Proton Damage Comparison of an e2v Technologies n-channel and p-channel CCD204

Gow, Jason; Murray, Neil J.; Holland, Andrew D.; Burt, David

doi:10.1109/tns.2014.2298254

Cited by 14 publications

(26 citation statements)

References 21 publications

(45 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It is based on the same architecture used in the CCD203, previously flown on board the Solar Dynamics Observatory launched in 2010 18 , but with the inclusion of a charge injection structure. Both p-channel 7,19 and n-channel 20 variants have been produced.…”

Section: Ccd204mentioning

confidence: 99%

“…The increased tolerance to displacement damage of a p-channel CCD was first demonstrated in 1997 2 and since then a number of other studies have demonstrated an improved hardness to radiation induced charge transfer inefficiency (CTI) when compared to n-channel CCDs [3][4][5][6][7] . The improvement has been linked to the number and type of defects formed within the buried channel, 3 and how these defects impact charge transfer, i.e.…”

Section: Introductionmentioning

confidence: 99%

“…The radiation induced defects which increase CTI in a p-channel CCD have been linked to the divancancy and other traps related to carbon and oxygen interstitials [3][4][5][6][7][8] . As there are less radiation induced defects in a p-channel CCD which have been shown to increase CTI and because they are formed in smaller quantities (the divacancy is a second order defect and boron defects have not 4 been shown to impact CTE) when compared to an n-channel equivalent, p-channel CCDs are more hard to radiation induced CTI.…”

Section: Introductionmentioning

confidence: 99%

“…As there are less radiation induced defects in a p-channel CCD which have been shown to increase CTI and because they are formed in smaller quantities (the divacancy is a second order defect and boron defects have not 4 been shown to impact CTE) when compared to an n-channel equivalent, p-channel CCDs are more hard to radiation induced CTI. A comparison of the n-channel and p-channel CCD204 performance from a previous room temperature irradiation study can be found in Gow et al 7 . Additional work to improve our understanding of radiation induced defects and their evolution in both n-channel and p-channel CCDs, using trap pumping, and the impact on charge transfer is planned for 2016.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Postirradiation behavior of p-channel charge-coupled devices irradiated at 153 K

Gow

Wood

Murray

et al. 2016

J. Astron. Telesc. Instrum. Syst

View full text Add to dashboard Cite

b e2v technologies plc, 106 Waterhouse Lane, Chelmsford, Essex, CM1 2QU, UK.Abstract. The displacement damage hardness that can be achieved using p-channel charge coupled devices (CCD) was originally demonstrated in 1997, and since then a number of other studies have demonstrated an improved tolerance to radiation-induced CTI when compared to n-channel CCDs.A number of recent studies have also shown that the temperature history of the device after the irradiation impacts the performance of the detector, linked to the mobility of defects at different temperatures. This study describes the initial results from an e2v technologies p-channel CCD204 irradiated at 153 K with a 10 MeV equivalent proton fluences of 1.24×10 9 and 1.24×10 11 protons.cm -2 . The dark current, cosmetic quality and the number of defects identified using trap pumping immediately were monitored after the irradiation for a period of 150 hours with the device held at 153 K and then after different periods of time at room temperature. The device also exhibited a flatband voltage shift of around 30 mV per krad, determined by the reduction in full well capacity.

show abstract

Section: Ccd204mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Postirradiation behavior of p-channel charge-coupled devices irradiated at 153 K

Gow

Wood

Murray

et al. 2016

J. Astron. Telesc. Instrum. Syst

View full text Add to dashboard Cite

show abstract

“…The concentration of these defects increases after irradiation and an additional trap is generated with an energy of around 0.42 eV below the conduction band which is attributed to the phosphorous vacancy (E-centre). It was first demonstrated that a p-channel CCD could offer increased tolerance to displacement damage in 1997 3 , the improved tolerance has since been demonstrated in a number of other studies comparing p-channel and n-channel performance [4][5][6][7][8] The dopant used in p-channel is boron; boron has not been shown to have the same impact on CTE as the phosphorous dopant used in n-channel devices. Therefore, immediately there is less concentration of impurities from which stable defects can be formed that could impact charge transfer.…”

