Pulse experiments on electroformed mim structures

Oxley, David; Thurstans, R.E.; Wild, P.C.

doi:10.1016/0040-6090(74)90030-3

Cited by 9 publications

(5 citation statements)

References 7 publications

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“…The important feature of the enhanced current under the application of pulsed bias is thus the on-off duty cycle of the pulsed voltage, a result confirmed experimentally by Oxley et al [3]. Finally, the re-application of a DC bias following pulse application reveals a current-voltage characteristic fully consistent with this explanation, i.e.…”

Section: Discussionsupporting

confidence: 73%

“…Our studies, and also those of Thurstans et al [7] and Oxley et al [3], have shown that the current changes, during switching in either direction, take place in a series of discontinuous steps. Further, a slightly different form of memory state may be induced by the application of voltage pulses of amplitude V p .…”

Section: Memory Phenomenasupporting

confidence: 79%

“…Hence the latter insulator is the one that has been used in our work to be described. Devices were constructed in the manner described previously by Oxley et al [3].…”

Section: Introductionmentioning

confidence: 99%

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The electroformed metal-insulator-metal structure: a comprehensive model

Thurstans

Oxley

2002

J. Phys. D: Appl. Phys.

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A new model is presented of the electroformed metal-insulator-metal structure which explains its various properties including electron emission, electroluminescence, memory effects and, for the first time, a complete account of the differential negative resistance. The model is based upon experiments which identify the conduction process to be trap-controlled thermally activated tunnelling between metal islands produced in the forming process. The implications for the production of commercial electroformed devices are discussed.

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Section: Discussionsupporting

confidence: 73%

Section: Memory Phenomenasupporting

confidence: 79%

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The electroformed metal-insulator-metal structure: a comprehensive model

Thurstans

Oxley

2002

J. Phys. D: Appl. Phys.

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“…Qualitatively similar electrical characteristics to those reported here have been observed previously, originally in electroformed inorganic films, [19][20][21][22][23] though most recently in 100 nm organic films ͓aluminum tris͑8-hydroxyquinoline͒ containing a thin layer of metallic nanoclusters 8 ͔. This high conductance per unit area is desirable for fast, low-noise data readouts in integrated circuit memory.…”

Section: Programmable Organic Thin-film Devices With Extremely High Csupporting

confidence: 86%

Programmable organic thin-film devices with extremely high current densities

Graves-Abe

Sturm

2005

Applied Physics Letters

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Thin (12nm) organic films consisting of self-assembled multilayers of 11-mercaptoundecanoic acid were contacted by gold electrodes. The devices could be operated as a programmable memory by applying low-voltage pulses to increase the conductivity by 103 and then high-voltage pulses to reverse the increase; the conductivity of the stored state could be read nondestructively by applying a still-lower voltage pulse. Programmed states remained stable for longer than three months and devices were functional for more than 104 programming cycles. Current-voltage measurements of the devices revealed negative differential resistance with enormous current densities characteristic of metallic conduction (up to 107A∕cm2). These results are promising for application in dense, high-speed memory arrays, where resistance-capacitance delays can be minimized by large current densities.

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Electro-formed characteristics of evaporated Mn/SiO thin cermet films

1986

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It has been conclusively demonstrated [1][2][3] that after electroforming, metal-insulator metal (MIM) sandwich structures undergo an increase in electrical conductivity by several orders of magnitude. A voltagecontrolled (or current-controlled) negative resistance, VCNR (or CCNR) is produced, and switching, electron emission, electro-luminescence and memory phenomena are observed. Switching [4 6] and electron emission [7,8] have also been observed to occur in planar discontinuous metallic films.Depending on composition, cermet thin films may possess three kinds of microstructure: metallic (continuous; positive temperature coefficient of resistance (TCR)); dielectric (discontinuous metal islands dispersed throughout a dielectric matrix; negative TCR); and transitional or intermediate (interconnected and randomly dispersed metal islands; negative TCR). Although a substantial amount of work has been carried out on the various properties of cermet films in the metallic and transitional microstructural regimes [9], relatively few investigations have commented on the d.c. and a.c. current-voltage characteristics of electro-formed cermet films in the dielectric regime. Thus the purpose of this letter is to present some results of studies for the Mn/SiO system with /> 80 wt % SiO.The metal-Mn/SiO-metal sandwich structures were prepared on conventionally cleaned Corning 7059 alkali-free substrates by single-boat evaporation in vacuo ~<0.5mPa at a deposition rate of 0.8 nm sec ~. In all cases the base electrode was aluminium and the counter-electrode was gold. The cermet thickness was monitored using a quartz crystal, but measured interferometrically for an accurate determination.Electroforming was investigated in vacuo ,-, 1 mPa. It was observed that the forming voltage, Vr, for all compositions studied (80 to 95 wt % SiO) lay between 1.0 and 5.0 V and the voltage, Vmax, corresponding to the peak current, Icm,x' was between 3.0 and 7.0 V. In all electro-formed samples the circulating current, Ic, was observed to be about four decades higher than the corresponding pre-formed structures. However, both Icm,x and Vf were found to decrease as the cermet thickness increased (up to the maximum value of 300 nm investigated). The slow decrease in Vr with increase in thickness probably occurs because the metallic islands increase in size and the inter-island separation decreases -both factors should aid filament formation. However, unlike SiOx in which Vf is independent of thickness up to a maximum value of 600 nm [10], electro-forming in Mn/SiO cermet films is not strictly voltage-controlled because it is also temperature dependent between -1 1 0 and 280°C. A comprehensive discussion of the parametric dependence of the electro-forming process in MIM structures on insulator thickness, environment and impurity content has been reviewed by Ray and Hogarth [11]. Fig. 1 illustrates that as the potential difference is increased above Vm,x, Ic decreases rapidly by one to two decades and then either continues to decrease before suddenly...

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Pulse experiments on electroformed mim structures

Cited by 9 publications

References 7 publications

The electroformed metal-insulator-metal structure: a comprehensive model

The electroformed metal-insulator-metal structure: a comprehensive model

Programmable organic thin-film devices with extremely high current densities

Electro-formed characteristics of evaporated Mn/SiO thin cermet films

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