Ohmic contacts to zinc telluride and their high temperature behavior

Luqman, Monis; Brown, W.D.; Hajghassem, Hassan

doi:10.1007/bf02654299

Cited by 7 publications

(3 citation statements)

References 6 publications

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“…The band gap of bulk ZnTe is 2.25 eV, , having the conduction and valence band edges at −1.52 and +0.73 V vs NHE, , respectively. Bulk CdSe has a band gap of 1.74 eV, , and its respective conduction and valence band edges are at −0.30 and +1.44 V vs NHE. ,, This gives conduction and valence band offset energies of U e = 1.22 eV and U h = 0.71 eV, respectively, and an energy alignment that favors the localization of photogenerated electrons in the CdSe shell and the holes in the ZnTe core.…”

Section: Resultsmentioning

confidence: 99%

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Effects of Inhomogeneous Shell Thickness in the Charge Transfer Dynamics of ZnTe/CdSe Nanocrystals

Jiang

Kelley

2012

J. Phys. Chem. C

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ZnTe/CdSe core/shell nanocrystals with varying ZnTe core sizes and CdSe shell thickness have been synthesized. The absorption onset and photoluminescence (PL) wavelengths vary from the mid-visible to the near-infrared range. The conduction and valence band energies as well as bandgap and electron–hole overlap are accurately described by an effective mass approximation model. These particles are type-II, with the hole confined to the ZnTe core. PL quenching dynamics of ZnTe/CdSe nanocrystals having various shell thicknesses by hole acceptors are studied. A model has been developed to describe the interfacial charge transfer of the core-confined holes to adsorbed acceptors. This model considers a Poisson distribution of acceptor numbers and includes shell thickness variability. The shell thickness variability occurs on each particle and corresponds to surface roughness. The shell local thickness is assumed to have a Poisson distribution of numbers of layers.

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Section: Resultsmentioning

confidence: 99%

“…The band gap of bulk ZnTe is 2.25 eV, 60,61 having the conduction and valence band edges at −1.52 and +0.73 V vs NHE, 16,25 respectively. Bulk CdSe has a band gap of 1.74 eV, 16,62 and its respective conduction and valence band edges are at −0.30 and +1.44 V vs NHE.…”

Section: ■ Introductionmentioning

confidence: 99%

Effects of Inhomogeneous Shell Thickness in the Charge Transfer Dynamics of ZnTe/CdSe Nanocrystals

Jiang

Kelley

2012

J. Phys. Chem. C

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“…The electrical property was measured by the van der Pauw method. Electrodes were prepared on four corners of around 10 × 10 mm 2 wafers by the electroless-gold plating [11].…”

Section: Methodsmentioning

confidence: 99%

ZnTe single crystal growth by the liquid encapsulated pulling method

Asahi¹,

Yabe²,

Satô³

2004

Physica Status Solidi (b)

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Large diameter ZnTe single crystals were grown by the liquid-encapsulated pulling method using a double crucible. Crystals of around 80 mm in diameter and 40 mm in length were reproducibly obtained by this method. Both 〈100〉 and 〈110〉 crystals were successfully grown. The strong facet growth was observed when the shoulder part of the bulk was formed. Rectangular facet growth was observed in 〈100〉 growth and hexagonal facet growth was observed in 〈110〉 growth. The etch pit density of the grown crystal was lower than 10000 cm -2 and the strain in the crystal was lower than that of modified liquid encapsulated Kyropoulos method.1 Introduction ZnTe is a promising material for pure-green light emitting diodes (LEDs), green laser diodes (LDs) [1, 2] and electro-optic (EO) devices [3][4][5]. In order to develop these ZnTe based applications, large diameter single crystal substrates are necessary. It is, however, well known that growing II-VI semiconductor single crystals is very difficult owing to inferior physical properties [6]. The liquid encapsulated Czochralski (LEC) method has not been successfully applied to II-VI materials. We believe that the large temperature gradient of the LEC method [7] causes the difficulty of the single crystal growth owing to the the instability of the melt and generation of crystal defects. In our previous work, ZnTe single crystals were successfully obtained by modified liquid encapsulated Kyropoulos [8] (LEK) method using the small temperature gradient [9]. Our LEK crystals, however, had large strain and were sometimes cracked because of the difference in the thermal expansion coefficient between ZnTe and the encapsulant since the grown crystals were cooled in the encapsulant.In order to solve this problem, we tried to grow ZnTe single crystals by the liquid-encapsulated pulling method using a double crucible as the new growth method improved from the LEK and the LEC methods. In this paper, crystal growth of ZnTe by the double-crucible liquid-encapsulated pulling (DCP) method is reported.

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Growth of large-diameter ZnTe single crystals by liquid-encapsulated melt growth methods

Asahi

Yabe

Satô

2004

Journal of Elec Materi

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The 80-mm-diameter ZnTe single crystals were successfully obtained by the liquid-encapsulated Kyropoulos (LEK) method. Both Ͻ100Ͼ-and Ͻ110Ͼ-oriented single crystals were reproducibly grown by using ZnTe seed crystals. Furthermore, 80-mm-diameter, Ͻ100Ͼ and Ͻ110Ͼ ZnTe single crystals were obtained by the pulling method. The etch pit densities (EPDs) of the grown crystals by the LEK and pulling methods were lower than 10,000 cm Ϫ2 . The strain in the grown crystals by the pulling method was lower than that of LEK crystals.

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Ohmic contacts to zinc telluride and their high temperature behavior

Cited by 7 publications

References 6 publications

Effects of Inhomogeneous Shell Thickness in the Charge Transfer Dynamics of ZnTe/CdSe Nanocrystals

Effects of Inhomogeneous Shell Thickness in the Charge Transfer Dynamics of ZnTe/CdSe Nanocrystals

ZnTe single crystal growth by the liquid encapsulated pulling method

Growth of large-diameter ZnTe single crystals by liquid-encapsulated melt growth methods

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