Silicon photodetectors based on internal photoemission effect: The challenge of detecting near infrared light

Casalino, Maurizio; Coppola, Giuseppe; Iodice, Mario; Rendina, Ivo; Sassi, Ugo; Lombardo, Antonio; Milana, Silvia; Sundaram, Ramesh; Ferrari, A.; Sirleto, L.

doi:10.1109/icton.2014.6876538

Cited by 7 publications

(3 citation statements)

References 33 publications

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“…Extracting energetic carriers from light absorption in so-called hot carrier Schottky barrier (SB) junctions has attracted enormous attention, as it allows harvesting low photon energies that have so far been omitted from semiconductor photodetectors. − Since metals offer zero bandgap energy, their operation can in principle cover visible, mid-infrared, terahertz, and microwave regimes, which holds great promises for gas detection, , imaging sensors, wavelength determination, , power monitoring, and sustainable power supplies. − Taking silicon photodetectors (with a bandgap energy of 1.1 eV) for instance, exploitation of SB devices can result in a highly integrated CMOS-compatible and inexpensive alternative to commercially used germanium (Ge) and gallium arsenide (GaAs) photodetectors at telecommunication wavelengths. − ,− , SB junctions consist of a metal–semiconductor (SC) contact where the difference in the work function of both materials leads to an energy band bending at the interface due to Fermi energy alignment on both sides via charge carrier diffusion and generation currents . However, this holds true only when the dipole at the interface generated by surface defects is not taken into consideration.…”

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confidence: 99%

TiO_2–x-Enhanced IR Hot Carrier Based Photodetection in Metal Thin Film–Si Junctions

Güsken

Lauri

et al. 2019

ACS Photonics

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We investigate titanium nitride (TiN) thin film coatings on silicon for CMOS-compatible sub-bandgap charge separation upon incident illumination, which is a key feature in the vast field of on-chip photodetection and related integrated photonic devices. Titanium nitride of tunable oxidation distributions serves as an adjustable broadband light absorber with high mechanical robustness and strong chemical resistivity. Backside-illuminated TiN on p-type Si (pSi) constitutes a self-powered and refractory alternative for photodetection, providing a photoresponsivity of about ∼1 mA/W at 1250 nm and zero bias while outperforming conventional metal coatings such as gold (Au). Our study discloses that the enhanced photoresponse of TiN/pSi in the near-infrared spectral range is directly linked to trap states in an ultrathin TiO2–x interfacial interlayer that forms between TiN and Si. We show that a pSi substrate in conjunction with a few nanometer thick amorphous TiO2–x film can serve as a platform for photocurrent enhancement of various other metals such as Au and Ti. Moreover, the photoresponse of Au on a TiO2–x /pSi platform can be increased to about 4 mA/W under 0.45 V reverse bias at 1250 nm, allowing for controlled photoswitching. A clear deviation from the typically assumed Fowler-like response is observed, and an alternative mechanism is proposed to account for the metal/semiconductor TiO2–x interlayer, capable of facilitating hole transport.

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confidence: 99%

TiO_2–x-Enhanced IR Hot Carrier Based Photodetection in Metal Thin Film–Si Junctions

Güsken

Lauri

et al. 2019

ACS Photonics

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“…However, this theory does not take the thickness of the Schottky metal layer into consideration. Over the years the original theory of IPE has been refined largely resulting in much better assessment of the performance of the devices based on this effect [27,28].…”

Section: Photodetection Mechanisms In 2d Materialsmentioning

confidence: 99%

Photo-Detectors Based on Two Dimensional Materials

Kharadi¹,

Malik²,

Khanday³

2021

Photodetectors [Working Title]

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2D materials like transition metal dichalcogenides, black phosphorous, silicene, graphene are at the forefront of being the most potent 2D materials for optoelectronic applications because of their exceptional properties. Several application-specific photodetectors based on 2D materials have been designed and manufactured due to a wide range and layer-dependent bandgaps. Different 2D materials stacked together give rise to many surprising electronic and optoelectronic phenomena of the junctions based on 2D materials. This has resulted in a lot of popularity of 2D heterostructures as compared to the original 2D materials. This chapter presents the progress of optoelectronic devices (photodetectors) based on 2D materials and their heterostructures.

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“…Several new structures have been reported in literature combining, for example, IPA with nanoscale metallic structures, comprising Si nanoparticles (NPs) [ 39 ], metal stripes allowing surface plasmon polaritons (SPPs) [ 40 , 41 ], metallic gratings [ 42 ] and new structures based on two-dimensional materials (like graphene) capable to substitute metal in the Schottky junction [ 43 ]. Moreover, as reported in some complete review on this topic [ 44 , 45 ], due to the unipolar nature of the Schottky junction, IPE based PDs are very fast and can be monolithically integrated with Si-based CCD for IR applications [ 46 ].…”

Section: Group IV Semiconductorsmentioning

confidence: 99%

Integrated Photodetectors Based on Group IV and Colloidal Semiconductors: Current State of Affairs

Dardano

Ferrara

2020

Micromachines

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With the aim to take advantage from the existing technologies in microelectronics, photodetectors should be realized with materials compatible with them ensuring, at the same time, good performance. Although great efforts are made to search for new materials that can enhance performance, photodetector (PD) based on them results often expensive and difficult to integrate with standard technologies for microelectronics. For this reason, the group IV semiconductors, which are currently the main materials for electronic and optoelectronic devices fabrication, are here reviewed for their applications in light sensing. Moreover, as new materials compatible with existing manufacturing technologies, PD based on colloidal semiconductor are revised. This work is particularly focused on developments in this area over the past 5–10 years, thus drawing a line for future research.

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Silicon photodetectors based on internal photoemission effect: The challenge of detecting near infrared light

Cited by 7 publications

References 33 publications

TiO_2–x-Enhanced IR Hot Carrier Based Photodetection in Metal Thin Film–Si Junctions

TiO_2–x-Enhanced IR Hot Carrier Based Photodetection in Metal Thin Film–Si Junctions

Photo-Detectors Based on Two Dimensional Materials

Integrated Photodetectors Based on Group IV and Colloidal Semiconductors: Current State of Affairs

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Silicon photodetectors based on internal photoemission effect: The challenge of detecting near infrared light

Cited by 7 publications

References 33 publications

TiO2–x-Enhanced IR Hot Carrier Based Photodetection in Metal Thin Film–Si Junctions

TiO2–x-Enhanced IR Hot Carrier Based Photodetection in Metal Thin Film–Si Junctions

Photo-Detectors Based on Two Dimensional Materials

Integrated Photodetectors Based on Group IV and Colloidal Semiconductors: Current State of Affairs

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Product

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TiO_2–x-Enhanced IR Hot Carrier Based Photodetection in Metal Thin Film–Si Junctions

TiO_2–x-Enhanced IR Hot Carrier Based Photodetection in Metal Thin Film–Si Junctions