New red oxide phosphors Y 2 O 3 :Eu 3ϩ ,Si 4ϩ and ͑Y,Gd͒ 2 O 3 :Eu 3ϩ ,Si 4ϩ ,Bi 3ϩ are synthesized by a coprecipitation method. Relative cathodoluminescence ͑CL͒ brightness at low voltages (р1 kV͒ is analyzed. At the low voltage excitation, luminance of the synthesized phosphors is higher than that of other commercially available red phosphors Y 2 O 2 S:Eu 3ϩ and Y 2 O 3 :Eu 3ϩ . In particular, the difference of relative brightness between the commercially available phosphors and the synthesized Y 2 O 3 :Eu 3ϩ ,Si 4ϩ is larger at low voltages (р500 V͒ than at higher voltages. The synthesized ͑Y,Gd͒ 2 O 3 :Eu 3ϩ ,Si 4ϩ ,Bi 3ϩ phosphor gives the same level of brightness as that of Y 2 O 3 :Eu 3ϩ ,Si 4ϩ at voltages greater than 500 V. ͑Y,Gd͒ 2 O 3 :Eu 3ϩ ,Si 4ϩ ,Bi 3ϩ is coated with a conductive material SnO 2 :Eu 3ϩ . The coating of SnO 2 :Eu 3ϩ shows a considerable improvement in brightness without a color shift. The excellent luminescence characteristics of ͑Y,Gd͒ 2 O 3 :Eu 3ϩ ,Si 4ϩ ,Bi 3ϩ coated with SnO 2 :Eu 3ϩ , studied using field emitter arrays, suggests that our synthesized phosphor is practically applicable to field emission display devices.