Proton damage effects in high performance P-channel CCDs

Spratt, J.P.; Conger, C.; Bredthauer, R.; Byers, W.; Groulx, R.; Leadon, R. E.; Clark, Heather

doi:10.1109/tns.2005.860738

Cited by 11 publications

(12 citation statements)

References 15 publications

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“…The results are comparable to other reported values of activation energies of 0.61 eV [15] and 0.63 eV [18]. The measurement suggests that, for the p-channel devices tested, the divacancy is the dominant source of thermally generated dark current pre and post irradiation.…”

Section: Dark Currentsupporting

confidence: 88%

Comparison of proton irradiated P-channel and N-channel CCDs

Gow

Murray

Holland

et al. 2012

Nuclear Instruments and Methods in Physics Research Section A:

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Charge transfer inefficiency and dark current effects are compared for e2v technologies plc. p-channel and n-channel CCDs, both irradiated with protons. The p-channel devices, prior to their irradiation, exhibited twice the dark current and considerable worse charge transfer inefficiency (CTI) than a typical n-channel. The radiation induced increase in dark current was found to be comparable with n-channel CCDs, and its temperature dependence suggest the divacancy is the dominant source of thermally generated dark current pre and post irradiation. The factor of improvement in tolerance to radiation induced CTI varied by between 15 and 25 for serial CTI and 8 and 3 for parallel CTI, between -70 • C and -110 • C respectively.

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Section: Dark Currentsupporting

confidence: 88%

Comparison of proton irradiated P-channel and N-channel CCDs

Gow

Murray

Holland

et al. 2012

Nuclear Instruments and Methods in Physics Research Section A:

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“…The LBNL p-channel CCDs are fabricated on high-resistivity n-type silicon with boron implanted channels. In the p-channel CCDs, divacancy states are expected to be the dominant hole trap [7]- [9]. It has been predicted that divacancy formation in p-channel CCDs is less favorable than phosphorus-vacancy traps in n-channel CCDs [8], and prior studies have shown improved performance after radiation exposure [7], [10], [11].…”

Section: Ccd Requirementsmentioning

confidence: 99%

Radiation Tolerance of Fully-Depleted P-Channel CCDs Designed for the SNAP Satellite

Dawson

Bebek

Emes

et al. 2008

IEEE Trans. Nucl. Sci.

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Abstract-Thick, fully depleted p-channel charge-coupled devices (CCDs) have been developed at the Lawrence Berkeley National Laboratory (LBNL). These CCDs have several advantages over conventional thin, n-channel CCDs, including enhanced quantum efficiency and reduced fringing at nearinfrared wavelengths and improved radiation tolerance. Here we report results from the irradiation of CCDs with 12.5 and 55 MeV protons at the LBNL 88-Inch Cyclotron and with 0.1 -1 MeV electrons at the LBNL 60 Co source. These studies indicate that the LBNL CCDs perform well after irradiation, even in the parameters in which significant degradation is observed in other CCDs: charge transfer efficiency, dark current, and isolated hot pixels. Modeling the radiation exposure over a sixyear mission lifetime with no annealing, we expect an increase in dark current of 20 e − /pixel/hr, and a degradation of charge transfer efficiency in the parallel direction of 3 × 10 −6 and 1 × 10 −6 in the serial direction. The dark current is observed to improve with an annealing cycle, while the parallel CTE is relatively unaffected and the serial CTE is somewhat degraded. As expected, the radiation tolerance of the p-channel LBNL CCDs is significantly improved over the conventional n-channel CCDs that are currently employed in space-based telescopes such as the Hubble Space Telescope.

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“…The increased tolerance to displacement damage of a p-channel CCD was first demonstrated in 1997 2 and since then a number of other studies have demonstrated an improved hardness to radiation induced charge transfer inefficiency (CTI) when compared to n-channel CCDs [3][4][5][6][7] . The improvement has been linked to the number and type of defects formed within the buried channel, 3 and how these defects impact charge transfer, i.e.…”

Section: Introductionmentioning

confidence: 99%

“…The radiation induced defects which increase CTI in a p-channel CCD have been linked to the divancancy and other traps related to carbon and oxygen interstitials [3][4][5][6][7][8] . As there are less radiation induced defects in a p-channel CCD which have been shown to increase CTI and because they are formed in smaller quantities (the divacancy is a second order defect and boron defects have not 4 been shown to impact CTE) when compared to an n-channel equivalent, p-channel CCDs are more hard to radiation induced CTI.…”

Section: Introductionmentioning

confidence: 99%

“…The study used seven e2v technologies p-channel CCD204 5 devices fabricated with exactly the same process as standard n-channel CCDs but with simple reversal of dopant polarities, the gate dielectric is the same in both cases. The full study includes a complete electro-optical characterisation to determine: optimal operational temperature, charge to voltage conversion factor, global and local photo-response non-uniformity, read out noise, nonlinearity, image and register full well capacity, dark signal, dark signal non-uniformity, defects in darkness, charge injection uniformity, parallel and serial charge transfer efficiency, point spread function, modulation transfer function, quantum efficiency and trap identification by pumping.…”

Section: Introductionmentioning

confidence: 99%

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Postirradiation behavior of p-channel charge-coupled devices irradiated at 153 K

Gow

Wood

Murray

et al. 2016

J. Astron. Telesc. Instrum. Syst

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b e2v technologies plc, 106 Waterhouse Lane, Chelmsford, Essex, CM1 2QU, UK.Abstract. The displacement damage hardness that can be achieved using p-channel charge coupled devices (CCD) was originally demonstrated in 1997, and since then a number of other studies have demonstrated an improved tolerance to radiation-induced CTI when compared to n-channel CCDs.A number of recent studies have also shown that the temperature history of the device after the irradiation impacts the performance of the detector, linked to the mobility of defects at different temperatures. This study describes the initial results from an e2v technologies p-channel CCD204 irradiated at 153 K with a 10 MeV equivalent proton fluences of 1.24×10 9 and 1.24×10 11 protons.cm -2 . The dark current, cosmetic quality and the number of defects identified using trap pumping immediately were monitored after the irradiation for a period of 150 hours with the device held at 153 K and then after different periods of time at room temperature. The device also exhibited a flatband voltage shift of around 30 mV per krad, determined by the reduction in full well capacity.

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Proton damage effects in high performance P-channel CCDs

Cited by 11 publications

References 15 publications

Comparison of proton irradiated P-channel and N-channel CCDs

Comparison of proton irradiated P-channel and N-channel CCDs

Radiation Tolerance of Fully-Depleted P-Channel CCDs Designed for the SNAP Satellite

Postirradiation behavior of p-channel charge-coupled devices irradiated at 153 K

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