2016
DOI: 10.1117/1.jatis.2.2.026001
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Postirradiation behavior of p-channel charge-coupled devices irradiated at 153 K

Abstract: b e2v technologies plc, 106 Waterhouse Lane, Chelmsford, Essex, CM1 2QU, UK.Abstract. The displacement damage hardness that can be achieved using p-channel charge coupled devices (CCD) was originally demonstrated in 1997, and since then a number of other studies have demonstrated an improved tolerance to radiation-induced CTI when compared to n-channel CCDs.A number of recent studies have also shown that the temperature history of the device after the irradiation impacts the performance of the detector, linked… Show more

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Cited by 5 publications
(10 citation statements)
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“…The time between capture and release is dependent on the type of defect and the operational temperature, and is described by the emission time constant. Two different applications of the technique have been explored, the first can be used to identify the type of defect [5][6][19][20] and the second to provide insight into the CTI and provide a simple method of correction [17][18] , it the latter method that is the focus of this paper. It should also be possible to utilise the information about defect type and concentration to support a charge transport model which relies on these variables as inputs.…”
Section: Trap-pumping and Cti Mitigationmentioning
confidence: 99%
“…The time between capture and release is dependent on the type of defect and the operational temperature, and is described by the emission time constant. Two different applications of the technique have been explored, the first can be used to identify the type of defect [5][6][19][20] and the second to provide insight into the CTI and provide a simple method of correction [17][18] , it the latter method that is the focus of this paper. It should also be possible to utilise the information about defect type and concentration to support a charge transport model which relies on these variables as inputs.…”
Section: Trap-pumping and Cti Mitigationmentioning
confidence: 99%
“…Typically a proton irradiation performed to investigate post-irradiation performance for a space mission is performed at room temperature, however, based on the evidence from other studies looking into the performance of devices irradiated at cryogenic temperatures 3,[6][7][8][9][10][11][12][15][16][17] , this may not provide the conditions to allow appropriate minimisation of radiation induced CTI. This is because of the mobility of individual defects after the irradiation and their ability to interact with other defects to form different defects.…”
Section: Introductionmentioning
confidence: 99%
“…Therefore, immediately there is less concentration of impurities from which stable defects can be formed that could impact charge transfer. The radiation induced defects which increase Charge Transfer Inefficiency (CTI) in a p-channel CCD have been linked to the divacancy and other traps related to carbon and oxygen interstitials [4][5][6][7][8][11][12] . As there are less radiation induced defects in a p-channel CCD which have been shown to increase CTI and because they are formed in smaller quantities (the divacancy is a second order defect and boron defects have not been shown to impact CTE) when compared to an n-channel equivalent, p-channel CCDs are more hard to radiation induced CTI.…”
Section: Introductionmentioning
confidence: 99%
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