Section: Introductionmentioning

confidence: 99%

Charge transfer efficiency in a p-channel CCD irradiated cryogenically and the impact of room temperature annealing

et al. 2016

Self Cite

View full text Add to dashboard Cite

It is important to understand the impact of the space radiation environment on detector performance, thereby ensuring that the optimal operating conditions are selected for use in flight. The best way to achieve this is by irradiating the device using appropriate mission operating conditions, i.e. holding the device at mission operating temperature with the device powered and clocking. This paper describes the Charge Transfer Efficiency (CTE) measurements made using an e2v technologies p-channel CCD204 irradiated using protons to the 10 MeV equivalent fluence of 1.24×10 9 protons.cm -2at 153 K. The device was held at 153 K for a period of 7 days after the irradiation before being allowed up to room temperature where it was held at rest, i.e. unbiased, for twenty six hours to anneal before being cooled back to 153 K for further testing, this was followed by a further one week and three weeks of room temperature annealing each separated by further testing. A comparison to results from a previous room temperature irradiation of an n-channel CCD204 is made using assumptions of a factor of two worse CTE when irradiated under cryogenic conditions which indicate that p-channel CCDs offer improved tolerance to radiation damage when irradiated under cryogenic conditions.

show abstract

Characterization and Optimization of Skipper CCDs for the SOAR Integral Field Spectrograph

Villalpando,

Drlica-Wagner,

Plazas Malagón

et al. 2024

PASP

View full text Add to dashboard Cite

We present results from the characterization and optimization of Skipper charge-coupled devices (CCDs) for use in a focal plane prototype for the Southern Astrophysical Research Integral Field Spectrograph (SIFS). We tested eight Skipper CCDs and selected six for SIFS based on performance results. The Skipper CCDs are 6k × 1k, 15 μm pixels, thick, fully depleted, p-channel devices that have been thinned to ∼250 μm, backside processed, and treated with an anti-reflective coating. We demonstrate a single-sample readout noise of <4.3 e− rms pixel−1 in all amplifiers. We optimize the readout sequence timing to achieve a readout noise of 0.5 e− rms pixel−1 after 74 non-destructive measurements, which can be accomplished in a region covering 5% of the detector area in a readout time of <4 minutes. We demonstrate single-photon-counting in all 24 amplifiers (four amplifiers per detector) with a readnoise of σ N ∼ 0.18 e− rms pixel−1 after N samp = 400 samples, and we constrain the degree of nonlinearity to be ≲1% at low signal levels (0 e− to 50 e−). Clock-induced charge (CIC) remains an important issue when the Skipper CCD is configured to provide a large full-well capacity. We achieve a CIC rate of <1.45 × 10−3 e− pixel−1 frame−1 for a full-well capacity of ∼900 e−, which increases to a CIC rate of ∼3 e− pixel−1 frame−1 for full-well capacities ∼40,000–65,000 e−. We also perform conventional CCD characterization measurements such as charge transfer inefficiency (3.44 × 10−7 on average), dark current (∼2 × 10−4 e− pixel−1 s−1), photon transfer curves, cosmetic defects (<0.45% “bad” pixels), and charge diffusion (point-spread function < 7.5 μm) to verify that these properties are consistent with expectations from conventional p-channel CCDs used for astronomy. Furthermore, we provide the first measurements of the brighter-fatter effect and absolute quantum efficiency (≳80% between 450 and 980 nm; ≳90% between 600 and 900 nm) using Skipper CCDs.

show abstract

Proton Damage Comparison of an e2v Technologies n-channel and p-channel CCD204

Cited by 14 publications

References 21 publications

Postirradiation behavior of p-channel charge-coupled devices irradiated at 153 K

Postirradiation behavior of p-channel charge-coupled devices irradiated at 153 K

Charge transfer efficiency in a p-channel CCD irradiated cryogenically and the impact of room temperature annealing

Characterization and Optimization of Skipper CCDs for the SOAR Integral Field Spectrograph

Contact Info

Product

Resources

About