Comparison of proton irradiated P-channel and N-channel CCDs

Gow, Jason; Murray, Neil J.; Holland, Andrew D.; Burt, David; Pool, P.

doi:10.1016/j.nima.2012.05.059

Cited by 6 publications

(12 citation statements)

References 15 publications

(22 reference statements)

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“…It was found to be between 0.61 eV and 0.63 eV. These results are comparable to other reported values for p-channel CCDs [10,12,14]. It should be noted that only data collected above 180 K was used during this analysis.…”

Section: B Dark Currentsupporting

confidence: 86%

“…An indication of the defect which could be responsible is also illustrated, based on the emission time constants calculated by Mostek et al 2010 [17]. Both the serial and parallel CTI were comparable to those measured using an n-channel CCD, demonstrating a clear improvement in device manufacture and material selection at e2v over that used previously [9,14] and believed to be as a result of using bulk material. The poor CTI of batch #10152 at around 170 K is believed to be as a result of using doubled side polished wafers, leading to an increase in the number of defects present within the CCD through no back-surface getter being present.…”

Section: Charge Transfer Inefficiencysupporting

confidence: 53%

“…The benefit of using p-channel CCDs to achieve greater displacement damage hardness was originally demonstrated in 1997 [8] and a number of other studies have demonstrated an improved tolerance to radiation-induced CTI when compared to n-channel CCDs [9][10][11][12][13][14], therefore the use of a p-channel CCD was considered for Euclid. However, due to the test readiness level of a suitable p-channel CCD the n-channel CCD273 was selected and the work on p-channel CCDs decoupled from the Euclid programme.…”

Section: Introductionmentioning

confidence: 99%

“…This paper highlighted the complications which arise when attempting to make comparisons using different measurement techniques and made the recommendation that tests should be performed for a specific application, using "the appropriate operating modes and signal levels" [15]. The other aim of this initial investigation was to provide input into a future more detailed study An earlier attempt was made to use similar operating conditions to an n-channel CCD02 using the e2v technologies p-channel CCD47 [14]. However, due to the poor preirradiation performance of the p-channel CCD47 the clocking scheme used was different.…”

Section: Introductionmentioning

confidence: 99%

“…The poor pre-irradiation performance of the p-channel CCD47 was attributed to its manufacture on epitaxial silicon [14]. Bulk (float zone) material having demonstrated comparable base CTI equivalent to n-channel devices [10,13] the two batches of back-illuminated p-channel CCD204s were manufactured using high resistivity bulk n-type silicon and thinned to ~70 µm.…”

Section: Introductionmentioning

confidence: 99%

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Proton Damage Comparison of an e2v Technologies n-channel and p-channel CCD204

Gow

Murray

Holland

et al. 2014

IEEE Trans. Nucl. Sci.

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Abstract-Comparisons have been made of the relative degradation of charge transfer efficiency in n-channel and p-channel CCDs subjected to proton irradiation. The comparison described in this paper was made using e2v technologies plc. CCD204 devices fabricated using the same mask set. The device performance was compared over a range of temperatures using the same experimental arrangement and technique to provide a like-for-like comparison. The parallel transfer using the p-channel CCD was then optimised using a trap pumping technique to identify the optimal operating conditions at 153 K.

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Section: B Dark Currentsupporting

confidence: 86%

Section: Charge Transfer Inefficiencysupporting

confidence: 53%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Proton Damage Comparison of an e2v Technologies n-channel and p-channel CCD204

Gow

Murray

Holland

et al. 2014

IEEE Trans. Nucl. Sci.

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Dark signal correction for a lukecold frame-transfer CCD

Hochedez

Timmermans²,

Hauchecorne

et al. 2013

A&A

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Context. Astrophysical observations must be corrected for their imperfections of instrumental origin. When charge-coupled devices (CCDs) are used, their dark signal is one such hindrance. In their pristine state, most CCD pixels are cool, that is, they exhibit a low quasi-uniform dark current, which can be estimated and corrected for. In space, after having been hit by an energetic particle, pixels can turn hot, viz. they start delivering excessive, less predictable, dark current. The hot pixels therefore need to be flagged so that a subsequent analysis may ignore them. Aims. The image data of the PICARD-SODISM solar telescope require dark signal correction and hot pixel identification. Its E2V 42-80 CCD operates at −7.2• C and has a frame-transfer architecture. Both image and memory zones thus accumulate dark current during integration and readout time, respectively. These two components must be separated in order to estimate the dark signal for any given observation. This is the main purpose of the dark signal model presented in this paper. Methods. The dark signal time-series of every pixel was processed by the unbalanced Haar technique to timestamp when its dark signal changed significantly. In-between these instants, the two components were assumed to be constant, and a robust linear regression, with respect to integration time, provides first estimates and a quality coefficient. The latter serves to assign definitive estimates for this pixel and that period. Results. Our model is part of the SODISM Level 1 data production scheme. To confirm its reliability, we verified on dark frames that it leaves a negligible residual bias (5 e − ) and generates a small rms error (25 e − rms). We also examined the distribution of the image zone dark current. The cool pixel level is found to be 4.0 e − pxl −1 s −1 , in agreement with the predicted value. The emergence rate of hot pixels was investigated as well. It yields a threshold criterion at 50 e − pxl −1 s −1 . The growth rate is found to be on average ∼500 new hot pixels per day, that is, 4.2% of the image zone area per year. Conclusions. A new method for dark signal correction of a frame-transfer CCD operating near −10• C is described and applied. It allows making recommendations about the implementation and scientific usage of such CCDs. Moreover, aspects of the method (adaptation of the unbalanced Haar technique, dedicated robust linear regression) have a generic interest.

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Studying charge-trapping defects within the silicon lattice of a p-channel CCD using a single-trap ``pumping'' technique

et al. 2014

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The goals of future space missions such as Euclid require unprecedented positional accuracy from the responsible detector. Charge coupled devices (CCDs) can be manufactured with exceptional charge transfer properties; however the harsh radiation environment of space leads to damage within the silicon lattice, predominantly through proton collisions. The resulting lattice defects can trap charge, degrading the positional accuracy and reducing the useful operating time of a detector. Mitigation of such effects requires precise knowledge of defects and their effects on charge transfer within a CCD. We have used the technique of single-trap "pumping" to study two such charge trapping defects; the silicon divacancy and the carbon interstitial, in a p-channel CCD. We show this technique can be used to give accurate information about trap parameters required for radiation damage models and correction algorithms. We also discuss some unexpected results from studying defects in this way.

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Comparison of proton irradiated P-channel and N-channel CCDs

Cited by 6 publications

References 15 publications

Proton Damage Comparison of an e2v Technologies n-channel and p-channel CCD204

Proton Damage Comparison of an e2v Technologies n-channel and p-channel CCD204

Dark signal correction for a lukecold frame-transfer CCD

Studying charge-trapping defects within the silicon lattice of a p-channel CCD using a single-trap ``pumping'' technique

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