Properties of schottky barrier diodes and ohmic contacts on znte single crystal

Saji, Manabu; Matsumoto, K.; Fujimoto, Hiroshi

doi:10.1002/eej.4390980601

Cited by 5 publications

(4 citation statements)

References 10 publications

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“…Similar shifts, although to a varying degree, were observed for the P-doped mixed crystals. 15 Similar results are obtained for mixed crystals. A shift towards lower energy indicates a higher value of v s .…”

Section: Spectral Response Of In/mgznte Barrierssupporting

confidence: 74%

“…15 Moreover, the presence of a higher density of interface states leads to an enhancement of the effective value of the surface recombination velocity v s , which may explain the shift in the high energy edge of the photoresponse. This may cause the barrier at the surface of the semiconductor to be pinned at a value ͑⌽ B ͒ which is smaller than that of an ideal system ͑⌽ Bn ͒.…”

Section: Effect Of P On the In/mgznte:p Interfacementioning

confidence: 99%

“…29 Also, the concentration of P added to the melt during the growth of ZnTe:P was found to be systematically more than an order of magnitude higher than that of the total electrically active impurities (N A ϩN D ). Assuming a thin insulating interfacial layer of atomic dimensions ͑tϭ5 Å͒, 15 one can calculate an order of magnitude of the density of interface states D ss using The presence of such a high concentration of P in Te precipitates, where it may be involved in compounds such as P 6 Te 5 , may contribute to factors affecting the nature of the interfacial layer produced by intermixing between In and MgZnTe during Schottky barrier formation, 30 and to the disordering involved.…”

Section: Effect Of P On the In/mgznte:p Interfacementioning

confidence: 99%

“…15 The nature of the interface plays an essential role in determining the characteristics of Schottky barriers and is certainly at the origin of the dispersion in the literature values of ⌽ B and the index of interface behavior S in the II-IV tellurides ZnTe ͑Refs. Using the approximations pϭN A , ⑀ s ϭ10.1⑀ 0 ͑dielectric constant of ZnTe͒, m*ϭ0.68m 0 ͑effective mass of ZnTe͒, V n and ⌬⌽ were calculated in the usual way and used to evaluate Q sc .…”

Section: Effect Of P On the In/mgznte:p Interfacementioning

confidence: 99%

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Phosphorus impurities in MgxZn1−xTe alloys

Akkad¹,

Naby²,

Omar³

1995

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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P-doped Mg x Zn 1Ϫx Te alloys ͑0рxр0.28͒ are characterized using room-temperature electrical, optical, and photoelectric measurements. The electrical properties ͑hole concentration and mobility͒ indicate an increasing compensation with the increase of Mg content. The donor impurities are attributed to P. The optical absorption spectrum exhibits a peak situated at 1.06 eV, independent of composition. Supportive evidence is obtained for the assignment of this peak to electronic transitions in the shallow P acceptor level originating from the spin-orbit band. The perturbations in the local potential lead to a broadening of the absorption peak and to the appearance of density-of-states tails at the edges of the principal bands. The spectral response of indium surface barriers on undoped and P-doped crystals is investigated. It is found that P doping leads to a lowering of the barrier height and to a shift in the high-energy edge of the spectral response toward lower energies. The latter is attributed to the presence of a thin insulating interfacial layer and a high density of interface states in the P-doped contacts. It is suggested that P has a role in determining the characteristics of the interface.

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Section: Spectral Response Of In/mgznte Barrierssupporting

confidence: 74%

Section: Effect Of P On the In/mgznte:p Interfacementioning

confidence: 99%