Prototype of Phase-Change Channel Transistor for Both Nonvolatile Memory and Current Control

Hosaka, Sumio; Miyauchi, K.; Tamura, Tomoyuki; Yin, You; Sone, Hayato

doi:10.1109/ted.2006.890386

Cited by 13 publications

(11 citation statements)

References 11 publications

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“…The IGZO TFTs exhibit typical performance with an effective field-effect mobility μFE, eff of 24.9 cm 2 /Vs and an ON/OFF ratio of ~8·10 4 . The GST TFTs show the desired p-type behavior with an ON/OFF modulation of 388, which is ~20-fold higher than present work [12]. Their μFE, eff is ~0.04 cm 2 /Vs, which is expected for the amorphous phase [11].…”

Section: Resultsmentioning

confidence: 54%

“…So far, it has not received much attention as a transistor material despite its large popularity in phase-change memory technology [8] and its known p-type semiconducting properties [9] with large hole mobilities in the crystalline phases ranging from 15-200 cm 2 /Vs depending on the material composition [10,11]. Prior works on GST TFTs have found poor drain current ID modulation with ON/OFF ratios hardly exceeding a factor of 20 [12] even when the GST thickness was scaled down to 10 nm [13]. In this work, we further reduce the GST thickness to 5 nm and enhance the gate control by employing a 20 nm thick Al2O3 high-k gate dielectric.…”

Section: Introductionmentioning

confidence: 99%

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Flexible CMOS electronics based on p-type Ge<inf>2</inf>Sb<inf>2</inf>Te<inf>5</inf> and n-type InGaZnO<inf>4</inf> semiconductors

Daus¹,

Han²,

Knobelspies³

et al. 2017

2017 IEEE International Electron Devices Meeting (IEDM)

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Abstract-Ultra-thin p-type chalcogenide glass Ge2Sb2Te5 (GST) semiconductor layers are employed to form flexible thin-film transistors (TFTs). For the first time, TFTs based on GST show saturating output characteristics and an ON/OFF ratio up to 388, exceeding present reports by a factor of ~20. The channel current modulation is greatly enhanced by using ultra-thin 5 nm thick amorphous GST layers and 20 nm thick high-k Al2O3 gate dielectrics. Flexible CMOS circuits are realized in combination with the n-type oxide semiconductor InGaZnO4 (IGZO). The CMOS inverters show voltage gain of up to 69. Furthermore, flexible NAND gates are presented. The bending stability is shown for a tensile radius of 6 mm.

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Section: Resultsmentioning

confidence: 54%

Section: Introductionmentioning

confidence: 99%

Flexible CMOS electronics based on p-type Ge<inf>2</inf>Sb<inf>2</inf>Te<inf>5</inf> and n-type InGaZnO<inf>4</inf> semiconductors

Daus¹,

Han²,

Knobelspies³

et al. 2017

2017 IEEE International Electron Devices Meeting (IEDM)

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“…So far only few works have considered GeSbTe (GST) compounds as channel materials for TFTs [19,20,21,22,23,24,25], despite their p-type semiconducting properties [26,27], potentially large hole mobilities between 10–100 cm

^{2}

/Vs [27,28], as well as low-temperature processability. Notably, the material has been extensively studied for phase-change memory applications [29] and is commercially applied in rewritable optical discs [30].…”

Section: Introductionmentioning

confidence: 99%

“…Notably, the material has been extensively studied for phase-change memory applications [29] and is commercially applied in rewritable optical discs [30]. Prior works on GST TFTs have found difficulties in the ON/OFF current modulation and the output characteristics did not show saturating drain currents (I

_{normalD}

) [19,20,21,22,23,24,25]. In this work, we study GST TFTs on a flexible substrate and demonstrate performance improvements through downscaling of the GST thickness to 5 nm.…”

Section: Introductionmentioning

confidence: 99%

Ge2Sb2Te5 p-Type Thin-Film Transistors on Flexible Plastic Foil

et al. 2018

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In this work, we show the performance improvement of p-type thin-film transistors (TFTs) with Ge2Sb2Te5 (GST) semiconductor layers on flexible polyimide substrates, achieved by downscaling of the GST thickness. Prior works on GST TFTs have typically shown poor current modulation capabilities with ON/OFF ratios ≤20 and non-saturating output characteristics. By reducing the GST thickness to 5 nm, we achieve ON/OFF ratios up to ≈300 and a channel pinch-off leading to drain current saturation. We compare the GST TFTs in their amorphous (as deposited) state and in their crystalline (annealed at 200 °C) state. The highest effective field-effect mobility of 6.7 cm2/Vs is achieved for 10-nm-thick crystalline GST TFTs, which have an ON/OFF ratio of ≈16. The highest effective field-effect mobility in amorphous GST TFTs is 0.04 cm2/Vs, which is obtained in devices with a GST thickness of 5 nm. The devices remain fully operational upon bending to a radius of 6 mm. Furthermore, we find that the TFTs with amorphous channels are more sensitive to bias stress than the ones with crystallized channels. These results show that GST semiconductors are compatible with flexible electronics technology, where high-performance p-type TFTs are strongly needed for the realization of hybrid complementary metal-oxide-semiconductor (CMOS) technology in conjunction with popular n-type oxide semiconductor materials.

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“…PCRAM are a candidate to replace flash memory for non-volatile data storage applications due to their lower power consumption and higher operation speed [5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Influence of the local structure in phase-change materials on their dielectric permittivity

Shportko¹,

Venger²

2016

Nano Online

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Ge-Sb-Te alloys, which belong to the phase-change materials, are promising materials for data storage and display and data visualization applications due to their unique properties. This includes a remarkable difference of their electrical and optical properties in the amorphous and crystalline state. Pronounced change of optical properties for Ge-Sb-Te alloys is linked to the different bonding types and different atomic arrangements in amorphous and crystalline states. The dielectric function of phase-change materials has been investigated in the far infrared (FIR) range. Phonons have been detected by FTIR spectroscopy. Difference of the dispersion of the dielectric permittivity of amorphous and crystalline samples is caused by different structures in different states which contribute to the dielectric permittivity.

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Prototype of Phase-Change Channel Transistor for Both Nonvolatile Memory and Current Control

Cited by 13 publications

References 11 publications

Flexible CMOS electronics based on p-type Ge<inf>2</inf>Sb<inf>2</inf>Te<inf>5</inf> and n-type InGaZnO<inf>4</inf> semiconductors

Flexible CMOS electronics based on p-type Ge<inf>2</inf>Sb<inf>2</inf>Te<inf>5</inf> and n-type InGaZnO<inf>4</inf> semiconductors

Ge2Sb2Te5 p-Type Thin-Film Transistors on Flexible Plastic Foil

Influence of the local structure in phase-change materials on their dielectric permittivity

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