Transport and reactions of gold in silicon containing cavities

Competition for Au gettering in Si between two cavity layers of different diameter (34 and 12 nm) is examined. Au is initially contained in the large cavity layer made by He implantation. Transport of Au towards the second, small diameter cavity layer is measured by ion scattering. The true surface in both layers is determined by electron microscopy. Small cavities are found to be four times more efficient gettering sites than large cavities for the same amount of internal surface. This difference is explained by a simple model based on curvature thermodynamics, faceting, and surface reconstruction.

show abstract

“…This is close to the abovementioned value of ⌬G in Ref. 5. The uncertainty in 0 ϩ␤ 2 is mainly due to the uncertainty in S 2 and D imp .…”

Section: ͑3͒supporting

confidence: 90%

“…3, the present experiment can be treated as two thin cavity layers separated by the distance ⌬x and exchanging interstitial impurities in a steady-state diffusion process. 5 All the Q T impurities are contained in layer 1 at time tϭ0. Through Eq.…”

Section: Influence Of Curvature On Impurity Gettering By Nanocavitiesmentioning

confidence: 99%

Influence of curvature on impurity gettering by nanocavities in Si

Schiettekatte

Wintgens

Roorda

1999

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…Growth of such materials inside open-volume defects in crystalline materials has the advantage of perfectly clean, uncontaminated surfaces as well as limited growth volume reducing stress-induced defects, resulting in a physical method to fabricate nanocrystals. The materials Ag and Si, immiscible below the eutectic point 830°C 1 , are chosen because Ag atoms do not form a compound but chemisorb on inner surface of voids 2 3 . The diffusion of Ag atoms through the Si lattice is slow and is mediated by point defects 4 5 6 , causing localized strains in the Si lattice which are relieved upon Ag chemisorption inside a void.…”

mentioning

confidence: 99%

Physical assembly of Ag nanocrystals on enclosed surfaces in monocrystalline Si

Martin

Theodore²,

Wei

et al. 2014

Sci Rep

View full text Add to dashboard Cite

Growth of thin crystals on external substrate surfaces by many different methods is a well-known technique, but its extension to inner, enclosed surfaces of large defects in monocrystalline materials has not yet been reported. The literature on thin film growth and defects in materials can be leveraged to fabricate new structures for a variety of applications. Here we show a physical process of nucleation and evolution of nanocrystalline silver inside voids in monocrystalline silicon. We found that the Ag growth is hetero-epitaxial using a coincident site lattice. Alignment of Ag and Si atomic planes is uniformly observed by high resolution transmission electron microscopy and macroscopically by channeling Rutherford backscattering spectrometry.

show abstract

“…It has been shown in many studies that voids are very efficient gettering sites for metallic atoms . Due to their long stretched strain fields, voids attract and accumulate metallic contaminants and, under certain conditions, metallic nano‐particles might be created by filling the empty volume of the voids.…”

Section: Introductionmentioning

confidence: 99%

Self-assembled Au dots in SiGe/Si layers for plasmonic application

Гайдук

Larsen

2014

Phys. Status Solidi A

View full text Add to dashboard Cite

The concept of this study is based on self-assembled formation of voids in strained Si/SiGe heterostructures, and formation of nano-shells and nano-particles of gold through a gettering process. The gettering of vacuum deposited gold to the voids was studied using Rutherford backscattering and transmission electron microscopy. A very well defined layer of voids was formed in the strained SiGe layer at a depth of 0.5 mm as a result of helium implantation and thermal annealing. Due to strain enhanced vacancy accumulation, the voids nucleate and grow exclusively in the SiGe layer. The voids then getter large amount of Au which cover the inner walls of the voids at low temperature or precipitates into void-located nano-crystals at a temperature of 850 8C. Effects connected to structural transformations in the Si/SiGe layers during self-assembling of nano-voids and metallic dots, the optical properties of the layers, and the resulting effects of nanostructures on the spectral dependence of the photocurrent in the Si/SiGe structures are reported.

show abstract

Transport and reactions of gold in silicon containing cavities

Cited by 31 publications

References 38 publications

Influence of curvature on impurity gettering by nanocavities in Si

Influence of curvature on impurity gettering by nanocavities in Si

Physical assembly of Ag nanocrystals on enclosed surfaces in monocrystalline Si

Self-assembled Au dots in SiGe/Si layers for plasmonic application

Contact Info

Product

Resources

About