Enhancing and spectrally controlling light absorption is of great practical and fundamental importance. In optoelectronic devices consisting of layered semiconductors and metals, absorption has traditionally been manipulated with the help of Fabry-Pérot resonances. Even further control over the spectral light absorption properties of thin films has been achieved by patterning them into dense arrays of subwavelength resonant structures to form metafilms. As the next logical step, we demonstrate electrical control over light absorption in metafilms constructed from dense arrays of actively tunable plasmonic cavities. This control is achieved by embedding indium tin oxide (ITO) into these cavities. ITO affords significant tuning of its optical properties by means of electrically-induced carrier depletion and accumulation. We demonstrate that particularly large changes in the reflectance from such metafilms (up to 15% P) can be achieved by operating the ITO in the epsilon-near-zero (ENZ) frequency regime where its electrical permittivity changes sign from negative to positive values.

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Accumulating electrons in transparent conductive oxides such as indium tin oxide (ITO) can induce an "epsilon-near-zero" (ENZ) in the spectral region near the important telecommunications wavelength of λ = 1.55 μm. Here we theoretically demonstrate highly effective optical electro-absorptive modulation in a silicon waveguide overcoated with ITO. This modulator leverages the combination of a local electric field enhancement and increased absorption in the ITO when this material is locally brought into an ENZ state via electrical gating. This leads to large changes in modal absorption upon gating. We find that a 3 dB modulation depth can be achieved in a non-resonant structure with a length under 30 μm for the fundamental waveguide modes of either linear polarization, with absorption contrast values as high as 37. We also show a potential for 100 fJ/bit modulation, with a sacrifice in performance.

We present omnidirectional near-unity absorption of light in an ultrathin planar semiconductor layer on a metal substrate. Using full-field simulations and a modal analysis, it is shown that more than 98% of the incident light energy can be absorbed in a mere 12 nm thick Ge layer on a Ag substrate at the wavelength of 625 nm over a wide range of angles (80% absorption up to 66° in the transverse magnetic and 67° in the transverse electric polarizations). The physical origin of such remarkable absorption properties is the coupling of incident light to the Brewster mode supported by the structure. The modal dispersion connects several critical coupling points in a dispersion diagram at which the absorption is unity and exhibits a virtually flat dispersion relation for both polarizations, resulting in omnidirectional, near-unity absorption. Potential applications of this simple, planar geometry such as photodetectors and solar cells made from various semiconductor materials are also discussed along with feasible charge-extracting structures and performance estimates.

Semiconductor heterostructures play a vital role in photonics and electronics. They are typically realized by growing layers of different materials, complicating fabrication and limiting the number of unique heterojunctions on a wafer. In this Letter, we present single-material nanowires which behave exactly like traditional heterostructures. These pseudoheterostructures have electronic band profiles that are custom-designed at the nanoscale by strain engineering. Since the band profile depends only on the nanowire geometry with this approach, arbitrary band profiles can be individually tailored at the nanoscale using existing nanolithography. We report the first experimental observations of spatially confined, greatly enhanced (>200×), and wavelength-shifted (>500 nm) emission from strain-induced potential wells that facilitate effective carrier collection at room temperature. This work represents a fundamentally new paradigm for creating nanoscale devices with full heterostructure behavior in photonics and electronics.