“…[1][2][3][4][5][6][7] In devices, deep electronic levels associated with substitutional Au are sometimes exploited to reduce carrier lifetimes, whereas in other circumstances, with the Au present as a trace impurity, the same deep levels are highly detrimental. 8 Because of the latter effect, many investigators have studied the gettering of Au to controllably introduced sinks within Si; the examined gettering centers include SiO 2 precipitates and associated defects, 9 in-diffusing phosphorus, 10,11 ion-implantation damage and implanted impurities, [12][13][14][15] and cavities formed by implantation of hydrogen or helium and annealing. [16][17][18][19] Finally, Au reacts strongly with the unoxidized surface of Si, producing complex reconstructions, and these reconstructions have been extensively investigated on external surfaces following vapor deposition of Au in ultrahigh vacuum.…”