A polyvinyl alcohol-slurry screening technology of phosphors was studied for field emission displays with a resolution up to supervideo graphics adapter. Phosphor lines were successfully patterned as narrow as 25 μm on 6 in. glass substrates. Process conditions such as spin coating speeds, exposure time, and shadow mask layout for photolithography were related to thickness and line resolutions of phosphor. Luminance characteristics of phosphors were optimized in terms of firing processes. For ZnS:Cu, Al, ZnS:Ag, Cl, and Y2O3:Eu phosphors, the firing temperature was optimized to be 400 °C. The nitrogen ambient during the cooling process improves the stability of phosphor surface.
New red oxide phosphors Y 2 O 3 :Eu 3ϩ ,Si 4ϩ and ͑Y,Gd͒ 2 O 3 :Eu 3ϩ ,Si 4ϩ ,Bi 3ϩ are synthesized by a coprecipitation method. Relative cathodoluminescence ͑CL͒ brightness at low voltages (р1 kV͒ is analyzed. At the low voltage excitation, luminance of the synthesized phosphors is higher than that of other commercially available red phosphors Y 2 O 2 S:Eu 3ϩ and Y 2 O 3 :Eu 3ϩ . In particular, the difference of relative brightness between the commercially available phosphors and the synthesized Y 2 O 3 :Eu 3ϩ ,Si 4ϩ is larger at low voltages (р500 V͒ than at higher voltages. The synthesized ͑Y,Gd͒ 2 O 3 :Eu 3ϩ ,Si 4ϩ ,Bi 3ϩ phosphor gives the same level of brightness as that of Y 2 O 3 :Eu 3ϩ ,Si 4ϩ at voltages greater than 500 V. ͑Y,Gd͒ 2 O 3 :Eu 3ϩ ,Si 4ϩ ,Bi 3ϩ is coated with a conductive material SnO 2 :Eu 3ϩ . The coating of SnO 2 :Eu 3ϩ shows a considerable improvement in brightness without a color shift. The excellent luminescence characteristics of ͑Y,Gd͒ 2 O 3 :Eu 3ϩ ,Si 4ϩ ,Bi 3ϩ coated with SnO 2 :Eu 3ϩ , studied using field emitter arrays, suggests that our synthesized phosphor is practically applicable to field emission display devices.
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