PSP-SOI: An advanced surface potential based compact model of partially depleted SOI MOSFETs for circuit simulations

Surface-potential-based compact modeling of dynamically depleted SOI MOSFETs

“…It has been also performed with positive results identical to those presented in [8] for PSP-SOI PD.…”

“…The new model presented in this work inherits all features and qualitative behavior of the PSP-SOI PD and of the industry standard PSP model while adding the ability to faithfully reproduce the DD effects. The small geometry effects are included as in [6,7], nonlinear body resistance model of bodycontacted devices is the same as in [8,38] and the self-heating is modeled as in [39]. Furthermore, the PSP-SOI DD model is capable of modeling FD-SOI devices which can be regarded as a special case of the general DD-SOI devices.…”

“…The surface-potential-based approach, which has emerged as the mainstream of the compact modeling for both bulk [6,7] and PD-SOI [8,9] devices, has been already introduced for the DD-SOI in [3,[10][11][12]. It starts from the first integral of Poisson's equation in the channel region.…”

“…To obtain such expressions, a new symmetric linearization method is developed specifically for DD-SOI MOSFETs. This allows us to formulate the model within the context of the PSP and PSP-SOI PD models [7,16,8] but with DD effects included. Hence the secondary effects can be adopted into the DD-SOI model as in [7,8].…”

“…The form of Hðx; D n Þ given by (8) includes the conditioning of the region near x ¼ 0 compensating for the spatial variation of the electron imref in the vertical direction which was neglected while integrating (1). This subject has been considered at length in [14,13,15].…”