Properties of the Organic-on-Inorganic Semiconductor Barrier Contact Diodes In/PTCDI/p-Si and Ag/CuPc/p-Si

Antohe, S.; Tomozeiu, N.; Gogonea, S.

doi:10.1002/pssa.2211250138

Cited by 88 publications

(43 citation statements)

References 8 publications

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“…The electrical properties of metal/semiconductor (MS) structures can be modified by organic semiconductors when an organic layer is inserted between the inorganic semiconductor and metal. The studies made in literature have shown that the barrier height could be either increased or decreased by using organic thin layer on inorganic semiconductor [1][2][3][4][5][6][7][8][9][10][11]. New electrical properties of the MS contacts can be promoted by means of the choice of suitable organic semiconductors [1].…”

Section: Introductionmentioning

confidence: 99%

Electronic properties of Al/DNA/p-Si MIS diode: Application as temperature sensor

Güllü

Türüt

2011

Journal of Alloys and Compounds

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Section: Introductionmentioning

confidence: 99%

Electronic properties of Al/DNA/p-Si MIS diode: Application as temperature sensor

Güllü

Türüt

2011

Journal of Alloys and Compounds

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“…Therefore, most of the reported studies of semiconductor-small molecules hybrid cells are related to Pc and Ph compounds. In particular, pSi/CuPc [32], Si/ZnPc [33,34], nSi/MgPc [35], pSi/NiPc [36], nGaAs/CuPc [37] and nSi/TTP [38] ( Figure 2) hybrid solar cells were reported in literature with conversion efficiencies in the range of 1-3.5%. An additional advantage of phtalocyamines is their exceptional chemical stability.…”

Section: Semiconductor-small Molecules Solar Cellsmentioning

confidence: 74%

Organic / IV, III-V Semiconductor Hybrid Solar Cells

Ong

Levitsky

2010

Energies

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Abstract:We present a review of the emerging class of hybrid solar cells based on organic-semiconductor (Group IV, III-V), nanocomposites, which states separately from dye synthesized, polymer-metal oxides and organic-inorganic (Group II-VI) nanocomposite photovoltaics. The structure of such hybrid cell comprises of an organic active material (p-type) deposited by coating, printing or spraying technique on the surface of bulk or nanostructured semiconductor (n-type) forming a heterojunction between the two materials. Organic components include various photosensitive monomers (e.g., phtalocyanines or porphyrines), conjugated polymers, and carbon nanotubes. Mechanisms of the charge separation at the interface and their transport are discussed. Also, perspectives on the future development of such hybrid cells and comparative analysis with other classes of photovoltaics of third generation are presented.

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“…15,17,18 The same mechanism has been suggested as origin for the reverse current in organic/inorganic diodes on n-GaAs 19 and p-Si substrates. 20 According to Ref. 15, the generation current depends on the width of the depletion zone w Si and the intrinsic carrier density n i of the substrate semiconductor.…”

Section: Resultsmentioning

confidence: 99%

Electrical properties of pSi/[6,6] phenyl-C61 butyric acid methyl ester/Al hybrid heterojunctions: Experimental and theoretical evaluation of diode operation

Bednorz

Fromherz

Matt

et al. 2012

Journal of Applied Physics

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Effect of heterostructure design on current-voltage characteristics in AlxGa1−xN/GaN double-barriers resonant tunneling diode J. Appl. Phys. 112, 114305 (2012) Correlation between deep-level defects and turn-on recovery characteristics in AlGaN/GaN hetero-structures J. Appl. Phys. 112, 106103 (2012) Observation of the generation of stacking faults and active degradation measurements on off-axis and on-axis 4H-SiC PiN diodes Appl. Phys. Lett. 101, 222111 (2012) Reverse Schottky gate current in AlGaN-GaN high-electron-mobility-transistors J. Appl. Phys. 112, 094508 (2012) Additional information on J. Appl. Phys. In this work, we analyze electrically the Al/p-Si/[6,6] phenyl-C61 butyric acid methyl ester/Al hybrid heterojunction. The barrier height at the p-Si/PCBM interface corresponding to the difference between Si valence band edge and the lowest unoccupied molecular orbital energy level of PCBM is studied with current-voltage (J-V) and capacitance-voltage (C-V) methods and determined to be ' 0:55 eV. This value is in agreement with the onset energy of spectrally resolved photocurrent measurements presented in a previous publication [Matt et al., Adv. Mater. 22, 647 (2010)]. For the J-V characteristics, a thorough model based on an interface generation-recombination current is proposed. All relevant energy levels for this model are obtained experimentally. As origin of the large reverse current, the thermal generation of charge carriers throughout the Si depletion region is identified by the thermal activation measurements. V C 2012 American Institute of Physics.

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Properties of the Organic-on-Inorganic Semiconductor Barrier Contact Diodes In/PTCDI/p-Si and Ag/CuPc/p-Si

Cited by 88 publications

References 8 publications

Electronic properties of Al/DNA/p-Si MIS diode: Application as temperature sensor

Electronic properties of Al/DNA/p-Si MIS diode: Application as temperature sensor

Organic / IV, III-V Semiconductor Hybrid Solar Cells

Electrical properties of pSi/[6,6] phenyl-C61 butyric acid methyl ester/Al hybrid heterojunctions: Experimental and theoretical evaluation of diode operation

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