Phosphorus impurities in MgxZn1−xTe alloys

Abstract

P-doped Mg x Zn 1Ϫx Te alloys ͑0рxр0.28͒ are characterized using room-temperature electrical, optical, and photoelectric measurements. The electrical properties ͑hole concentration and mobility͒ indicate an increasing compensation with the increase of Mg content. The donor impurities are attributed to P. The optical absorption spectrum exhibits a peak situated at 1.06 eV, independent of composition. Supportive evidence is obtained for the assignment of this peak to electronic transitions in the shallow P acceptor level originating from the spin-orbit band. The perturbations in the local potential lead to a broadening of the absorption peak and to the appearance of density-of-states tails at the edges of the principal bands. The spectral response of indium surface barriers on undoped and P-doped crystals is investigated. It is found that P doping leads to a lowering of the barrier height and to a shift in the high-energy edge of the spectral response toward lower energies. The latter is attributed to the presence of a thin insulating interfacial layer and a high density of interface states in the P-doped contacts. It is suggested that P has a role in determining the characteristics of the interface.

Photocurrent Transients in Presence of a Double Impurity in Semi-Insulating Semiconductors

“…Deep levels in this material have already been studied using optical [19], luminescence [20] and PICTS (for the composition x 0:21) [6] measurements. Energy levels in the range 0.11 to 0.92 eV have been detected [6,19,20]. In the following , the results of PICTS measurements on the compositions x 0:10, 0.14 and 0.30 will be presented and analyzed.…”

Temperature dependence of electrical properties for P-doped ZnMgTe bulk crystals of high quality grown by Bridgman method

“…With respect to bulk growth of Zn 1 À x Mg x Te crystals, several investigations have so far been carried out mainly using the Bridgman technique [1,2,[4][5][6][7][8][9], which is simple and leads to low cost. However, there are only a few works on phosphorus (P)-doped Zn 1 À x Mg x Te bulk crystals [4,6] except for our previous studies [2,8,9].…”

“…However, there are only a few works on phosphorus (P)-doped Zn 1 À x Mg x Te bulk crystals [4,6] except for our previous studies [2,8,9]. The incorporation of P reduces the room-temperature (RT) resistivity of p-type crystals [2,4,6], and also enhances the bandedge emission in Zn 1 À x Mg x Te [9] as well as in ZnTe [10]. Using P-doped Zn 1 À x Mg x Te bulk crystals as substrates, we have already demonstrated a green ZnTe-based LED by means of thermal diffusion process of Al [11].…”

Morphology, electrical, and optical properties of heavily doped ZnTe:Cu thin films

“…[1][2][3][4] Its incorporation as part of hybrid systems such as, for example, HgZnTe, 5 MgZnTe, 6 and CdZnTe 7 widens its range of applications to include infrared detectors, blue LED's, and tandem solar cells, respectively. Moreover, the feasibility of photovoltaic devices using ZnTe homojunctions has recently been demonstrated.…”