Abstract:The thermodynamic and kinetic regularities of processes occurring during heat treatment in silicon layers implanted with oxygen and carbon ions have been considered. We have analyzed the regularities of silicon deformation, impurity distribution and defect formation after different annealing modes. Diffusion smearing of implanted impurities in these layers has not been observed during carbon and oxygen implantation. As-annealed carbon does not occupy sites of the silicon lattice, in contrast to the implantatio… Show more
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