Properties of thick SiO2/Si structure formed at 120°C by use of two-step nitric acid oxidation method

Imai, Shigeki; Mizushima, Shigeaki; Asuha,; Kim, W.-B.; Kobayashi, Hikaru

doi:10.1016/j.apsusc.2008.03.025

Cited by 23 publications

(13 citation statements)

References 30 publications

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“…oxidation in boiling azeotropic HNO 3 [24,25]]. Ultra-thin NAOS oxides were utilized for interface conditioning in Si devices and solar cells after subsequent defect passivation by aqueous HCN solution at room temperature [26] and post metallization annealing processes (PMA) [27]. To minimize chemical consumption and the number of process steps, in this study also a dissolved solution of hydrochloric acid (HCl) in ultra-pure deionized water [28,29] was investigated as an alternative to oxidation in concentrated solutions.…”

Section: Introductionmentioning

confidence: 99%

Ultra-thin silicon oxide layers on crystalline silicon wafers: Comparison of advanced oxidation techniques with respect to chemically abrupt SiO 2 /Si interfaces with low defect densities

Stegemann

Gad

Balamou

et al. 2017

Applied Surface Science

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Section: Introductionmentioning

confidence: 99%

Ultra-thin silicon oxide layers on crystalline silicon wafers: Comparison of advanced oxidation techniques with respect to chemically abrupt SiO 2 /Si interfaces with low defect densities

Stegemann

Gad

Balamou

et al. 2017

Applied Surface Science

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“…biomedicine, photo-electrochemistry, photonics, sensors and thin-film-transistors. [37][38][39][40][41][42][43][44][45] The atomic layer deposition (ALD) technique is widely used, nowadays, to manufacture insulator-silicon junctions for many devices. ALD is particularly suitable for the LT and 3-D technologies, as the growth temperature of conformal ALD films is often clearly below 450 o C. After cleaning the Si surface (i.e.…”

Section: Introductionmentioning

confidence: 99%

Decreasing Interface Defect Densities via Silicon Oxide Passivation at Temperatures Below 450 °C

Rad

Lehtiö

Mack

et al. 2020

ACS Appl. Mater. Interfaces

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Low-temperature (LT) passivation methods (< 450 o C) for decreasing defect densities in the material combination of silica (SiOx) and silicon (Si) are relevant to develop a diverse technology (e.g. electronics, photonics, medicine), where defects of SiOx/Si cause losses and malfunctions. Many device structures contain the SiOx/Si interface(s), of which defect densities cannot be decreased by the traditional, beneficial high temperature treatment (> 700 o C). Therefore, the LT passivation of SiOx/Si has been, since long, a research topic to improve applications performance. Here, we demonstrate that a LT (< 450 o C) ultrahigh-vacuum (UHV) treatment is a potential method that can be combined with current state-of-theart processes in a scalable way, to decrease the defect densities at the SiOx/Si interfaces. The studied LT-UHV approach includes a combination of wet chemistry followed by UHV-based heating and pre-oxidation of silicon surfaces. The controlled oxidation during the LT-UHV treatment is found to provide an until now not reported crystalline Si oxide phase. This crystalline SiOx phase can explain the observed decrease in the defect density by halve.Furthermore, the LT-UHV treatment can be applied in a complementary, post-treatment way to ready components to decrease electrical losses. The LT-UHV treatment has been found to decrease the detector leakage current by factor of two.

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“…It has been claimed that HNO 3 possesses a much higher oxidizing activity than oxygen and water molecules (Imamura et al, 2006) and frequently used as oxidizing agent in Si wet etching process along with hydrofluoric (HF) acid (Tadigadapa, 2009;Yamamura and Mitani, 2008). Besides, HNO 3 solution was widely used to oxidized Si (Imai et al, 2008;Kobayashi et al, 2005) or SiC (Imai et al, 2006;Im et al, 2008), but vaporized HNO 3 was only being reported to oxidized Si (Imamura et al, 2006(Imamura et al, , 2009Kim et al, 2010), respectively. In HNO 3 solution based oxidation method, Si or SiC substrate was immersed in 40 wt.% of HNO 3 aqueous solutions followed by that in 68 wt.% of HNO 3 aqueous at azeotropic boiling temperature of 1218C for 3 hours.…”

Section: Introductionmentioning

confidence: 99%

Effects of wet-oxidized 4H-SiC annealed in HNO₃/H₂O vapour

Poobalan

Moon

Kim

et al. 2013

Microelectronics International

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Purpose -The high density of defects mainly attributed to the presence of silicon oxycarbides, residual C clusters, Si-and C-dangling bonds at or near the SiO 2 /SiC interface degrades the performance of metal-oxide-semiconductor (MOS) devices. In the effort of further improving the quality and enhancement of the SiC oxides thickness, post-oxidation annealed by a combination of nitric acid (HNO 3 ) and water (H 2 O) vapor technique on thermally grown wet-oxides is introduced in this work. The paper aims to discuss these issues. Design/methodology/approach -A new technique of post-oxidation annealing (POA) on wet-oxidized n-type 4H-SiC in a combination of HNO 3 and H 2 O vapor at various heating temperatures (708C, 908C and 1108C) of HNO 3 solution has been introduced in this work. Findings -It has been revealed that the samples annealed in HNO 3 þ H 2 O vapour ambient by various heating temperatures of HNO 3 solution; particularly at 1108C is able to produce oxide with lower interface-state density and higher breakdown voltage as compared to wet-oxidized sample annealed in N2 ambient. The substrate properties upon oxide removal show surface roughness reduces as the heating temperature of HNO 3 solution increases, which is mainly attributed due to the significant reduction of carbon content at the SiC/SiO 2 interface by CvN passivation and CO or CO 2 out-diffusion. Originality/value -Despite being as a strong oxidizing agent, vaporized HNO 3 can also be utilized as nitridation and hydrogen passivation agent in high temperature thermal oxidation ambient and these advantages were demonstrated in 4H-SiC.

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Properties of thick SiO2/Si structure formed at 120°C by use of two-step nitric acid oxidation method

Cited by 23 publications

References 30 publications

Ultra-thin silicon oxide layers on crystalline silicon wafers: Comparison of advanced oxidation techniques with respect to chemically abrupt SiO 2 /Si interfaces with low defect densities

Ultra-thin silicon oxide layers on crystalline silicon wafers: Comparison of advanced oxidation techniques with respect to chemically abrupt SiO 2 /Si interfaces with low defect densities

Decreasing Interface Defect Densities via Silicon Oxide Passivation at Temperatures Below 450 °C

Effects of wet-oxidized 4H-SiC annealed in HNO₃/H₂O vapour

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Properties of thick SiO2/Si structure formed at 120°C by use of two-step nitric acid oxidation method

Cited by 23 publications

References 30 publications

Ultra-thin silicon oxide layers on crystalline silicon wafers: Comparison of advanced oxidation techniques with respect to chemically abrupt SiO 2 /Si interfaces with low defect densities

Ultra-thin silicon oxide layers on crystalline silicon wafers: Comparison of advanced oxidation techniques with respect to chemically abrupt SiO 2 /Si interfaces with low defect densities

Decreasing Interface Defect Densities via Silicon Oxide Passivation at Temperatures Below 450 °C

Effects of wet-oxidized 4H-SiC annealed in HNO3/H2O vapour

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Effects of wet-oxidized 4H-SiC annealed in HNO₃/H₂O vapour