Growth of large-diameter ZnTe single crystals by liquid-encapsulated melt growth methods

Asahi, Toshiaki; Yabe, Takayuki; Satô, Kenji

doi:10.1007/s11664-004-0061-6

Cited by 8 publications

(3 citation statements)

References 9 publications

(7 reference statements)

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“…Nakagawa et al [37] showed that their etchants were effective at B-face of CdTe, but Fewster [38] claimed that these etchants were actually effective at the A-face of CdTe which was also confirmed with XRD studies [39]. Some studies, used Nakagawa solutions with different ratio of HF:H 2 O 2 :H 2 O to calculate the etch pit density (EPD) on the ZnTe films [40].…”

Section: Resultsmentioning

confidence: 95%

Epitaxial characteristics of MBE-grown ZnTe thin films on GaAs (211)B substrates

Ozceri

Tarhan

2019

Appl. Phys. A

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Highly crystalline ZnTe thin films were grown on GaAs (211)B substrates by molecular beam epitaxy (MBE) for potential applications such as MCT detectors and optoelectronic devices. We investigated the effects of Te to Zn (VI/II) flux ratio on the quality of ZnTe films in terms of crystal orientation, elemental composition, surface roughness, and dislocation density. Atomic concentrations of Zn, Te, and oxygen complexes due to oxygen contamination on the film surfaces were analyzed by X-ray photoelectron spectroscopy. X-ray double crystal rocking curve full width half maximum (FWHM) of ZnTe (422) peak was observed as 233 arcseconds for a 1.66 μm thick film, which indicates high crystallinity. Wet chemical etching was applied to the films to quantify the crystal quality by calculating etch pit densities (EPD) from scanning electron microscope images. A very low EPD value of 1.7 × 10 7 cm −2 was measured. Additionally, the root mean square roughness values, obtained from atomic force microscopy topography images were in the range of 10-25 nm. These values were supported by FWHM values of red green blue color intensity histograms obtained from Nomarski Microscope images. The results of our analyses indicate that the VI/II flux ratios of 4 and 4.5 produce the best quality ZnTe films on GaAs (211)B substrates.

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Section: Resultsmentioning

confidence: 95%

Epitaxial characteristics of MBE-grown ZnTe thin films on GaAs (211)B substrates

Ozceri

Tarhan

2019

Appl. Phys. A

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“…However, the growth is conducted with following differences from the CZ method [ 91 ] : 1) complete crystallization of the melt in the crucible is carried out; 2) the final shape of the crystal is defined by the shape of the crucible; 3) the seed is water cooled; 4) rotation of the seed takes part only at the beginning of the growth; 5) a slow pulling of the seed up is performed only at the initial part of the growth followed by controlled cooling of the system; and 6) pulling is stopped when the crystal reaches bottom of the crucible. In this way, the single crystals of various sizes (small to large) of semiconductors, for example, ZnTe, [ 92 ] sapphire, [ 93 ] including halides such as CsBr (9 inch diam. ), [ 94 ] KX:Cu (X ═ Cl, Br, I), [ 95 ] or LiF, [ 96 ] were prepared.…”

Section: Bulk Crystal Growth Of Halide Materialsmentioning

confidence: 99%

Advanced Halide Scintillators: From the Bulk to Nano

Vaněček

Děcká

Mihóková

et al. 2022

Advanced Photonics Research

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Halide scintillators have been playing a crucial role in the detection of ionizing radiation since the discovery of scintillation in NaI:Tl in 1948. The discovery of NaI:Tl motivated the research and development (R&D) of halide scintillators, resulting in the development of CsI:Tl, CsI:Na, CaF2:Eu, etc. Later, the R&D shifted toward oxide materials due to their high mechanical and chemical stability, good scintillation properties, and relative ease of bulk single‐crystal growth. However, the development in crystal growth technology allows for the growth of high‐quality single crystals of hygroscopic and mechanically fragile materials including SrI2 and LaBr3. Scintillators based on these materials exhibit excellent performance and push the limits of inorganic scintillators. These results motivate intense research of a large variety of halide‐based scintillators. Moreover, materials based on lead halide perovskites find applications in the fields of photovoltaics, solid‐state lighting, and lasers. The first studies show also the significant potential of lead halide perovskites as ultrafast scintillators in the form of nanocrystals. The purpose of this review is to summarize the R&D in the field of halide scintillators during the last decade and highlight perspectives for future development.

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“…[8,9] In order to obtain ZnTe crystal from the standard Zn: Te = 1:1 mole ratio solution, various techniques have been developed in the past, such as vertical gradient freezing method, vertical Bridgman method, liquid encapsulated kyropoulos method, liquid-encapsulated vertical gradient freezing method, and so on. [10][11][12][13][14] Nevertheless, the ZnTe crystals prepared via these techniques are usually deviate from stoichiometric ratio and the reproduction of large size crystal is poor. In recent years, an interesting Te flux method was explored which has several outstanding advantages compared to the above methods: i) the crystal growth temperature can be sharply reduced; ii) ZnTe crystal with standard 1:1 composition can be achieved; iii) the apparatus for crystal growth is much simple and inexpensive.…”

Section: Introductionmentioning

confidence: 99%

Growth of ZnTe Semiconductor Crystal Via a Te Flux Zone Melting Method and Characterization of Its Properties

Jin

Zheng

et al. 2022

Cryst. Res. Technol.

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In this work, a kind of II;-VI group ZnTe semiconductor crystal is successfully grown using a Te flux zone melting method from Zn: Te = 3: 7 mole ratio solution. The crystal has standard F43m cubic space group and the a/b/c lattice constants are all calculated to be 6.105 Å. Energy dispersive spectroscopy analysis confirms it has quasistoichiometric ratio and the Zn/Te elements are distributed in the material homogeneously. The polished 1.0 mm thickness (110) wafer exhibits a highest ≈64.5% transmittance near 2400 nm wavelength and the bandgap E g is deduced as 2.223 eV. ZnTe crystal shows a heavy volatilization start from 910 °C and the weight losing speed is about ≈1.45% min −1 . The thermal conductivity k displays good repeatability in the cooling and heating stages, the k value is about 15.8 Wm −1 K −1 at room temperature and is deceased to 3.53 Wm −1 K −1 under 500 °C. These results would be of great reference when ZnTe crystal is used for device design and application in the future.

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Growth of large-diameter ZnTe single crystals by liquid-encapsulated melt growth methods

Cited by 8 publications

References 9 publications

Epitaxial characteristics of MBE-grown ZnTe thin films on GaAs (211)B substrates

Epitaxial characteristics of MBE-grown ZnTe thin films on GaAs (211)B substrates

Advanced Halide Scintillators: From the Bulk to Nano

Growth of ZnTe Semiconductor Crystal Via a Te Flux Zone Melting Method and Characterization of Its Properties

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