Proposal of an Embedded Nanogap Biosensor by a Graphene Nanoribbon Field‐Effect Transistor for Biological Samples Detection

Abstract

Herein, it is examined how a graphene nanoribbon field‐effect transistor (GNRFET) can be a useful nanoscale device, along with how to use an embedded nanogap inside a top gate oxide to form a biosensor. A streptavidin–biotin binding system with the dielectric constant of 2.1 is considered as a biological test sample for detection. Introducing the biological sample to the nanogap without a buffer solution modifies the electrostatic modulation in the graphene sheet, resulting in a change in the drain current. The order of change in the drain current is considered a criterion to measure the sensitivity of the proposed biosensor. A detailed investigation and discussion of the biasing conditions during the detection process reveal the optimal bias for the proposed biosensor to achieve a greater sensitivity, all while maintaining a desirable electrical performance.

A Compact Model of Gate Capacitance in Ballistic Gate-All-Around Carbon Nanotube Field Effect Transistors

“…The gate capacitance of CNFET is calculated using Equation (1) for which Cins is calculated with the help of Equation (2). By this analysis, the gate capacitance of CNFET comes out to be 24.3×10 -2 pF/cm.…”

“…The close match between the calculated and simulated results confirms the validity of the proposed model. various short channel effects [2] including source/drain charge sharing, drain-induced barrier lowering (DIBL), subsurface punch through and velocity saturation. Due to limitations of MOSFET, conventional nano-scale SOI MOSFET which uses novel configuration gives better electrical performance but the complexity of these devices pushes the need to find out an alternative of FET devices [3].…”

High speed pulse generators with electro-optic modulators based on different bit sequence for the digital fiber optic communication links

“…The bit error rate is enhanced in optical communication systems by using NRZ, RZ pulse generators with different optical modulation techniques [16][17][18][19][20]. NRZ/EAM, NRZ/MZM, RZ/EAM, and RZ/MZM are constructed by using optisystem simulation software in the presence of optical power variations from 15 dBm to 20 dBm in order to achieve the minimum BER values for different 4 bit sequence value of 1010, and 8 bit sequence value of 10101100 [21][22][23][24][25]. The Q-factor and BER values are investigated and stimulated in wavelength division multiplexing networks by using differential phase-shift keying modulation scheme [26][27][28][29][30].…”

Novel L‐shaped drain dual‐gateSiGe MOSFETforhigh‐frequency, low power applications

“…The introduction of new technologies is being investigated to maintain the rapid pace of MOSFET downscaling and push scaling beyond the limits anticipated by conventional planar device construction. Several technologies such as FinFET and other multi gate MOSFETs, SOI MOS Architecture, Tunnel FET(TFET), Negative Capacitance MOSFET(NCFET), Graphene Nanoribbon FET, ultra‐thin body and buried oxide field effect transistor (UTBB‐FET), and so on have been developed by the researchers over the past few decades to control short channel effects, enhance device performance and pave the way further for scaling 5–10 . These technologies have also been successful in reducing short channel effects to some extent.…”