Pulse generation at 346 GHz using a passively mode locked quantum-dash-based laser at 1.55 μm

Merghem, K.; Akrout, Akram; Martinez, A.; Aubin, G.; Ramdane, A.; Lelarge, F.; Duan, G.-H.

doi:10.1063/1.3070544

Cited by 80 publications

(41 citation statements)

References 9 publications

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“…The high modal gain of Qdash lasers, corroborated via lasing from very short cavity lasers, has demonstrated in various reports [5,26,207,244]. In particular, a 120 µm cavity exhibiting lasing with highest exhibited slope efficiency of 0.5 W/A was reported by Merghem et al [245]. The 2×120 µm 2 …”

Section: Inas/ingaasp Materials Systemmentioning

confidence: 82%

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Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

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The advances in lasers, electronic and photonic integrated circuits (EPIC), optical interconnects as well as the modulation techniques allow the present day society to embrace the convenience of broadband, high speed internet and mobile network connectivity. However, the steep increase in energy demand and bandwidth requirement calls for further innovation in ultra-compact EPIC technologies. In the optical domain, innovation in the laser technologies beyond the current quantum well (Qwell) based laser technologies are already taking place and presenting very promising results. Homogeneously grown quantum dot (Qdot) lasers, can serve in the future energy saving information and communication technologies (ICT) as the work-horse for transmitting information through optical fiber. The encouraging results in the zero-dimensional (0D) structures emitting at 980 nm, in the form of vertical cavity surface emitting laser (VCSEL), are already operational at low threshold current density and capable of 40 Gbps error-free transmission at 108 fJ/bit. Eventual achievements for lasers operating in the O-, C-, L-, U-bands, and beyond will eventually lay the foundation for green ICT. On the hand, the inhomogeneously grown quasi 0D quantum dash (Qdash) lasers are brilliant solutions for potential broadband connectivity in server farms or access network. A single broadband Qdash laser operating in the stimulated emission mode can replace tens of discrete narrow-band lasers in dense wavelength division multiplexing (DWDM) transmission thereby further saving energy, cost and footprint. In this article, we review the progress of both Qdots and Qdash devices based on the InAs/InGaAlAs/InP and InAs/InGaAsP/InP material systems, from the angles of growth and device performance.2

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Section: Inas/ingaasp Materials Systemmentioning

confidence: 82%

“…42(b). In terms of highest repetition rate, Merghem et al [245] reported a record 346 GHz pulse generation (see Fig. 42(c)) using a passively mode-locked 120 µm long Qdash laser emitting ~560 fs deconvolved pulses with 20 mW peak power and 9 dB extinction ratio.…”

Section: Self-pulsationmentioning

confidence: 99%

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

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“…Due to the broadband gain [5] and fast carrier dynamics [6] of QDs, the resulting lasers are excellent candidates for mode-locking, capable of generating optical pulses with pulse durations down to 312 fs [7] and high repetition rates up to 346 GHz [8]. In order to scale the repetition rate up to the THz range using conventional cavity geometries, the length of the optical cavity must be shrunk to less than 50 μm.…”

Section: Introductionmentioning

confidence: 99%

THz optical pulses from a coupled-cavity quantum-dot laser

Liu

Lü

Poole

et al. 2012

Optics Communications

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Optical pulses are generated from a coupled-cavity quantum-dot (QD) laser consisting of a short QD-waveguide Fabry-Perot (F-P) cavity and three long external fiber Bragg grating (FBG) cavities. When the laser is biased at low operation current, the feedback from the external cavities dominates and laser pulses have a 1.01 THz repetition rate, determined by the equal frequency difference of the three FBGs. We are thus able to decouple the repetition rate of a mode-locked laser from the cavity length. With much higher bias current, the QD F-P cavity dominates and the repetition rate is switched to 43.8 GHz, defined by the length of the F-Pcavity.Crown

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“…In recent years, the wide gain bandwidth of certain self-assembled gain materials has enabled sub-picosecond and femtosecond pulsewidths to be obtained [3][4][5]. In parallel, various techniques such as colliding pulse mode-locking (CPML) and harmonic mode-locking have been adapted for diode lasers that allow higher repetition rates to be achieved while avoiding the lower average power associated with short device lengths [1].…”

mentioning

confidence: 99%

Passive harmonic mode locking by mode selection in Fabry–Perot diode lasers with patterned effective index

2010

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We demonstrate passive harmonic mode-locking of a quantum well laser diode designed to support a discrete comb of Fabry-Perot modes. Spectral filtering of the mode spectrum was achieved using a non-periodic patterning of the cavity effective index. By selecting six modes spaced at twice the fundamental mode spacing, near-transform limited pulsed output with 2 ps pulse duration was obtained at a repetition rate of 100 GHz.The generation of high power, ultrashort optical pulses using mode-locked diode lasers is of considerable importance across a range of applications in optical communication systems and data processing [1,2]. In recent years, the wide gain bandwidth of certain self-assembled gain materials has enabled sub-picosecond and femtosecond pulsewidths to be obtained [3][4][5]. In parallel, various techniques such as colliding pulse mode-locking (CPML) and harmonic mode-locking have been adapted for diode lasers that allow higher repetition rates to be achieved while avoiding the lower average power associated with short device lengths [1].CPML places the saturable absorber section at the center of the cavity. Two counterpropagating pulses are formed and collide at the center. In this way the saturation of the absorption is enhanced and the repetition rate is simultaneously doubled from the fundamental [6]. Harmonic mode-locking of diode lasers can be achieved by forcing the device to lock on a set of equally spaced but non-adjacent cavity modes. With this approach, terahertz (THz) repetition rates have been achieved in devices that incorporate distributed Bragg reflector mirrors [7] and intra-cavity reflectors [8]. A limitation of these approaches to harmonic mode-locking however is the fact that only the harmonic frequency rather than the precise form of the mode-locked spectrum itself can be specified.In this letter we demonstrate an approach to passive mode-locking of diode lasers based on the selection of individual modes from the spectrum of Fabry-Perot resonances. Mode selection is achieved by a distributed reflection mechanism that is designed as a perturbation of the Fabry-Perot mode spectrum. Such an approach has some features in common with that described in [8], although, in our case the effective index profile along the device is derived directly from an inverse problem solution. This approach has allowed us to design singlemode [9], and two-mode Fabry-Perot diode lasers [10] with high spectral purity and can in principle provide a much greater degree of control of the mode-locked spectrum of the laser. To demonstrate passive mode-locking of a discrete comb of Fabry-Perot modes, a saturable absorber section is placed adjacent to one of the cavity mirrors. In the device we consider here, six primary modes are chosen with a spacing of two fundamental modes leading to mode-locking at the first harmonic of the cavity.We have shown that a set of self-consistent equations for the lasing modes can be found by making an expansion about the cavity resonance condition in a FabryPerot laser [11]. The ef...

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Pulse generation at 346 GHz using a passively mode locked quantum-dash-based laser at 1.55 μm

Abstract: We report on subpicosecond pulse generation at 346 GHz repetition rate based on InAs/InP quantum dash passively mode locked lasers emitting at 1.55 μm. This is achieved owing to the high optical modal gain of the multilayer InAs/InP quantum dash active region.

Cited by 80 publications

References 9 publications

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

THz optical pulses from a coupled-cavity quantum-dot laser

Passive harmonic mode locking by mode selection in Fabry–Perot diode lasers with patterned effective index

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