Publisher’s Note: “SnS2/Si nanowire vertical heterostructure for high performance ultra-low power broadband photodetector with excellent detectivity” [J. Appl. Phys. 129, 053105 (2021)]

A synergistic heterojunction of SnS2/SnSSe nanosheets on GaN for advanced self-powered photodetectors

“…S3(b). 45 The PL spectrum of the SnS 2 and SnSSe mixed samples under 375 nm excitation, as depicted in ESI, † Fig. S3(e), revealed significant quenching of the PL emission in the case of the mixed solution, suggesting the suppression of radiative recombination of photoinduced charge carriers by interfacial charge transfer between SnSSe and SnS 2 nanosheets.…”

Geometry-asymmetric photodetectors from metal–semiconductor–metal van der Waals heterostructures

“…On the other hand, SnS 2 NPs show n-type polarity. 33,[51][52][53][54][55][56] The electron affinity and bandgap of SnS 2 NPs are 4.2 eV and 2.7-3.3 eV, 33,53,54 while the electron affinity and bandgap of SnS are 4.0 eV and 1.2 eV. Thus, for NP-NS hybrid films, due to the carrier concentration gradient, the hole carriers from p-SnS NS diffuse into n-SnS 2 NPs, and electrons diffuse from n-SnS 2 NPs into p-SnS NSs, forming space charge regions at the interfaces and reducing the concentration of free carriers in SnS NSs due to charge carrier recombination.…”