Properties of Selective-Area-Growth GaN Grown on Various Buffered Si(111) Substrates by HVPE

Shin, Dong Hoon; Bae, Minkun; Yi, Shaohua; Na, J. H.; Lee, K. H.; Taylor, Robert A.; Doh, Sih-Hong; Park, S. H.

doi:10.3938/jkps.51.220

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2016

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“…We call these fins m -plane fins from now on. Besides the m -plane sidewalls, the polar (0001) and semipolar (mostly {11̅01}) planes occurred, as also reported in other publications. , The semipolar facets dominate the GaN fin structures observed in our case (see SEM image of cross-section in Figure inset). Reasons for the large semipolar facets could be the relatively slow growth rate of the semipolar facet , and the large mask line widths compared to the experiments by Yeh et al For high V/III ratios, similar results are published, especially for the use of large widths of the mask openings …”

Section: Resultssupporting

confidence: 89%

High Aspect Ratio GaN Fin Microstructures with Nonpolar Sidewalls by Continuous Mode Metalorganic Vapor Phase Epitaxy

Hartmann

Steib

Zhou

et al. 2016

Crystal Growth & Design

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Three-dimensional GaN micro-and nanorods with high aspect ratio have recently gained substantial interest in LED research, due to their reduced defect density, their non-polar sidewalls and their increased active area. Here, we present an alternative geometry for high aspect ratio 3D nanostructures: vertically standing GaN "walls", so called GaN fins. With high aspect ratios, these GaN fins exhibit the same interesting characteristics as their rod counterparts mentioned above. Beyond that, due to their geometry, the respective material analysis and device

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