Proximity getterihg by MeV-implantation of carbon: microstructure and carrier lifetime measurements

Skorupa, W.; Kögler, R.; Schmalz, K.; Bartsch, H.

doi:10.1016/0168-583x(91)96167-j

Cited by 27 publications

(3 citation statements)

References 5 publications

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“…To grow an epitaxial layer on an ion-implanted wafer surface, element ions are generally implanted on the silicon wafer with high energy to maintain the perfect crystallinity of the ion-implanted wafer surface. Because end of range defects (EORDs) are generated during ion implantation with high energy, [23][24][25][26] if the epitaxial layer is grown on an ionimplanted wafer with high energy, the defects will expand from the EORDs during heat treatment in device fabrication. These expanded defects will degrade the device yield and electrical characteristics of the device.…”

Section: Introductionmentioning

confidence: 99%

Room-temperature bonding of epitaxial layer to carbon-cluster ion-implanted silicon wafers for CMOS image sensors

Koga¹,

Kadono²,

Shigematsu³

et al. 2018

Jpn. J. Appl. Phys.

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We propose a fabrication process for silicon wafers by combining carbon-cluster ion implantation and room-temperature bonding for advanced CMOS image sensors. These carbon-cluster ions are made of carbon and hydrogen, which can passivate process-induced defects. We demonstrated that this combination process can be used to form an epitaxial layer on a carbon-cluster ion-implanted Czochralski (CZ)-grown silicon substrate with a high dose of 1 ' 10 16 atoms/cm 2 . This implantation condition transforms the top-surface region of the CZ-grown silicon substrate into a thin amorphous layer. Thus, an epitaxial layer cannot be grown on this implanted CZ-grown silicon substrate. However, this combination process can be used to form an epitaxial layer on the amorphous layer of this implanted CZ-grown silicon substrate surface. This bonding wafer has strong gettering capability in both the wafer-bonding region and the carbon-cluster ion-implanted projection range. Furthermore, this wafer inhibits oxygen out-diffusion to the epitaxial layer from the CZ-grown silicon substrate after device fabrication. Therefore, we believe that this bonding wafer is effective in decreasing the dark current and white-spot defect density for advanced CMOS image sensors.

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Section: Introductionmentioning

confidence: 99%

Room-temperature bonding of epitaxial layer to carbon-cluster ion-implanted silicon wafers for CMOS image sensors

Koga¹,

Kadono²,

Shigematsu³

et al. 2018

Jpn. J. Appl. Phys.

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“…[1][2][3][4][5][6][7] In devices, deep electronic levels associated with substitutional Au are sometimes exploited to reduce carrier lifetimes, whereas in other circumstances, with the Au present as a trace impurity, the same deep levels are highly detrimental. 8 Because of the latter effect, many investigators have studied the gettering of Au to controllably introduced sinks within Si; the examined gettering centers include SiO 2 precipitates and associated defects, 9 in-diffusing phosphorus, 10,11 ion-implantation damage and implanted impurities, [12][13][14][15] and cavities formed by implantation of hydrogen or helium and annealing. [16][17][18][19] Finally, Au reacts strongly with the unoxidized surface of Si, producing complex reconstructions, and these reconstructions have been extensively investigated on external surfaces following vapor deposition of Au in ultrahigh vacuum.…”

Section: Introductionmentioning

confidence: 99%

Transport and reactions of gold in silicon containing cavities

Myers

Petersen

1998

Phys. Rev. B

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We quantified the strength of Au binding on cavity walls and in precipitates of the Au-Si molten phase within Si over the temperature range 1023-1123 K. Also determined was the diffusivity-solubility product of interstitial Au. These properties were obtained by using ion implantation and annealing to form multiple layers containing cavities or Au-Si precipitates and then measuring by Rutherford backscattering spectrometry the rate and extent of Au redistribution between layers during isothermal heating. Results were incorporated into a diffusion-reaction formalism describing the evolution of the coupled concentrations of interstitial Au, substitutional Au, Si interstitial atoms, and Si vacancies. Cavities were shown to be effective sinks for the gettering of Au from solution in Si. ͓S0163-1829͑98͒04911-X͔ PHYSICAL REVIEW B 15 MARCH 1998-II VOLUME 57, NUMBER 12 57 0163-1829/98/57͑12͒/7015͑12͒/$15.00 7015

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“…The method of gettering by means of ion implantation of usually light elements (С, Не, О) when the getering regions are located as close as possible to active device structures is well known as proximity gettering [4,5]. This approach is technologically adaptable as it can be easily integrated into device fabrication cycles by separating ion implantation and subsequent annealing which can be coupled with device heat treatments.…”

Section: Introductionmentioning

confidence: 99%

Physicochemical fundamentals of phase formation in silicon layers implanted with oxygen and carbon

Алешин¹,

Enisherlova²

2019

MoEM

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The thermodynamic and kinetic regularities of processes occurring during heat treatment in silicon layers implanted with oxygen and carbon ions have been considered. We have analyzed the regularities of silicon deformation, impurity distribution and defect formation after different annealing modes. Diffusion smearing of implanted impurities in these layers has not been observed during carbon and oxygen implantation. As-annealed carbon does not occupy sites of the silicon lattice, in contrast to the implantation behavior of other impurities, e.g. boron and phosphorus. Phase formation regularities in implanted layers during subsequent heat treatment have been analyzed. Changes in the free energy of the system during heterogeneous and homogeneous precipitate nucleation have been compared. Sequential implantation with carbon and oxygen ions has been found to initiate diffusion flows of carbon and oxygen toward the center of the ion doped layer (the uphill diffusion phenomenon). The possibility of uphill diffusion has been analyzed from the standpoints of the Onsager theory. We show that the contribution of the chemical interaction between oxygen and carbon is far greater than the entropy contribution to the diffusion flux. We have demonstrated the high efficiency of ion doping with oxygen and carbon for gettering of uncontrolled impurities from active regions of silicon structures. The efficiency of this gettering process has been assessed for epitaxial structures in which layers had been grown on silicon wafers implanted with these impurities. Uphill diffusion in the layers after double doping with carbon and oxygen has led to the formation of more defects which may provide for efficient gettering. We have found the optimal oxygen and carbon implantation dose ratio for maximal gettering efficiency.

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Proximity getterihg by MeV-implantation of carbon: microstructure and carrier lifetime measurements

Cited by 27 publications

References 5 publications

Room-temperature bonding of epitaxial layer to carbon-cluster ion-implanted silicon wafers for CMOS image sensors

Room-temperature bonding of epitaxial layer to carbon-cluster ion-implanted silicon wafers for CMOS image sensors

Transport and reactions of gold in silicon containing cavities

Physicochemical fundamentals of phase formation in silicon layers implanted with oxygen and carbon

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