Physical assembly of Ag nanocrystals on enclosed surfaces in monocrystalline Si

Martin, Michael; Theodore, N. David; Wei, Chao-Chen; Shao, Lin

doi:10.1038/srep06744

Cited by 8 publications

(2 citation statements)

References 36 publications

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“…2 and 4 represents the mean over all values extracted from the simulations. Initial island shapes are pyramids with a height-to-radius aspect ratio of ~1.7, bounded predominantly by (111) smooth sidewall facets, in accordance with island shapes obtained in our previous computational study 25 and experimental data on vapor-based growth of noble-metal nanostructures [35][36][37] . The island centers are aligned along the (110) direction (see Figs.…”

Section: Methodssupporting

confidence: 86%

Coalescence dynamics of 3D islands on weakly-interacting substrates

Gervilla

Almyras

Lü

et al. 2020

Sci Rep

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We use kinetic Monte carlo simulations and analytical modelling to study coalescence of threedimensional (3D) nanoscale faceted silver island pairs on weakly-interacting fcc(111) substrates, with and without concurrent supply of mobile adatoms from the vapor phase. Our simulations show that for vapor flux arrival rates F < 1 monolayer/second (ML/s) coalescence manifests itself by one of the islands absorbing the other via sidewall facet migration. This process is mediated by nucleation and growth of two-dimensional (2D) layers on the island facets, while the supply of mobile atoms increases the nucleation probability and shortens the time required for coalescence completion. When F is increased above 1 ML/s, coalescence is predominantly governed by deposition from the vapor phase and the island pair reaches a compact shape via agglomeration. The crucial role of facets for the coalescence dynamics is further supported by a mean-field thermodynamic description of the nucleation energetics and kinetics. Our findings explain experimental results which show that two-dimensional film growth morphology on weakly-interacting substrates is promoted when the rate of island coalescence is suppressed. The present study also highlights that deviations of experimentally reported film morphological evolutions in weakly-interacting film/substrate systems from predictions based on the sintering and particle growth theories may be understood in light of the effect of deposition flux atoms on the energetics and kinetics of facet-layer nucleation during coalescence. Coalescence-the process of merging two or more atomic islands or grains into a single cluster-is an ubiquitous phenomenon in material synthesis technologies, and largely determines the morphology and microstructure of metallurgical alloys 1 and vapor-deposited thin films 2,3 , as well as the size and shape of free-standing and supported nanoparticles 4,5. The most established description of island coalescence relies on the sintering theory, according to which shape equilibration of coalescing clusters proceeds via isotropic atomic surface diffusion 6. This scenario is relevant for temperatures above the roughening transition limit T R for which generation of ample amounts of adatom-kink pairs facilitates continuous and uniform mass transport from the convex to the concave areas of the island cluster 7. However, many material synthesis processes, including vapor-based growth of thin films and supported nanoparticles on weakly-interacting substrates, occur below T R. At these conditions, generation of adatom kink-pairs is infrequent, leading to formation of three-dimensional (3D) islands bounded by flat sidewall facets 8. Combe et. al. 9 studied shape equilibration of single free-standing faceted 3D nanoparticles upon annealing at temperatures smaller than T R showing that mass transport is mediated by nucleation and growth of two-dimensional (2D) layers on the facet surfaces. The relevance of this mechanism for coalescence of 3D clusters supported on a substrate has not b...

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Section: Methodssupporting

confidence: 86%

Coalescence dynamics of 3D islands on weakly-interacting substrates

Gervilla

Almyras

Lü

et al. 2020

Sci Rep

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“…dislocations as well as strong stress fields [16]. In fact, there are considerable amount of RBS/C experiments which were performed by using samples clearly containing voids [5,17,18]. However, due to the challenge of separating individual contributions of all the defects in experimental samples, it is difficult to identify the effect induced by voids alone.…”

Section: Introductionmentioning

confidence: 99%

Effect of lattice voids on Rutherford backscattering dechanneling in tungsten

Jin¹,

Djurabekova²,

Sequeira³

et al. 2023

J. Phys. D: Appl. Phys.

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The response of Rutherford backscattering spectrometry in channeling mode through a dechanneling mechanism to the presence of voids in crystals has been considered to be qualitatively weak. However there is a lack of the validation of its quantitative behavior. In this work, we present an investigation on the dechanneling induced by voids with different shapes in tungsten based on a simulation approach. We observe that dechanneling cross section of large voids is indeed found as a product of the minimum yield and the area projected from the void to the target surface as suggested by analytical models in literature. However, this method overestimates the dechanneling induced by small voids, in which the spatial distribution of incident ions inside a target has a non-negligible effect. We found that an inter-void distance effect is able to further lower dechanneling signals if the inter-void distance is small. When small spherical voids coalesce into a group of larger ones, the dechanneling fraction is not expected to increase. In addition, comparisons between voids and stacking faults show that there are significant discrepancies between these two defects in terms of dechanneling.

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Metallization in Solar Cell

Zaidi

2021

Crystalline Silicon Solar Cells

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Physical assembly of Ag nanocrystals on enclosed surfaces in monocrystalline Si

Cited by 8 publications

References 36 publications

Coalescence dynamics of 3D islands on weakly-interacting substrates

Coalescence dynamics of 3D islands on weakly-interacting substrates

Effect of lattice voids on Rutherford backscattering dechanneling in tungsten

Metallization in Solar Cell

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