors, environments, etc. are described sequentially. Thereafter, we present the theoretic calculations and simulations of 2D materials. Finally, after concluding the current progress, we provide some personal discussions on the existing challenges and future outlooks in this rapidly developing field.

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Section: Flexible Electronicsmentioning

confidence: 99%

Recent Progress on Two-Dimensional Materials

Chang¹,

Chen²,

Chen³

et al. 2021

Acta Physico Chimica Sinica

310

119

View full text Add to dashboard Cite

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“…The applied mechanical stress lies onto the entire area of the proposed flexible TeNWs/Te FET array as the 100 um thick PET film is laminated on the backside of the PI layer, attributing to analyze the mechanical stability under complex conditions. [ 51 ] Figure 5a defines the transfer curves of the proposed TeNWs/Te FET device at different bending cycles up to 2000 cycles (having a bending radius of 5 mm) along with a static state. The results show unchangeable behavior at different bending cycles in comparison to the static condition.…”

Section: Resultsmentioning

confidence: 99%

Flexible Platform Oriented: Unipolar‐Type Hybrid Dual‐Channel Scalable Field‐Effect Phototransistors Array Based on Tellurium Nanowires and Tellurium‐Film with Highly Linear Photoresponsivity

Naqi

Choi

Cho

et al. 2022

Adv Elect Materials

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of applications, such as flexible displays, image sensors, biomedical actuators, and touch panels, due to their good mechanical robustness properties and excellent compatibility of high integration processes. [1][2][3][4][5][6] Over the years, specifically p-type based FETs such as organic, oxide, and 2D semiconductor materials, extensive studies have been investigated to develop good electrical performance such as high carrier mobility and excellent on-off current ratio with chemically and physically stable material properties but are still limited in exploring on a larger scale with expandable applications, micro-scale fabrication, low-temperature processing, and flexibility. [7][8][9][10][11][12] To fully explore the largescale flexible platform-oriented FETs, the p-type semiconductor requires easy and effective processing techniques with temperature independency and expandable applicability in the field of electronics.Tellurium (Te), as a semiconductor material, has recently gained substantial interest due to its favorable properties such as excellent photoconductivity, good piezoelectricity, and high transport properties. [13][14][15][16][17][18][19] Concerning the Te structural properties, it has a strong anisotropic property which endows it to form 1D nanostructure (i.e., nanowires, nanorods, and nanotubes) along its c-axis. [20][21][22][23][24][25][26][27][28] Moreover, Te endures a trigonal atomic structure with strong van der Waals bonding to its neighboring atoms and forms a helical chain of atoms. [29][30][31][32] In recent, based on the 1D nanostructure of Te semiconductor, various studies have been reported to obtain high electrical properties but are limited in terms of stabilization and uniformity of the film synthesis and scalable fabrication. [33][34][35][36] Due to the curly shape of atomic chains of 1D Te nanostructure, the large-scale synthesis with high uniformity and stability is quite sensitive for fieldeffect transistors (FETs) fabrication with extensive applicability. In this regard, various strategies have successfully been demonstrated to enhance the electrical performance of atomic helical chain-type Te nanostructures-based FET devices through encapsulation methods of CNTs and boron nitride nanotubes (BNNTs), [33][34][35]37] but are still limited in terms of expanding Here, a novel method is introduced to synthesize the uniform hybrid structure of tellurium nanowires (TeNWs) and tellurium-film (Te-film) for flexible fieldeffect transistor (FET) array device to exhibit excellent electrical, mechanical, and optical performance. To fabricate such a device, all the processes are performed at low temperatures (< 100 °C) with easy processing methods. The uniformity of the hybrid structure of TeNWs/Te-film is confirmed using scanning electron microscopy (SEM) and Raman spectroscopy with a comparison of the bare TeNWs-film. Electrical properties of the TeNWs/ Te-based FET device exhibits high mobility of 5.35 cm 2 V −1 s −1 and on/off ratio of >10 4 along with stable and uniform results of th...

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“…When optimized stress is applied, the indirect/ direct bandgap transition of MoS 2 can be initiated, resulting in the change of the photocurrent. Naqi et al 227 proposed a MoS 2 TFT for ultrasonic detection. The TFT shows a high on/off ratio of 10 5 and outstanding switching characteristics over 10 to 500 kHz.…”

Section: Thin Lm Transistors (Tfts)mentioning

confidence: 99%