PtSi Schottky-barrier infared focal plane arrays

Abstract

PtSi Schottky-barrier (SB) FPAs have been developed for ground-based thermal imaging and spaceborne remote sensing applications, making the best possible use of its process compatibility with Si LSIs. The FPAs for mid wavelength infrared (MWIR: 3 -5 jim) thermal imaging are large format 2-D arrays with several array sizes up to 1040x1040. An original readout architecture called the Charge Sweep Device (CSD) has contributed to enhancing their sensitivities, and our stateof-the-art technology has reached a level which realizes FPAs with NETDs of the order of 30 mK. Extending the SB FPA technology to the short wavelength infrared (SWIR: 1 -3 jim) spectral region has made it possible to exploit spaceborne remote sensing applications. The space-grade performance and reliability have been demonstrated with a 4096 element and 2100 element linear FPAs.

Integrable Near-Infrared Photodetectors Based on Hybrid Erbium/Silicon Junctions

“…In addition, Er can be deposited by sputtering at low temperature without compromising an eventually pre-existent electronic circuitry. On the other hand, sputtered Er deposited on Si has already shown the capability to form Schottky junctions [18] that have been widely employed in both infrared and NIR detection [19][20][21][22][23].…”

Recent Advances in Silicon Photodetectors Based on the Internal Photoemission Effect

“…After these research processes, IPE-based Si PDs show the potentialities to compare favorably with Ge-based devices, while also offering new advantageous characteristics. Indeed, IPEbased PDs are very fast thanks to the unipolar nature of the Schottky junction, and they have already shown the capability to be monolithically integrated with Si-based charge coupled devices for infrared applications [24]. IPE-based Si PDs were already summarized in a previous work of some years ago [25].…”

Silicon photodetectors based on internal photoemission effect: The challenge of detecting near infrared light

“…In the case of the 10 µm IrSi Schottky-barrier detectors, the IrSi was formed by in situ vacuum annealing and the unreacted Ir was removed by reactive ion etching. The progress of the Schottky-barrier FPA technology has been constant (Kimata et al, 1998). At the present time Schottky-barrier FPAs represent the most advanced FPAs technology for medium wavelength applications (see Table 1).…”

“…9). show the potential diagrams in the integration and readout operations, respectively (Kimata, 1995(Kimata, , 1998. Reprinted with permission from M. Kimata, "PtSi Schottky-barrier infrared focal plane arrays," OptoElectronics Review, 6, 1, 1998.…”

“…The pixel was constructed with 1.5 µm Table 2. Specifications and performance of 2-D PtSi Schottky-barrier FPAs with CSD readout (Kimata, 1998). Reprinted with permission from M. Kimata, "PtSi Schottky-barrier infrared focal plane arrays," Opto-Electronics Review, 6, 1, 1998.…”