Proximity Injection of Plasticizing Molecules to Self-Assembling Polymers for Large-Area, Ultrafast Nanopatterning in the Sub-10-nm Regime

Jeong, Jae Won; Hur, Yoon Hyung; Kim, Hyeong-jun; Kim, Jong Min; Park, Woon Ik; Kim, Mi Jeong; Kim, Bumjoon J.; Jung, Yeon Sik

doi:10.1021/nn401611z

Cited by 70 publications

(87 citation statements)

References 59 publications

(116 reference statements)

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“…Comparison between the defect density evolution on flat substrates in RTP treated samples and data obtained by other methods on pre-patterned substrates suggests that further reduction of defects could be obtained by RTP processing of DBC films confined in topographically defined structures. However, it is worth to note that even in the best case, the defects density is 0.2 defects μm −2 [88] which is much higher than the limit indicated by ITRS [4]. Significant improvements in terms of defect density are expected to occur by processing the samples in a clean industrial environment.…”

Section: Discussionmentioning

confidence: 90%

“…A small variation of the environmental ). For Wsc [86], Microwave [85], PdMs pad [88], and idsA [87] M n = 16 (kg mol −1 ). For svA [64,77,83,84,89], the M n = 16 (kg mol −1 ) and 28 (kg mol −1 ).…”

Section: Discussionmentioning

confidence: 99%

“…In particular, comparison of ordering mechanisms and removal of defects between block copolymers that self-assembly with and without guiding fields are poorly explored. Figure 10 reports the data available in literature concerning the evolution of defect density (D) as a function of the annealing time (t) for RTP [69], SVA [77,89], and PDMS gel pad [88] methods. Data for the RTP method were extracted from SEM images of flat substrates using the procedure described in the literature [91] while all the other data reflect the evolution of defect density in topographically defined patterns having the same dimensions (width = 1 μm, depth = 40 nm).…”

Section: Discussionmentioning

confidence: 99%

“…In the latter case, SA of sub-10 nm nanostructures was achieved on wafer substrate in short processing time (<60 s) at 100 °C (Figure 7(h)). In the former case, the application of moderate shear force is reported to drive the alignment of sub-10 nm parallel cylinders in the direction of the shear force without any topographical guide in process time of only ~5 s at 100 °C [88].…”

Section: Exotic Annealing Processesmentioning

confidence: 99%

“…Figure 7(a) shows the reactor [86]. (e, f) idsA, adapted from [87] (g, h) PdMs gel pad solvent assisted annealing, adapted from [88].…”

Section: Exotic Annealing Processesmentioning

confidence: 99%

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Technological strategies for self-assembly of PS-b-PDMS in cylindrical sub-10 nm nanostructures for lithographic applications

Giammaria

Laus

Perego³

2018

Advances in Physics: X

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The continuous demand for small portable electronics is pushing the semiconductor industry to develop novel lithographic methods to fabricate the elementary structures for microelectronics devices with dimensions below 10 nm. Topdown strategies include multiple patterning photolithography, extreme ultraviolet lithography (EUVL), electron beam lithography (EBL), and nanoimprint lithography. Bottom-up approaches mainly rely on block copolymers (BCPs) self-assembly (SA). SA of BCPs is extremely appealing due to its excellent compatibility with conventional photolithographic processes, high-resolution patterns, and low process costs. Among the various BCPs, the polystyrene-b-polydimethylsiloxane (PS-b-PDMS) represents the most investigated material for the fabrication of sub-10 nm structures. However, PS-b-PDMS cannot be easily processed by conventional thermal treatments due to its slow SA kinetic coupled with a relatively low thermal stability. This review focuses on the available annealing methods to promote the SA PS-b-PDMS in parallel-oriented cylindrical sub-10 nm structures. Moreover, literature data regarding the annealing time, defects density, line edge roughness (LER) and line width roughness (LWR) are discussed with reference to the stringent requirements of semiconductor technology.

