Geometry-asymmetric photodetectors from metal–semiconductor–metal van der Waals heterostructures

Fu, Xiao; Li, Tangxin; Li, Qing; Hao, Chunhui; Zhang, Lei; Fu, Dejun; Wang, Jinjin; Xu, Hangyu; Yuan, Gu; Zhong, Fang; He, Ting; Zhang, Kun; Panin, G. N.; Lü, Wei; Miao, Jinshui; Hu, Weida

doi:10.1039/d2mh00872f

Cited by 7 publications

(6 citation statements)

References 73 publications

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“…While the P increases from 15.07 to 144.2 mW/cm 2 , α is fitted to be 0.72 (<1). The sublinear behavior indicates the trapped centers are filled by the continuously generated photocarriers and the recombination probability of photogenerated carriers increases, which can be seen in other p–n and asymmetric photodiodes. − , Theoretically, the β value can be divided into two categories: β = 1 represents monomolecular recombination (Shockley–Read–Hall recombination) and β = 2 corresponds to bimolecular recombination (Langevin). The β value in our ReSe 2 Schottky device is calculated to be 1.06 (close to 1), indicating that the Shockley–Read–Hall recombination caused by deep levels and surface dangling bonds plays a crucial role. , V OC reaches its maximum value of 0.14 V at P = 45.36 mW/cm 2 .…”

Section: Resultsmentioning

confidence: 99%

Polarization-Sensitive Self-Powered Schottky Photodetector with High Photovoltaic Performance Induced by Geometry-Asymmetric Contacts

Liu,

Zheng,

Shu

et al. 2024

ACS Appl. Mater. Interfaces

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Polarization-sensitive photodetectors have attracted considerable attention owing to their potential application prospects in navigation, optical switching, and communication. However, it remains challenging to develop a facile and effective strategy to simultaneously meet the demands of low power consumption, high performance, and excellent polarization sensitivity. Herein, a series of low-symmetry two-dimensional (2D) ReSe 2 Schottky photodetectors with geometry-asymmetric contacts are constructed. These devices exhibit excellent photoelectrical performance and impressive polarization sensitivity in the self-powered mode owing to the difference in the Schottky barrier height induced by the asymmetric contact areas, interfacial states, and thickness difference. Particularly, an outstanding responsivity of 379 mA/W, a decent specific detectivity of 6.8 × 10 11 Jones, and a high light on/off ratio (I light /I dark ) of over 10 5 under 635 nm light illumination are achieved. Scanning photocurrent mapping (SPCM) measurements further confirm that the ReSe 2 /drain overlapped region (corresponding to the smaller contact area side) with a higher Schottky barrier height plays a dominant role in the generation of photocurrent. Furthermore, the proposed device displays impressive polarization ratios (PRs) of 3.1 and 3.6 at zero bias under 635 and 808 nm irradiation, respectively. The high-resolution single-pixel imaging capability is also demonstrated. This work reveals the great potential of the ReSe 2 Schottky photodetector with geometry-asymmetric contacts for high-performance, self-powered, and polarization-sensitive photodetection.

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Section: Resultsmentioning

confidence: 99%

Polarization-Sensitive Self-Powered Schottky Photodetector with High Photovoltaic Performance Induced by Geometry-Asymmetric Contacts

Liu,

Zheng,

Shu

et al. 2024

ACS Appl. Mater. Interfaces

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“…2d and e . As the effective contact size increases (decreases), the resistance of the corresponding diode decreases (increases), and we simplify this change by the diode size 47 . The dark current is symmetric with a symmetrical oxidation degree of cathode and anode as shown in the black curve in Fig.…”

Section: Discussionmentioning

confidence: 99%

“…2d and e. As the effective contact size increases (decreases), the resistance of the corresponding diode decreases (increases), and we simplify this change by the diode size 47 opposite polarity (top current density plot in Fig. 2f and g) under illumination.…”

Section: Discussionmentioning

confidence: 99%

Graphene/MoS2−xOx/graphene photomemristor with tunable non-volatile responsivities for neuromorphic vision processing

Cai

et al. 2023

Light Sci Appl

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Conventional artificial intelligence (AI) machine vision technology, based on the von Neumann architecture, uses separate sensing, computing, and storage units to process huge amounts of vision data generated in sensory terminals. The frequent movement of redundant data between sensors, processors and memory, however, results in high-power consumption and latency. A more efficient approach is to offload some of the memory and computational tasks to sensor elements that can perceive and process the optical signal simultaneously. Here, we proposed a non-volatile photomemristor, in which the reconfigurable responsivity can be modulated by the charge and/or photon flux through it and further stored in the device. The non-volatile photomemristor has a simple two-terminal architecture, in which photoexcited carriers and oxygen-related ions are coupled, leading to a displaced and pinched hysteresis in the current-voltage characteristics. For the first time, non-volatile photomemristors implement computationally complete logic with photoresponse-stateful operations, for which the same photomemristor serves as both a logic gate and memory, using photoresponse as a physical state variable instead of light, voltage and memresistance. The polarity reversal of photomemristors shows great potential for in-memory sensing and computing with feature extraction and image recognition for neuromorphic vision.

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“…This paper mainly summarizes the current gas detection methods commonly used to detect CO, CO 2 , and CH 4 , comparing the feature of common gas sensors, including catalytic combustion gas sensors, semiconductor gas sensors, electrochemical gas sensors, and infrared gas sensors, focusing on the detection principles based on infrared absorption spectroscopy and the advantages. The development of nanostructured devices is introduced, mainly discussing 0D, 1D, 2D, and special structured nanophotonic devices [8], [9] applied to infrared gas detection, highlighting the advantages of nanostructured devices in the direction of gas detection, and providing new ideas for the future development of miniaturized and high-precision gas sensors.…”

Section: Introductionmentioning

confidence: 99%

Greenhouse Gas Detection Based on Infrared Nanophotonic Devices

Hao

Jiang

et al. 2023

IEEE Open J. Nanotechnol.

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Most greenhouse gases come from biological activities and industry which will lead to global warming and show an impact on human life. With the need of green transformation of the global economic structure and seeking for higher quality of human life, the detection and management of greenhouse gases, as well as most hazardous gases in the environment, are increasingly demanding. Applications in different fields require sensors that can detect gas volume fractions with magnitudes from 10-9 to 10-4. Greenhouse gas detection plays an important role both in the agriculture and industry field. In this review, we first summarize the mechanism of several common gas detectors used currently. Then, the advantages of nanostructured gas sensors are discussed. Finally, the applications of infrared gas sensors based on nanophotonic devices are described in detail. This review has been an outlook on the future development of infrared gas sensors based on nanophotonic devices.INDEX TERMS Environment and climate, greenhouse gas, nanostructures, photonic device.

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Geometry-asymmetric photodetectors from metal–semiconductor–metal van der Waals heterostructures

Abstract: The functional diversity of two-dimensional (2D) material devices with simple architectures is ultimately be limited by immature doping techniques. Another alternative is geometry-asymmetric metal-semiconductor-metal structure (GA-MSM), which enables basic function...

Cited by 7 publications

References 73 publications

Polarization-Sensitive Self-Powered Schottky Photodetector with High Photovoltaic Performance Induced by Geometry-Asymmetric Contacts

Polarization-Sensitive Self-Powered Schottky Photodetector with High Photovoltaic Performance Induced by Geometry-Asymmetric Contacts

Graphene/MoS2−xOx/graphene photomemristor with tunable non-volatile responsivities for neuromorphic vision processing

Greenhouse Gas Detection Based on Infrared Nanophotonic Devices

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