Photovoltaic devices based on single-walled carbon nanotubes (SWNTs) and n-silicon heterojunctions have been fabricated by a spray deposition process. We provide direct evidence that nanotubes serve as an active photosensing material involved directly in the photon absorption process as well as contributing to charge separation, transport and collection. The characteristic band of the SWNT band in the photoconductivity spectrum matches the S(11) absorption band of semiconducting SWNTs of 7,6 chirality. Centrifugation of the SWNTs provides two fractions. The sediment fraction exhibits a conversion efficiency ( approximately 1.7%) higher by a factor of eight compared to the supernatant fraction. SEM images and conductivity measurements show that the SWNT network morphology of the sediment fraction has longer and thicker nanotube bundles forming highly porous films, accounting for the enhanced conductivity and higher transparency.

Abstract:We present a review of the emerging class of hybrid solar cells based on organic-semiconductor (Group IV, III-V), nanocomposites, which states separately from dye synthesized, polymer-metal oxides and organic-inorganic (Group II-VI) nanocomposite photovoltaics. The structure of such hybrid cell comprises of an organic active material (p-type) deposited by coating, printing or spraying technique on the surface of bulk or nanostructured semiconductor (n-type) forming a heterojunction between the two materials. Organic components include various photosensitive monomers (e.g., phtalocyanines or porphyrines), conjugated polymers, and carbon nanotubes. Mechanisms of the charge separation at the interface and their transport are discussed. Also, perspectives on the future development of such hybrid cells and comparative analysis with other classes of photovoltaics of third generation are presented.

We report a room temperature mid-infrared photodetector based on a carbon nanotube-silicon heterojunction nanostructure. The observed mid-infrared band (8–12 μm) in the photocurrent spectrum is consistent with the estimated band gap energy of semiconducting multiwall nanotubes (15 to 30 nm diameter). The fast response time (16 ms) and small temperature change (∼10−8 K) upon infrared light suggest that the photocurrent response is not due to bolometric effect. We determined that the primary mechanism of the photocurrent in this spectral range is associated with photon absorption of semiconducting multiwalled carbon nanotubes followed by charge separation at the interface, their transport, and collection at the external electrodes.

With wide application of low-dielectric constant (low-k) dielectric materials in multilevel VLSI circuits, the long-term reliability of such materials is rapidly becoming one of the most critical challenges for technology development. Among all the reliability issues, low4 time dependent dielectric breakdown (TDDB) is commonly considered a crucial problem. In this study, the effect of process variations on chemical-vapor deposited (CVD), carbon doped oxide dielectrics comprised of Si, C, 0, and H (SiCOH) TDDB degradation at the 65nm technology node is investigated. SiCOH TDDB is found to be sensitive to all aspects of integration.Based on extensive experimental data, an electrochemical-reactioninduced, three-step degradation model is proposed to explain the SiCOH dielectric breakdown process. Finally, we demonstrate that with careful process and materials optimization, a superior SiCOH TDDB performance at the 65nm technology node can be achieved for 300" fabrication. The projected lifetime, based on a conservative modeling approach and aggressive test structure is far beyond the most stringent reliability target. [

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