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Section: Discussionmentioning

confidence: 90%

Section: Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

Section: Exotic Annealing Processesmentioning

confidence: 99%

“…Figure 7(a) shows the reactor [86]. (e, f) idsA, adapted from [87] (g, h) PdMs gel pad solvent assisted annealing, adapted from [88].…”

Section: Exotic Annealing Processesmentioning

confidence: 99%

See 3 more Smart Citations

Technological strategies for self-assembly of PS-b-PDMS in cylindrical sub-10 nm nanostructures for lithographic applications

Giammaria

Laus

Perego³

2018

Advances in Physics: X

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Eliminating the Trade‐Off between the Throughput and Pattern Quality of Sub‐15 nm Directed Self‐Assembly via Warm Solvent Annealing

Kim

Park

et al. 2014

Adv Funct Materials

Self Cite

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The directed self-assembly (DSA) of block copolymers (BCPs) has been suggested as a promising nanofabrication solution. However, further improvements of both the pattern quality and manufacturability remain as critical challenges. Although the use of BCPs with a high Flory-Huggins interaction parameter ( χ ) has been suggested as a potential solution, this practical self-assembly route has yet to be developed due to their extremely slow selfassembly kinetics. In this study, it is reported that warm solvent annealing (WSA) in a controlled environment can markedly improve both the selfassembly kinetics and pattern quality. A means of avoiding the undesirable trade-off between the quality and formation throughput of the self-assembled patterns, which is a dilemma which arises when using the conventional solvent vapor treatment, is suggested. As a demonstration, the formation of well-defi ned 13-nm-wide self-assembled patterns (3σ line edge roughness of ≈2.50 nm) in treatment times of 0.5 min (for 360-nm-wide templates) is shown. Self-consistent fi eld theory (SCFT) simulation results are provided to elucidate the mechanism of the pattern quality improvement realized by WSA.

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Surface‐Shielding Nanostructures Derived from Self‐Assembled Block Copolymers Enable Reliable Plasma Doping for Few‐Layer Transition Metal Dichalcogenides

Yim

Sim

Park³

et al. 2016

Adv Funct Materials

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Precise modulation of electrical and optical properties of 2D transition metal dichalcogenides (TMDs) is required for their application to high‐performance devices. Although conventional plasma‐based doping methods have provided excellent controllability and reproducibility for bulk or relatively thick TMDs, the application of plasma doping for ultrathin few‐layer TMDs has been hindered by serious degradation of their properties. Herein, a reliable and universal doping route is reported for few‐layer TMDs by employing surface‐shielding nanostructures during a plasma‐doping process. It is shown that the surface‐protection oxidized polydimethylsiloxane nanostructures obtained from the sub‐20 nm self‐assembly of Si‐containing block copolymers can preserve the integrity of 2D TMDs and maintain high mobility while affording extensive control over the doping level. For example, the self‐assembled nanostructures form periodically arranged plasma‐blocking and plasma‐accepting nanoscale regions for realizing modulated plasma doping on few‐layer MoS2, controlling the n‐doping level of few‐layer MoS2 from 1.9 × 1011 cm−2 to 8.1 × 1011 cm−2 via the local generation of extra sulfur vacancies without compromising the carrier mobility.

show abstract

Proximity Injection of Plasticizing Molecules to Self-Assembling Polymers for Large-Area, Ultrafast Nanopatterning in the Sub-10-nm Regime

Cited by 70 publications

References 59 publications

Technological strategies for self-assembly of PS-b-PDMS in cylindrical sub-10 nm nanostructures for lithographic applications

Technological strategies for self-assembly of PS-b-PDMS in cylindrical sub-10 nm nanostructures for lithographic applications

Eliminating the Trade‐Off between the Throughput and Pattern Quality of Sub‐15 nm Directed Self‐Assembly via Warm Solvent Annealing

Surface‐Shielding Nanostructures Derived from Self‐Assembled Block Copolymers Enable Reliable Plasma Doping for Few‐Layer Transition Metal Dichalcogenides

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